π-MOSVII 系列, 单 FET,MOSFET

结果:
74
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
结果74
搜索条目:
π-MOSVII
选择
图片产品详情单价可用性ECAD 模型Mounting TypeFET TypeOperating TemperaturePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationSeries
TK16A55D(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
16A (Ta)
4V @ 1mA
550 V
-
330mOhm @ 8A, 10V
45 nC @ 10 V
-
2600 pF @ 25 V
-
-
π-MOSVII
TK4A65DA(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
3.5A (Ta)
4.4V @ 1mA
650 V
10V
1.9Ohm @ 1.8A, 10V
12 nC @ 10 V
±30V
600 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK4A55D(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
4A (Ta)
4.4V @ 1mA
550 V
10V
1.88Ohm @ 2A, 10V
11 nC @ 10 V
±30V
490 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK15A60D(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
15A (Ta)
4V @ 1mA
600 V
10V
370mOhm @ 7.5A, 10V
45 nC @ 10 V
±30V
2600 pF @ 25 V
50W (Tc)
-
π-MOSVII
TK11A60D(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
11A (Ta)
4V @ 1mA
600 V
10V
650mOhm @ 5.5A, 10V
28 nC @ 10 V
±30V
1550 pF @ 25 V
45W (Tc)
-
π-MOSVII
TK20A25D,S5Q(M
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
20A (Ta)
3.5V @ 1mA
250 V
10V
100mOhm @ 10A, 10V
55 nC @ 10 V
±20V
2550 pF @ 100 V
45W (Tc)
-
π-MOSVII
TK2P60D(TE16L1,NQ)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PW-MOLD
MOSFET (Metal Oxide)
-
2A (Ta)
4.4V @ 1mA
600 V
10V
4.3Ohm @ 1A, 10V
7 nC @ 10 V
±30V
280 pF @ 25 V
60W (Tc)
-
π-MOSVII
TK4A55DA(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
3.5A (Ta)
4.4V @ 1mA
550 V
10V
2.45Ohm @ 1.8A, 10V
9 nC @ 10 V
±30V
380 pF @ 25 V
30W (Tc)
-
π-MOSVII
TK4A53D(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
4A (Ta)
4.4V @ 1mA
525 V
10V
1.7Ohm @ 2A, 10V
11 nC @ 10 V
±30V
490 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK4A60DB(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
3.7A (Ta)
4.4V @ 1mA
600 V
10V
2Ohm @ 1.9A, 10V
11 nC @ 10 V
±30V
540 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK4P50D(T6RSS-Q)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK
MOSFET (Metal Oxide)
-
4A (Ta)
4.4V @ 1mA
500 V
10V
2Ohm @ 2A, 10V
9 nC @ 10 V
±30V
380 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK4P55DA(T6RSS-Q)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK
MOSFET (Metal Oxide)
-
3.5A (Ta)
4.4V @ 1mA
550 V
10V
2.45Ohm @ 1.8A, 10V
9 nC @ 10 V
±30V
380 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK4P55D(T6RSS-Q)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK
MOSFET (Metal Oxide)
-
4A (Ta)
4.4V @ 1mA
550 V
10V
1.88Ohm @ 2A, 10V
11 nC @ 10 V
±30V
490 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK4P60DB(T6RSS-Q)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK
MOSFET (Metal Oxide)
-
3.7A (Ta)
4.4V @ 1mA
600 V
10V
2Ohm @ 1.9A, 10V
11 nC @ 10 V
±30V
540 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK8A60DA(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
7.5A (Ta)
4V @ 1mA
600 V
10V
1Ohm @ 4A, 10V
20 nC @ 10 V
±30V
1050 pF @ 25 V
45W (Tc)
-
π-MOSVII
TK4P60DA(T6RSS-Q)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK
MOSFET (Metal Oxide)
-
3.5A (Ta)
4.4V @ 1mA
600 V
10V
2.2Ohm @ 1.8A, 10V
11 nC @ 10 V
±30V
490 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK3A60DA(Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
2.5A (Ta)
4.4V @ 1mA
600 V
10V
2.8Ohm @ 1.3A, 10V
9 nC @ 10 V
±30V
380 pF @ 25 V
30W (Tc)
-
π-MOSVII
TK7P50D(T6RSS-Q)
联系我们
20,400 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK
MOSFET (Metal Oxide)
-
7A (Ta)
4.4V @ 1mA
500 V
10V
1.22Ohm @ 3.5A, 10V
12 nC @ 10 V
±30V
600 pF @ 25 V
100W (Tc)
-
π-MOSVII
TK5A55D(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
5A (Ta)
4.4V @ 1mA
550 V
10V
1.7Ohm @ 2.5A, 10V
11 nC @ 10 V
±30V
540 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK7A45DA(STA4,Q,M)
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
-
TO-220SIS
MOSFET (Metal Oxide)
-
6.5A (Ta)
4.4V @ 1mA
450 V
10V
1.2Ohm @ 3.3A, 10V
11 nC @ 10 V
±30V
540 pF @ 25 V
35W (Tc)
-
π-MOSVII

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。