FET,MOSFET 阵列

结果:
6,288
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power - Max
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Configuration
Operating Temperature
FET Type
FET Feature
Power Dissipation (Max)
Drive Voltage (Max Rds On, Min Rds On)
Technology
Vgs (Max)
Mounting Type
Qualification
Voltage - Supply
Logic Voltage - VIL, VIH
Rise / Fall Time (Typ)
Channel Type
Driven Configuration
Grade
Current - Peak Output (Source, Sink)
Input Type
Number of Drivers
Voltage - Rated
Gate Type
High Side Voltage - Max (Bootstrap)
Gain
Current Rating (Amps)
Noise Figure
Number of Outputs
Voltage - Test
Voltage - Supply Span (Max)
Program Memory Type
Gain Bandwidth Product
Current - Input Bias
EEPROM Size
Voltage - Input (Min)
Amplifier Type
Voltage - Isolation
Current - Test
Topology
Current - Supply
Oscillator Type
Voltage - Supply Span (Min)
Core Size
Connectivity
Program Memory Size
Data Converters
Current
Current - Output / Channel
Core Processor
Output Type
Voltage - Input (Max)
Current - Output
Output Configuration
Power - Output
Function
Frequency - Switching
Voltage
Voltage - Output
Voltage - Output (Min/Fixed)
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Speed
Synchronous Rectifier
Applications
RAM Size
-3db Bandwidth
Number of I/O
Slew Rate
Peripherals
Voltage - Output (Max)
Voltage - Input Offset
Type
Frequency
Number of Circuits
结果6,288
选择
图片产品详情单价可用性ECAD 模型SeriesMounting TypePackage / CaseOperating TemperatureInput Capacitance (Ciss) (Max) @ VdsGradePower - MaxTechnologyFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsSupplier Device PackageQualificationConfiguration
EMH2418R-TL-H
MOSFET 2N-CH 24V 9A EMH8
联系我们
670,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
8-SMD, Flat Lead
150°C (TJ)
-
-
1.3W
MOSFET (Metal Oxide)
Logic Level Gate, 2.5V Drive
24V
9A
15mOhm @ 4A, 4.5V
1.3V @ 1mA
4.4nC @ 4.5V
SOT-383FL, EMH8
-
2 N-Channel (Dual) Common Drain
DMN601DWK-7
MOSFET 2N-CH 60V 0.305A SOT-363
联系我们
510,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
-65°C ~ 150°C (TJ)
50pF @ 25V
-
200mW
MOSFET (Metal Oxide)
Logic Level Gate
60V
305mA
2Ohm @ 500mA, 10V
2.5V @ 1mA
-
SOT-363
-
2 N-Channel (Dual)
AO7800
联系我们
510,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
120pF @ 10V
-
300mW
MOSFET (Metal Oxide)
Logic Level Gate
20V
900mA
300mOhm @ 900mA, 4.5V
900mV @ 250µA
1.9nC @ 4.5V
SC-70-6
-
2 N-Channel (Dual)
DMP58D0SV-7
MOSFET 2P-CH 50V 0.16A SOT-563
联系我们
427,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
SOT-563, SOT-666
-55°C ~ 150°C (TJ)
27pF @ 25V
-
400mW
MOSFET (Metal Oxide)
Logic Level Gate
50V
160mA
8Ohm @ 100mA, 5V
2.1V @ 250µA
-
SOT-563
-
2 P-Channel (Dual)
BSS8402DWQ-7
MOSFET N/P-CH 60V/50V
联系我们
405,869 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
50pF @ 25V, 45pF @ 25V
-
200mW
MOSFET (Metal Oxide)
Logic Level Gate
60V, 50V
115mA, 130mA
13.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
SOT-363
-
N and P-Channel
DMG1016UDW-7
MOSFET N/P-CH 20V SOT363
联系我们
375,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
60.67pF @ 10V
-
330mW
MOSFET (Metal Oxide)
Logic Level Gate
20V
1.07A, 845mA
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
SOT-363
-
N and P-Channel
DMN61D9UDW-7
MOSFET 2N-CH 60V 0.35A
联系我们
343,295 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
28.5pF @ 30V
-
320mW
MOSFET (Metal Oxide)
-
60V
350mA
2Ohm @ 50mA, 5V
1V @ 250µA
0.4nC @ 4.5V
SOT-363
-
2 N-Channel (Dual)
SI1988DH-T1-E3
MOSFET 2N-CH 20V 1.3A SC70-6
联系我们
323,200 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
110pF @ 10V
-
1.25W
MOSFET (Metal Oxide)
Logic Level Gate
20V
1.3A
168mOhm @ 1.4A, 4.5V
1V @ 250µA
4.1nC @ 8V
SC-70-6
-
2 N-Channel (Dual)
SI3900DV-T1-E3
MOSFET 2N-CH 20V 2A 6-TSOP
联系我们
304,500 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
SOT-23-6 Thin, TSOT-23-6
-55°C ~ 150°C (TJ)
-
-
830mW
MOSFET (Metal Oxide)
Logic Level Gate
20V
2A
125mOhm @ 2.4A, 4.5V
1.5V @ 250µA
4nC @ 4.5V
6-TSOP
-
2 N-Channel (Dual)
NTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SOT-363
联系我们
289,606 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
33pF @ 5V
-
272mW
MOSFET (Metal Oxide)
-
30V
250mA
1.5Ohm @ 10mA, 4V
1.5V @ 100µA
1.3nC @ 5V
SC-88/SC70-6/SOT-363
-
2 N-Channel (Dual)
SI7214DN-T1-E3
MOSFET 2N-CH 30V 4.6A 1212-8
联系我们
282,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
PowerPAK® 1212-8 Dual
-55°C ~ 150°C (TJ)
-
-
1.3W
MOSFET (Metal Oxide)
Logic Level Gate
30V
4.6A
40mOhm @ 6.4A, 10V
3V @ 250µA
6.5nC @ 4.5V
PowerPAK® 1212-8 Dual
-
2 N-Channel (Dual)
DMN62D0UDWQ-7
MOSFET BVDSS: 41V~60V SOT363 T&R
联系我们
280,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
32pF @ 30V
Automotive
320mW (Ta)
MOSFET (Metal Oxide)
-
60V
350mA (Ta)
2Ohm @ 100mA, 4.5V
1.1V @ 250µA
0.5nC @ 4.5V
SOT-363
AEC-Q101
2 N-Channel (Dual)
NX3008CBKS,115
MOSFET N/P-CH 30V 6TSSOP
联系我们
275,243 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchMOS™
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
50pF @ 15V
Automotive
445mW
MOSFET (Metal Oxide)
Logic Level Gate
30V
350mA, 200mA
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
6-TSSOP
AEC-Q101
N and P-Channel
SSM6N7002KFU,LF
联系我们
265,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
150°C (TJ)
40pF @ 10V
-
285mW
MOSFET (Metal Oxide)
-
60V
300mA
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6nC @ 4.5V
US6
-
2 N-Channel (Dual)
UM6J1NTN
MOSFET 2P-CH 30V 0.2A UMT6
联系我们
256,507 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
150°C (TJ)
30pF @ 10V
-
150mW
MOSFET (Metal Oxide)
Logic Level Gate
30V
200mA
1.4Ohm @ 200mA, 10V
2.5V @ 1mA
-
UMT6
-
2 P-Channel (Dual)
AO4807
MOSFET 2P-CH 30V 6A 8-SOIC
联系我们
250,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
-55°C ~ 150°C (TJ)
760pF @ 15V
-
2W
MOSFET (Metal Oxide)
Logic Level Gate
30V
6A
35mOhm @ 6A, 10V
2.4V @ 250µA
16nC @ 10V
8-SOIC
-
2 P-Channel (Dual)
DMG1029SV-7
MOSFET N/P-CH 60V SOT563
联系我们
248,243 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
SOT-563, SOT-666
-55°C ~ 150°C (TJ)
30pF @ 25V, 25pF @ 25V
-
450mW
MOSFET (Metal Oxide)
Logic Level Gate
60V
500mA, 360mA
1.7Ohm @ 500mA, 10V
2.5V @ 250µA
0.3nC @ 4.5V
SOT-563
-
N and P-Channel
SI5504BDC-T1-E3
MOSFET N/P-CH 30V 4A 1206-8
联系我们
246,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
8-SMD, Flat Lead
-55°C ~ 150°C (TJ)
220pF @ 15V
-
3.12W, 3.1W
MOSFET (Metal Oxide)
Logic Level Gate
30V
4A, 3.7A
65mOhm @ 3.1A, 10V
3V @ 250µA
7nC @ 10V
1206-8 ChipFET™
-
N and P-Channel
SI5935CDC-T1-GE3
MOSFET 2P-CH 20V 4A 1206-8
联系我们
238,626 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
8-SMD, Flat Lead
-55°C ~ 150°C (TJ)
455pF @ 10V
-
3.1W
MOSFET (Metal Oxide)
-
20V
4A
100mOhm @ 3.1A, 4.5V
1V @ 250µA
11nC @ 5V
1206-8 ChipFET™
-
2 P-Channel (Dual)
DMN63D8LDWQ-7
MOSFET 2N-CH 30V 0.22A SOT363
联系我们
237,853 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
6-TSSOP, SC-88, SOT-363
-55°C ~ 150°C (TJ)
22pF @ 25V
Automotive
300mW
MOSFET (Metal Oxide)
-
30V
220mA
2.8Ohm @ 250mA, 10V
1.5V @ 250µA
0.87nC @ 10V
SOT-363
AEC-Q101
2 N-Channel (Dual)

