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Ultra X2 Series, 单 FET，MOSFET
结果:
49
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
结果：49
搜索条目:
Ultra X2
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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.jpg "IXTH80N65X2") | 1+ $81.0000 5+ $76.5000 10+ $72.0000 更多的价格 | 3,010 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | 650 V | - | MOSFET (Metal Oxide) | - | 80A (Tc) | Ultra X2 | 10V | 40mOhm @ 40A, 10V | 4.5V @ 4mA | 144 nC @ 10 V | ±30V | 7753 pF @ 25 V | 890W (Tc) | - | ||
 | 1+ $11.7000 5+ $11.0500 10+ $10.4000 更多的价格 | 2,100 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 650 V | - | MOSFET (Metal Oxide) | - | 4A (Tc) | Ultra X2 | 10V | 850mOhm @ 2A, 10V | 5V @ 250µA | 8.3 nC @ 10 V | ±30V | 455 pF @ 25 V | 80W (Tc) | - | ||
| 1+ $72.0000 5+ $68.0000 10+ $64.0000 更多的价格 | 1,773 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | 650 V | - | MOSFET (Metal Oxide) | - | 48A (Tc) | Ultra X2 | 10V | 68mOhm @ 24A, 10V | 4.5V @ 4mA | 77 nC @ 10 V | ±30V | 4420 pF @ 25 V | 660W (Tc) | - | ||
 | 1+ $25.2000 5+ $23.8000 10+ $22.4000 更多的价格 | 850 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | 650 V | - | MOSFET (Metal Oxide) | - | 24A (Tc) | Ultra X2 | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 2060 pF @ 25 V | 390W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220 | 650 V | - | MOSFET (Metal Oxide) | - | 4A (Tc) | Ultra X2 | 10V | 850mOhm @ 2A, 10V | 5V @ 250µA | 8.3 nC @ 10 V | ±30V | 455 pF @ 25 V | 80W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220 | 650 V | - | MOSFET (Metal Oxide) | - | 4A (Tc) | Ultra X2 | 10V | 550mOhm @ 4A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 25 V | 32W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack, Isolated Tab | TO-220 Isolated Tab | 650 V | - | MOSFET (Metal Oxide) | - | 24A (Tc) | Ultra X2 | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 2060 pF @ 25 V | 37W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | 650 V | - | MOSFET (Metal Oxide) | - | 20A (Tc) | Ultra X2 | 10V | 185mOhm @ 10A, 10V | 4.5V @ 250µA | 27 nC @ 10 V | ±30V | 1450 pF @ 25 V | 290W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220 | 650 V | - | MOSFET (Metal Oxide) | - | 20A (Tc) | Ultra X2 | 10V | 185mOhm @ 10A, 10V | 4.5V @ 250µA | 27 nC @ 10 V | ±30V | 1450 pF @ 25 V | 290W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | 650 V | - | MOSFET (Metal Oxide) | - | 34A (Tc) | Ultra X2 | 10V | 105mOhm @ 17A, 10V | 4.5V @ 4mA | 53 nC @ 10 V | ±30V | 3120 pF @ 25 V | 540W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220-3 | 650 V | - | MOSFET (Metal Oxide) | - | 34A (Tc) | Ultra X2 | 10V | 96mOhm @ 17A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 3000 pF @ 25 V | 540W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 600 V | - | MOSFET (Metal Oxide) | - | 14A (Tc) | Ultra X2 | 10V | 250mOhm @ 7A, 10V | 4.5V @ 250µA | 16.7 nC @ 10 V | ±30V | 740 pF @ 25 V | 180W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268HV (IXTT) | 650 V | - | MOSFET (Metal Oxide) | - | 34A (Tc) | Ultra X2 | 10V | 96mOhm @ 17A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 3000 pF @ 25 V | 540W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 650 V | - | MOSFET (Metal Oxide) | - | 34A (Tc) | Ultra X2 | 10V | 96mOhm @ 17A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 3000 pF @ 25 V | 540W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 650 V | - | MOSFET (Metal Oxide) | - | 20A (Tc) | Ultra X2 | 10V | 185mOhm @ 10A, 10V | 4.5V @ 250µA | 27 nC @ 10 V | ±30V | 1450 pF @ 25 V | 290W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 700 V | - | MOSFET (Metal Oxide) | - | 4A (Tc) | Ultra X2 | 10V | 850mOhm @ 2A, 10V | 4.5V @ 250µA | 11.8 nC @ 10 V | ±30V | 386 pF @ 25 V | 80W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 650 V | - | MOSFET (Metal Oxide) | - | 8A (Tc) | Ultra X2 | 10V | 500mOhm @ 4A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 25 V | 150W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack, Isolated Tab | TO-220 Isolated Tab | 650 V | - | MOSFET (Metal Oxide) | - | 12A (Tc) | Ultra X2 | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 17.7 nC @ 10 V | ±30V | 1100 pF @ 25 V | 40W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220 | 650 V | - | MOSFET (Metal Oxide) | - | 8A (Tc) | Ultra X2 | 10V | 500mOhm @ 4A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 25 V | 150W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | ISOPLUS247™ | 650 V | - | MOSFET (Metal Oxide) | - | 54A (Tc) | Ultra X2 | 10V | 33mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | 330W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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