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U-MOSVI Series, 单 FET，MOSFET
结果:
113
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
结果：113
搜索条目:
U-MOSVI
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Package / Case | FET Type | Operating Temperature | Drain to Source Voltage (Vdss) | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Series | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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.jpg "SSM6J501NU,LF") | 1+ $0.8100 5+ $0.7650 10+ $0.7200 更多的价格 | 300,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 6-WDFN Exposed Pad | P-Channel | 150°C (TJ) | 20 V | - | MOSFET (Metal Oxide) | - | 10A (Ta) | 1V @ 1mA | 6-UDFNB (2x2) | U-MOSVI | 1.5V, 4.5V | 15.3mOhm @ 4A, 4.5V | 29.9 nC @ 4.5 V | ±8V | 2600 pF @ 10 V | 1W (Ta) | - | ||
 | 1+ $0.9540 5+ $0.9010 10+ $0.8480 更多的价格 | 289,552 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | SOT-23-3 Flat Leads | P-Channel | 150°C | 30 V | - | MOSFET (Metal Oxide) | - | 6A (Ta) | 1.2V @ 1mA | SOT-23F | U-MOSVI | 1.8V, 10V | 42mOhm @ 5A, 10V | 8.2 nC @ 4.5 V | +12V, -6V | 560 pF @ 15 V | 1W (Ta) | - | ||
| 1+ $2.7000 5+ $2.5500 10+ $2.4000 更多的价格 | 63,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | SOT-23-3 Flat Leads | P-Channel | 150°C (TJ) | 20 V | - | MOSFET (Metal Oxide) | - | 3.9A (Ta) | 1V @ 1mA | SOT-23F | U-MOSVI | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 4.6 nC @ 4.5 V | ±8V | 290 pF @ 10 V | 1W (Ta) | - | ||
 | 1+ $1.3500 5+ $1.2750 10+ $1.2000 更多的价格 | 57,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-236-3, SC-59, SOT-23-3 | P-Channel | 150°C (TJ) | 20 V | - | MOSFET (Metal Oxide) | - | 2A (Ta) | - | S-Mini | U-MOSVI | 1.5V, 4.5V | 150mOhm @ 1A, 4.5V | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | 600mW (Ta) | - | ||
| 1+ $0.2880 5+ $0.2720 10+ $0.2560 更多的价格 | 36,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | SOT-23-3 Flat Leads | P-Channel | 150°C (TJ) | 20 V | - | MOSFET (Metal Oxide) | - | 6A (Ta) | 1V @ 1mA | SOT-23F | U-MOSVI | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 12.8 nC @ 4.5 V | ±8V | 840 pF @ 10 V | 1W (Ta) | - | ||
 | 1+ $9.0000 5+ $8.5000 10+ $8.0000 更多的价格 | 33,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | SOT-23-3 Flat Leads | P-Channel | 150°C | 60 V | Automotive | MOSFET (Metal Oxide) | - | 3.5A (Ta) | 2V @ 1mA | SOT-23F | U-MOSVI | 4V, 10V | 134mOhm @ 1A, 10V | 15.1 nC @ 10 V | +10V, -20V | 660 pF @ 10 V | 1W (Ta) | AEC-Q101 | ||
| 1+ $0.9900 5+ $0.9350 10+ $0.8800 更多的价格 | 24,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 6-WDFN Exposed Pad | P-Channel | 150°C (TJ) | 20 V | - | MOSFET (Metal Oxide) | - | 6A (Ta) | 1V @ 1mA | 6-UDFNB (2x2) | U-MOSVI | 1.5V, 4.5V | 32.4mOhm @ 3A, 4.5V | 12.8 nC @ 10 V | ±8V | 840 pF @ 10 V | 1W (Ta) | - | ||
| 1+ $0.1980 5+ $0.1870 10+ $0.1760 更多的价格 | 12,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | SOT-23-3 Flat Leads | P-Channel | 150°C (TJ) | 30 V | - | MOSFET (Metal Oxide) | - | 6A (Ta) | 1.2V @ 1mA | SOT-23F | U-MOSVI | 1.8V, 10V | 42mOhm @ 5A, 10V | 8.2 nC @ 4.5 V | ±12V | 560 pF @ 15 V | 1W (Ta) | - | ||
 | 1+ $7.5600 5+ $7.1400 10+ $6.7200 更多的价格 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-Channel | 175°C | 60 V | - | MOSFET (Metal Oxide) | - | 30A (Ta) | 3V @ 1mA | DPAK+ | U-MOSVI | 6V, 10V | 21.8mOhm @ 15A, 10V | 80 nC @ 10 V | +10V, -20V | 3950 pF @ 10 V | 68W (Tc) | - | ||
