ThunderFET® Series, 单 FET,MOSFET

结果:
50
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Mounting Type
FET Feature
Grade
Qualification
Technology
Vgs (Max)
结果50
搜索条目:
ThunderFET®
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypeGradeTechnologyFET FeatureVgs(th) (Max) @ IdPackage / CaseSupplier Device PackageSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SIR624DP-T1-GE3
MOSFET N-CH 200V 18.6A PPAK SO-8
1+
¥64.8000
5+
¥61.2000
10+
¥57.6000
数量
69,672 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
200 V
18.6A (Tc)
7.5V, 10V
60mOhm @ 10A, 10V
23 nC @ 7.5 V
±20V
1110 pF @ 100 V
52W (Tc)
-
SIR696DP-T1-GE3
MOSFET N-CH 125V 60A PPAK SO-8
1+
¥32.4000
5+
¥30.6000
10+
¥28.8000
数量
24,564 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
125 V
60A (Tc)
7.5V, 10V
11.5mOhm @ 20A, 10V
38 nC @ 10 V
±20V
1410 pF @ 75 V
104W (Tc)
-
SUP90142E-GE3
MOSFET N-CH 200V 90A TO220AB
1+
¥19.8000
5+
¥18.7000
10+
¥17.6000
数量
20,925 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TO-220-3
TO-220AB
ThunderFET®
200 V
90A (Tc)
7.5V, 10V
15.2mOhm @ 30A, 10V
87 nC @ 10 V
±20V
31200 pF @ 100 V
375W (Tc)
-
SIR622DP-T1-RE3
MOSFET N-CH 150V 12.6A PPAK
1+
¥14.4000
5+
¥13.6000
10+
¥12.8000
数量
14,450 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
150 V
12.6A (Ta), 51.6A (Tc)
7.5V, 10V
17.7mOhm @ 20A, 10V
41 nC @ 10 V
±20V
1516 pF @ 75 V
6.25W (Ta), 104W (Tc)
-
SI7322ADN-T1-GE3
MOSFET N-CH 100V 15.1A PPAK
1+
¥12.6000
5+
¥11.9000
10+
¥11.2000
数量
13,560 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
PowerPAK® 1212-8
PowerPAK® 1212-8
ThunderFET®
100 V
15.1A (Tc)
10V
57mOhm @ 5.5A, 10V
13 nC @ 10 V
±20V
360 pF @ 50 V
26W (Tc)
-
SI7434ADP-T1-RE3
MOSFET N-CH 250V 3.7A/12.3A PPAK
1+
¥252.0000
5+
¥238.0000
10+
¥224.0000
数量
13,340 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
250 V
3.7A (Ta), 12.3A (Tc)
7.5V, 10V
150mOhm @ 3.7A, 10V
16.5 nC @ 10 V
±20V
600 pF @ 125 V
5W (Ta), 54.3W (Tc)
-
SISS71DN-T1-GE3
MOSFET P-CH 100V 23A PPAK1212-8S
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
数量
11,750 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
PowerPAK® 1212-8S
PowerPAK® 1212-8S
ThunderFET®
100 V
23A (Tc)
4.5V, 10V
59mOhm @ 5A, 10V
15 nC @ 4.5 V
±20V
1050 pF @ 50 V
57W (Tc)
-
SUM40010EL-GE3
MOSFET N-CH 40V 120A D2PAK
1+
¥387.0000
5+
¥365.5000
10+
¥344.0000
数量
8,800 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
ThunderFET®
40 V
120A (Tc)
4.5V, 10V
1.6mOhm @ 30A, 10V
230 nC @ 10 V
±20V
11155 pF @ 30 V
375W (Tc)
-
SI4434ADY-T1-GE3
MOSFET N-CH 250V 2.8A/4.1A 8SO
1+
¥378.0000
5+
¥357.0000
10+
¥336.0000
数量
7,500 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
8-SOIC (0.154", 3.90mm Width)
8-SO
ThunderFET®
250 V
2.8A (Ta), 4.1A (Tc)
7.5V, 10V
150mOhm @ 2.8A, 10V
16.5 nC @ 10 V
±20V
600 pF @ 125 V
2.9W (Ta), 6W (Tc)
-
SIR692DP-T1-RE3
