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UniFET-II™ Series, 单 FET，MOSFET
结果:
32
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Vgs(th) (Max) @ Id
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果：32
搜索条目:
UniFET-II™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Supplier Device Package | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 80,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 6.5A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 1.2Ohm @ 4A, 10V | 18 nC @ 10 V | ±25V | 735 pF @ 25 V | 40W (Tc) | - | ||
 | 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 80,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 6.5A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 1.2Ohm @ 4A, 10V | 18 nC @ 10 V | ±25V | 735 pF @ 25 V | 40W (Tc) | - | ||
 | 1+ ¥3.6000 5+ ¥3.4000 10+ ¥3.2000 更多的价格 | 67,109 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | - | MOSFET (Metal Oxide) | - | 4A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 2Ohm @ 2A, 10V | 13 nC @ 10 V | ±25V | 600 pF @ 25 V | 83W (Tc) | - | ||
| 1+ ¥5.4000 5+ ¥5.1000 10+ ¥4.8000 更多的价格 | 28,508 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | - | MOSFET (Metal Oxide) | - | 2.5A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 2.5Ohm @ 1.25A, 10V | 8 nC @ 10 V | ±25V | 280 pF @ 25 V | 40W (Tc) | - | ||
 | 1+ ¥3.6000 5+ ¥3.4000 10+ ¥3.2000 更多的价格 | 19,059 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | - | MOSFET (Metal Oxide) | - | 5.5A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 1.25Ohm @ 2.75A, 10V | 17 nC @ 10 V | ±25V | 730 pF @ 25 V | 90W (Tc) | - | ||
| 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 8,800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 12A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 650mOhm @ 6A, 10V | 34 nC @ 10 V | ±30V | 1676 pF @ 25 V | 39W (Tc) | - | ||
 | 1+ ¥7.2000 5+ ¥6.8000 10+ ¥6.4000 更多的价格 | 1,053 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220-3 | - | MOSFET (Metal Oxide) | - | 12A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 650mOhm @ 6A, 10V | 34 nC @ 10 V | ±30V | 1676 pF @ 25 V | 240W (Tc) | - | ||
| 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 1,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220-3 | - | MOSFET (Metal Oxide) | - | 11.5A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 520mOhm @ 5.75A, 10V | 30 nC @ 10 V | ±25V | 1235 pF @ 25 V | 170W (Tc) | - | ||
 | 1+ ¥3.6000 5+ ¥3.4000 10+ ¥3.2000 更多的价格 | 570 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220-3 | - | MOSFET (Metal Oxide) | - | 4.5A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 2Ohm @ 2.25A, 10V | 13 nC @ 10 V | ±25V | 600 pF @ 25 V | 100W (Tc) | - | ||
| 1+ ¥5.4000 5+ ¥5.1000 10+ ¥4.8000 更多的价格 | 452 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220-3 | - | MOSFET (Metal Oxide) | - | 6.5A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 1.25Ohm @ 3.25A, 10V | 17 nC @ 10 V | ±30V | 730 pF @ 25 V | 147W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 6.5A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 1.25Ohm @ 3.25A, 10V | 17 nC @ 10 V | ±30V | 730 pF @ 25 V | 33W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 4.2A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 1.75Ohm @ 2.1A, 10V | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | 30W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | - | MOSFET (Metal Oxide) | - | 3.7A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 1.75Ohm @ 1.85A, 10V | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | 62.5W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 3.9A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 2Ohm @ 1.95A, 10V | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | 30W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | - | MOSFET (Metal Oxide) | - | 3.4A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 2.5Ohm @ 1.7A, 10V | 10.8 nC @ 10 V | ±25V | 510 pF @ 25 V | 114W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | - | MOSFET (Metal Oxide) | - | 6.5A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 850mOhm @ 3.25A, 10V | 18 nC @ 10 V | ±25V | 735 pF @ 25 V | 90W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 11.5A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 520mOhm @ 5.75A, 10V | 30 nC @ 400 V | ±25V | 1235 pF @ 25 V | 42W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220-3 | - | MOSFET (Metal Oxide) | - | 10A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 750mOhm @ 5A, 10V | 30 nC @ 10 V | ±25V | 1475 pF @ 25 V | 185W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 3A (Tc) | 5V @ 250µA | UniFET-II™ | 500 V | 10V | 2.5Ohm @ 1.5A, 10V | 9 nC @ 10 V | ±25V | 280 pF @ 25 V | 27W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220F-3 | - | MOSFET (Metal Oxide) | - | 6.5A (Tc) | 5V @ 250µA | UniFET-II™ | 600 V | 10V | 1.25Ohm @ 3.25A, 10V | 17 nC @ 10 V | ±30V | 730 pF @ 25 V | 33W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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