| 1+ $7.2000 5+ $6.8000 10+ $6.4000 更多的价格 | 8,800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-Channel | 175°C | 40 V | - | MOSFET (Metal Oxide) | - | 40A (Ta) | 3V @ 1mA | DPAK+ | U-MOSVI | 6V, 10V | 9.1mOhm @ 20A, 10V | 83 nC @ 10 V | +10V, -20V | 4140 pF @ 10 V | 68W (Tc) | - | ||
 | 1+ $0.6300 5+ $0.5950 10+ $0.5600 更多的价格 | 8,009 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | SOT-723 | P-Channel | 150°C (TJ) | 20 V | - | MOSFET (Metal Oxide) | - | 800mA (Ta) | - | VESM | U-MOSVI | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | - | ±8V | 100 pF @ 10 V | 150mW (Ta) | - | ||
 | 1+ $1.4400 5+ $1.3600 10+ $1.2800 更多的价格 | 6,100 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 3-SMD, Flat Leads | P-Channel | 150°C | 20 V | - | MOSFET (Metal Oxide) | - | 3.2A (Ta) | 1V @ 1mA | UFM | U-MOSVI | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | 500mW (Ta) | - | ||
 | 1+ $2.7000 5+ $2.5500 10+ $2.4000 更多的价格 | 4,270 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-Channel | 150°C (TJ) | 40 V | - | MOSFET (Metal Oxide) | - | 5A (Ta) | 2V @ 100µA | 8-SOP | U-MOSVI | 4.5V, 10V | 52mOhm @ 2.5A, 10V | 20 nC @ 10 V | +20V, -25V | 890 pF @ 10 V | 1W (Ta) | - | ||
| 1+ $0.4500 5+ $0.4250 10+ $0.4000 更多的价格 | 3,150 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | SOT-23-3 Flat Leads | P-Channel | 150°C (TJ) | 30 V | - | MOSFET (Metal Oxide) | - | 4A (Ta) | 2V @ 100µA | SOT-23F | U-MOSVI | 4V, 10V | 71mOhm @ 3A, 10V | 5.9 nC @ 10 V | ±20V | 280 pF @ 15 V | 1W (Ta) | - | ||
| 1+ $1.4400 5+ $1.3600 10+ $1.2800 更多的价格 | 2,158 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 3-SMD, Flat Leads | P-Channel | 150°C (TJ) | 20 V | - | MOSFET (Metal Oxide) | - | 5.5A (Ta) | 1V @ 1mA | UFM | U-MOSVI | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 12.8 nC @ 4.5 V | ±8V | 840 pF @ 10 V | 500mW (Ta) | - | ||
| 1+ $3.0600 5+ $2.8900 10+ $2.7200 更多的价格 | 2,080 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-Channel | 150°C (TJ) | 40 V | - | MOSFET (Metal Oxide) | - | 7A (Ta) | 2V @ 200µA | 8-SOP | U-MOSVI | 4.5V, 10V | 25mOhm @ 3.5A, 10V | 34 nC @ 10 V | +20V, -25V | 1580 pF @ 10 V | 1W (Ta) | - | ||
| 1+ $180.0000 5+ $170.0000 10+ $160.0000 更多的价格 | 2,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-Channel | 175°C (TJ) | 60 V | - | MOSFET (Metal Oxide) | - | 8A (Ta) | 3V @ 1mA | DPAK+ | U-MOSVI | 6V, 10V | 104mOhm @ 4A, 10V | 19 nC @ 10 V | +10V, -20V | 890 pF @ 10 V | 27W (Tc) | - | ||
 | 1+ $0.9000 5+ $0.8500 10+ $0.8000 更多的价格 | 1,375 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 6-SMD, Flat Leads | P-Channel | 150°C (TJ) | 20 V | - | MOSFET (Metal Oxide) | - | 6A (Ta) | 1V @ 1mA | UF6 | U-MOSVI | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 23.1 nC @ 4.5 V | ±8V | 1650 pF @ 10 V | 1W (Ta) | - | ||
| 1+ $8.1000 5+ $7.6500 10+ $7.2000 更多的价格 | 928 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-Channel | 150°C (TJ) | 30 V | - | MOSFET (Metal Oxide) | - | 10A (Ta) | 2V @ 500µA | 8-SOP | U-MOSVI | 4.5V, 10V | 13mOhm @ 5A, 10V | 64 nC @ 10 V | +20V, -25V | 2580 pF @ 10 V | 1W (Ta) | - | ||
| 1+ $216.0000 5+ $204.0000 10+ $192.0000 更多的价格 | 188 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-Channel | 175°C | 40 V | - | MOSFET (Metal Oxide) | - | 60A (Ta) | 3V @ 1mA | DPAK+ | U-MOSVI | 6V, 10V | 6.3mOhm @ 30A, 10V | 125 nC @ 10 V | +10V, -20V | 6510 pF @ 10 V | 90W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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