单 FET,MOSFET

结果:
46,157
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
结果46,157
选择
图片产品详情单价可用性ECAD 模型SeriesMounting TypeOperating TemperaturePackage / CaseFET TypeDrain to Source Voltage (Vdss)Supplier Device PackageGradeTechnologyFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
BSS138-TP
MOSFET N-CH 50V 220MA SOT23
联系我们
4,380,890 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
50 V
SOT-23
-
MOSFET (Metal Oxide)
-
3.5Ohm @ 220mA, 10V
1.5V @ 1mA
-
220mA (Tj)
4.5V, 10V
±20V
60 pF @ 25 V
350mW
-
FDN338P
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
845,095 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
20 V
SOT-23-3
MOSFET (Metal Oxide)
-
115mOhm @ 1.6A, 4.5V
1.5V @ 250µA
6.2 nC @ 4.5 V
1.6A (Ta)
2.5V, 4.5V
±8V
451 pF @ 10 V
500mW (Ta)
IRFR1205TRPBF
IRFR1205 - 12V-300V N-CHANNEL PO
联系我们
603,700 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
55 V
D-Pak
MOSFET (Metal Oxide)
-
27mOhm @ 26A, 10V
4V @ 250µA
65 nC @ 10 V
44A (Tc)
10V
±20V
1300 pF @ 25 V
107W (Tc)
NVTFS5826NLWFTAG
MOSFET N-CH 60V 7.6A 8WDFN
联系我们
555,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 175°C (TJ)
8-PowerWDFN
N-Channel
60 V
8-WDFN (3.3x3.3)
Automotive
MOSFET (Metal Oxide)
-
24mOhm @ 10A, 10V
2.5V @ 250µA
16 nC @ 10 V
7.6A (Ta)
4.5V, 10V
±20V
850 pF @ 25 V
3.2W (Ta), 22W (Tc)
AEC-Q101
BSS138
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
478,684 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
-
N-Channel
50 V
-
MOSFET (Metal Oxide)
-
-
-
-
220mA (Ta)
-
±20V
-
-
IPB048N06LG
N-CHANNEL POWER MOSFET
联系我们
390,888 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
60 V
PG-TO-263-3-2
MOSFET (Metal Oxide)
-
4.7mOhm @ 100A, 10V
2V @ 270µA
225 nC @ 10 V
100A (Tc)
4.5V, 10V
±20V
7600 pF @ 30 V
300W (Tc)
STD80N4F6
MOSFET N-CH 40V 80A DPAK
联系我们
380,080 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
DeepGATE™, STripFET™ VI
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
40 V
DPAK
Automotive
MOSFET (Metal Oxide)
-
6mOhm @ 40A, 10V
4V @ 250µA
36 nC @ 10 V
80A (Tc)
10V
±20V
2150 pF @ 25 V
70W (Tc)
AEC-Q101
IRF540NPBF
MOSFET N-CH 100V 33A TO220AB
联系我们
300,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
HEXFET®
Through Hole
-55°C ~ 175°C (TJ)
TO-220-3
N-Channel
100 V
TO-220AB
-
MOSFET (Metal Oxide)
-
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
33A (Tc)
10V
±20V
1960 pF @ 25 V
130W (Tc)
-
FDN360P
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
294,508 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
30 V
SOT-23-3
MOSFET (Metal Oxide)
-
80mOhm @ 2A, 10V
3V @ 250µA
9 nC @ 10 V
2A (Ta)
4.5V, 10V
±20V
298 pF @ 15 V
500mW (Ta)
FDV304P
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
275,206 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
25 V
SOT-23-3
MOSFET (Metal Oxide)
-
1.1Ohm @ 500mA, 4.5V
1.5V @ 250µA
1.5 nC @ 4.5 V
460mA (Ta)
2.7V, 4.5V
±8V
63 pF @ 10 V
350mW (Ta)
BSS138K
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
273,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
50 V
SOT-23-3
MOSFET (Metal Oxide)
-
1.6Ohm @ 50mA, 5V
1.2V @ 250µA
2.4 nC @ 10 V
220mA (Ta)
1.8V, 2.5V
±12V
58 pF @ 25 V
350mW (Ta)
BUK768R1-40E118
NOW NEXPERIA BUK768R1-100E - POW
联系我们
260,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
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FDPF18N20FT
POWER FIELD-EFFECT TRANSISTOR, 1
联系我们
251,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
N-Channel
200 V
TO-220F-3
MOSFET (Metal Oxide)
-
140mOhm @ 9A, 10V
5V @ 250µA
26 nC @ 10 V
18A (Tc)
10V
±30V
1180 pF @ 25 V
41W (Tc)
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
联系我们
234,768 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchMOS™
Surface Mount
-55°C ~ 150°C (TA)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
TO-236AB
Automotive
MOSFET (Metal Oxide)
-
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
360mA (Ta)
10V
±20V
50 pF @ 10 V
350mW (Ta), 1.14W (Tc)
AEC-Q101
DMP2035U-7
MOSFET P-CH 20V 3.6A SOT23-3
联系我们
213,380 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
20 V
SOT-23-3
-
MOSFET (Metal Oxide)
-
35mOhm @ 4A, 4.5V
1V @ 250µA
15.4 nC @ 4.5 V
3.6A (Ta)
1.8V, 4.5V
±8V
1610 pF @ 10 V
810mW (Ta)
-
BSS123
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
200,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
100 V
SOT-23-3
MOSFET (Metal Oxide)
-
6Ohm @ 170mA, 10V
2V @ 1mA
2.5 nC @ 10 V
170mA (Ta)
4.5V, 10V
±20V
73 pF @ 25 V
360mW (Ta)
IRFB4227PBF
MOSFET N-CH 200V 65A TO220AB
联系我们
198,052 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
HEXFET®
Through Hole
-40°C ~ 175°C (TJ)
TO-220-3
N-Channel
200 V
TO-220AB
-
MOSFET (Metal Oxide)
-
24mOhm @ 46A, 10V
5V @ 250µA
98 nC @ 10 V
65A (Tc)
10V
±30V
4600 pF @ 25 V
330W (Tc)
-
MGSF1N02LT1G
MOSFET N-CH 20V 750MA SOT23-3
联系我们
187,980 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
20 V
SOT-23-3 (TO-236)
-
MOSFET (Metal Oxide)
-
90mOhm @ 1.2A, 10V
2.4V @ 250µA
-
750mA (Ta)
4.5V, 10V
±20V
125 pF @ 5 V
400mW (Ta)
-
IRFH3707TRPBF
IRFH3707 - 12V-300V N-CHANNEL PO
联系我们
187,512 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
30 V
8-PQFN (3x3)
MOSFET (Metal Oxide)
-
12.4mOhm @ 12A, 10V
2.35V @ 25µA
8.1 nC @ 4.5 V
12A (Ta), 29A (Tc)
4.5V, 10V
±20V
755 pF @ 15 V
2.8W (Ta)
2N7002CK
2N7002 - SMALL SIGNAL FIELD-EFFE
联系我们
181,251 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
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关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。