MOSFET N-CH 250V 24.2A PPAK SO-8
1+
¥279.0000
5+
¥263.5000
10+
¥248.0000
数量
6,982 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
250 V
24.2A (Tc)
7.5V, 10V
63mOhm @ 10A, 10V
30 nC @ 7.5 V
±20V
1405 pF @ 125 V
104W (Tc)
-
SIR616DP-T1-GE3
MOSFET N-CH 200V 20.2A PPAK SO-8
1+
¥144.0000
5+
¥136.0000
10+
¥128.0000
数量
6,020 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
200 V
20.2A (Tc)
7.5V, 10V
50.5mOhm @ 10A, 10V
28 nC @ 7.5 V
±20V
1450 pF @ 100 V
52W (Tc)
-
SUD80460E-GE3
MOSFET N-CH 150V 42A TO252AA
1+
¥8.1000
5+
¥7.6500
10+
¥7.2000
数量
6,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
ThunderFET®
150 V
42A (Tc)
10V
44.7mOhm @ 8.3A, 10V
16 nC @ 10 V
±20V
560 pF @ 50 V
65.2W (Tc)
-
SIJ494DP-T1-GE3
MOSFET N-CH 150V 36.8A PPAK SO-8
1+
¥57.6000
5+
¥54.4000
10+
¥51.2000
数量
5,720 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
150 V
36.8A (Tc)
7.5V, 10V
23.2mOhm @ 15A, 10V
31 nC @ 10 V
±20V
1070 pF @ 75 V
69.4W (Tc)
-
SIR690DP-T1-GE3
MOSFET N-CH 200V 34.4A PPAK SO-8
1+
¥180.0000
5+
¥170.0000
10+
¥160.0000
数量
5,366 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
200 V
34.4A (Tc)
7.5V, 10V
35mOhm @ 20A, 10V
37 nC @ 7.5 V
±20V
1935 pF @ 100 V
104W (Tc)
-
SIR622DP-T1-GE3
MOSFET N-CH 150V 51.6A PPAK SO-8
1+
¥12.6000
5+
¥11.9000
10+
¥11.2000
数量
5,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
150 V
51.6A (Tc)
7.5V, 10V
17.7mOhm @ 20A, 10V
31 nC @ 7.5 V
±20V
1516 pF @ 75 V
104W (Tc)
-
SI7190ADP-T1-RE3
MOSFET N-CH 250V 4.3A/14.4A PPAK
1+
¥270.0000
5+
¥255.0000
10+
¥240.0000
数量
4,779 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
250 V
4.3A (Ta), 14.4A (Tc)
7.5V, 10V
102mOhm @ 4.3A, 10V
22.4 nC @ 10 V
±20V
860 pF @ 100 V
5W (Ta), 56.8W (Tc)
-
SUD80460E-BE3
MOSFET N-CH 150V 42A TO252AA
1+
¥9.0000
5+
¥8.5000
10+
¥8.0000
数量
4,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
ThunderFET®
150 V
42A (Tc)
10V
44.7mOhm @ 8.3A, 10V
16 nC @ 10 V
±20V
560 pF @ 50 V
65.2W (Tc)
-
SIS888DN-T1-GE3
MOSFET N-CH 150V 20.2A PPAK
1+
¥270.0000
5+
¥255.0000
10+
¥240.0000
数量
3,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TA)
N-Channel
-
MOSFET (Metal Oxide)
-
4.2V @ 250µA
PowerPAK® 1212-8S
PowerPAK® 1212-8S
ThunderFET®
150 V
20.2A (Tc)
7.5V, 10V
58mOhm @ 10A, 10V
14.5 nC @ 10 V
±20V
420 pF @ 75 V
52W (Tc)
-
SUM90140E-GE3
MOSFET N-CH 200V 90A D2PAK
1+
¥21.9600
5+
¥20.7400
10+
¥19.5200
数量
2,576 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
ThunderFET®
200 V
90A (Tc)
7.5V, 10V
17mOhm @ 30A, 10V
96 nC @ 10 V
±20V
4132 pF @ 100 V
375W (Tc)
-
SIR618DP-T1-GE3
MOSFET N-CH 200V 14.2A PPAK SO-8
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
数量
2,350 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
ThunderFET®
200 V
14.2A (Tc)
7.5V, 10V
95mOhm @ 8A, 10V
16 nC @ 7.5 V
±20V
740 pF @ 100 V
48W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。