EF 系列, 单 FET,MOSFET

结果:
65
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果65
搜索条目:
EF
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypePackage / CaseSeriesGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SIHG186N60EF-GE3
MOSFET N-CH 600V 8.4A TO247AC
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
8.4A (Tc)
10V
193mOhm @ 9.5A, 10V
32 nC @ 10 V
±30V
1081 pF @ 100 V
156W (Tc)
-
SIHP15N80AEF-GE3
EF SERIES POWER MOSFET WITH FAST
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
EF
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
13A (Tc)
10V
350mOhm @ 6.5A, 10V
54 nC @ 10 V
±30V
1128 pF @ 100 V
156W (Tc)
-
SIHG17N80AEF-GE3
E SERIES POWER MOSFET WITH FAST
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
15A (Tc)
10V
305mOhm @ 8.5A, 10V
63 nC @ 10 V
±30V
1300 pF @ 100 V
179W (Tc)
-
SIHG039N60EF-GE3
MOSFET N-CH 600V 61A TO247AC
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
61A (Tc)
10V
40mOhm @ 32A, 10V
126 nC @ 10 V
±30V
4323 pF @ 100 V
357W (Tc)
-
SIHA186N60EF-GE3
MOSFET N-CH 600V 8.4A TO220
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
EF
-
TO-220 Full Pack
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
8.4A (Tc)
10V
193mOhm @ 9.5A, 10V
32 nC @ 10 V
±30V
1081 pF @ 100 V
156W (Tc)
-
SIHG21N80AEF-GE3
E SERIES POWER MOSFET WITH FAST
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
16.3A (Tc)
10V
250mOhm @ 8.5A, 10V
71 nC @ 10 V
±30V
1511 pF @ 100 V
179W (Tc)
-
SIHB125N60EF-GE3
MOSFET N-CH 600V 25A D2PAK
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
EF
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
25A (Tc)
10V
125mOhm @ 12A, 10V
47 nC @ 10 V
±30V
1533 pF @ 100 V
179W (Tc)
-
SIHA125N60EF-GE3
MOSFET N-CH 600V 11A TO220
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
EF
-
TO-220 Full Pack
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
11A (Tc)
10V
125mOhm @ 12A, 10V
47 nC @ 10 V
±30V
1533 pF @ 100 V
179W (Tc)
-
SIHA105N60EF-GE3
MOSFET N-CH 600V 12A TO220
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
EF
-
TO-220 Full Pack
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
12A (Tc)
10V
102mOhm @ 13A, 10V
53 nC @ 10 V
±30V
1804 pF @ 100 V
35W (Tc)
-
SIHG105N60EF-GE3
MOSFET N-CH 600V 29A TO247AC
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
29A (Tc)
10V
102mOhm @ 13A, 10V
53 nC @ 10 V
±30V
1804 pF @ 100 V
208W (Tc)
-
SIHB22N60EF-GE3
MOSFET N-CH 600V 19A D2PAK
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
EF
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
19A (Tc)
10V
182mOhm @ 11A, 10V
96 nC @ 10 V
±30V
1423 pF @ 100 V
179W (Tc)
-
SIHG35N60EF-GE3
MOSFET N-CH 600V 32A TO247AC
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
32A (Tc)
10V
97mOhm @ 17A, 10V
134 nC @ 10 V
±30V
2568 pF @ 100 V
250W (Tc)
-
SIHP21N60EF-BE3
MOSFET N-CH 600V 21A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
EF
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
21A (Tc)
10V
176mOhm @ 11A, 10V
84 nC @ 10 V
±30V
2030 pF @ 100 V
227W (Tc)
-
SIHP22N60EF-GE3
MOSFET N-CH 600V 19A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
EF
-
TO-220 Full Pack
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
19A (Tc)
10V
182mOhm @ 11A, 10V
96 nC @ 10 V
±30V
1423 pF @ 100 V
179W (Tc)
-
SIHP068N60EF-GE3
MOSFET N-CH 600V 41A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
EF
-
TO-220AB
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
41A (Tc)
10V
68mOhm @ 16A, 10V
77 nC @ 10 V
±30V
2628 pF @ 100 V
250W (Tc)
-
SIHG47N60AEF-GE3
MOSFET N-CH 600V 40A TO247AC
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217 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
40A (Tc)
10V
70mOhm @ 23.5A, 10V
189 nC @ 10 V
±30V
3576 pF @ 100 V
313W (Tc)
-
SIHB35N60EF-GE3
MOSFET N-CH 600V 32A D2PAK
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
EF
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
32A (Tc)
10V
97mOhm @ 17A, 10V
134 nC @ 10 V
±30V
2568 pF @ 100 V
250W (Tc)
-
SIHG125N60EF-GE3
MOSFET N-CH 600V 25A TO247AC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
25A (Tc)
10V
125mOhm @ 12A, 10V
47 nC @ 10 V
±30V
1533 pF @ 100 V
179W (Tc)
-
SIHB068N60EF-GE3
MOSFET N-CH 600V 41A D2PAK
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
EF
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
41A (Tc)
10V
68mOhm @ 16A, 10V
77 nC @ 10 V
±30V
2628 pF @ 100 V
250W (Tc)
-
SIHG068N60EF-GE3
MOSFET N-CH 600V 41A TO247AC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
EF
-
TO-247AC
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
41A (Tc)
10V
68mOhm @ 16A, 10V
77 nC @ 10 V
±30V
2628 pF @ 100 V
250W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。