关于  FET,MOSFET 阵列

场效应晶体管(FET)是利用电场调节电流流动的电子器件。通过对栅极施加电压,可以改变漏极和源极之间的电导率。与双极晶体管不同,FET是单极性晶体管,意味着它们依赖于一种类型的载流子来进行操作。这可以是电子或空穴,但不能同时存在。 FET的一个关键优势是其在低频下具有很高的输入阻抗。这个特性源于FET的栅极端子不会吸引任何电流,因为它被设计成以电压驱动模式工作。因此,与类似配置的双极晶体管相比,FET的输入阻抗可以高出几个数量级。 场效应晶体管有多种类型,最常见的是结型场效应晶体管(JFET)和金属氧化物半导体场效应晶体管(MOSFET)。JFET利用反向偏置的pn结来控制电流流动,而MOSFET使用氧化层来隔离栅极和通道区域。 FET在电子领域有许多应用,包括放大器、开关、振荡器和电压稳压器。由于其具有高输入阻抗,FET经常用于低功耗电路中,其中低负载效应和信号质量是关键考虑因素。 总而言之,场效应晶体管(FET)是利用电场控制电流流动的电子器件。它们是单极性晶体管,依靠一种类型的载流子进行操作。FET在低频下具有高输入阻抗,非常适合在低功耗应用中使用,其中信号质量是关键因素。