SupreMOS™ 系列, 单 FET,MOSFET

结果:
36
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Mounting Type
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果36
搜索条目:
SupreMOS™
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCP25N60N-F102
MOSFET N-CH 600V 25A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCP25N60N
MOSFET N-CH 600V TO-220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCPF36N60NT
MOSFET N-CH 600V 36A TO220F
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
TO-220F-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
36A (Tc)
10V
90mOhm @ 18A, 10V
112 nC @ 10 V
±30V
4785 pF @ 100 V
-
-
FCB36N60NTM
POWER MOSFET, N-CHANNEL, SUPREMO
联系我们
600 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
36A (Tc)
10V
90mOhm @ 18A, 10V
112 nC @ 10 V
±30V
4785 pF @ 100 V
312W (Tc)
-
FCI25N60N
MOSFET N-CH 600V 25A I2PAK
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
TO-262 (I2PAK)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCP25N60N
MOSFET N-CH 600V 25A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCPF9N60NTYDTU
MOSFET N-CH 600V 9A TO220F-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack, Formed Leads
TO-220F-3 (Y-Forming)
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
9A (Tc)
10V
385mOhm @ 4.5A, 10V
29 nC @ 10 V
±30V
1240 pF @ 100 V
29.8W (Tc)
-
FCP25N60N-F102
MOSFET N-CH 600V 25A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCPF36N60NT
MOSFET N-CH 600V 36A TO220F
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
TO-220F-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
36A (Tc)
10V
90mOhm @ 18A, 10V
112 nC @ 10 V
±30V
4785 pF @ 100 V
-
-
FCA22N60N
MOSFET N-CH 600V 22A TO3PN
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-3P-3, SC-65-3
TO-3PN
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
22A (Tc)
10V
165mOhm @ 11A, 10V
45 nC @ 10 V
±30V
1950 pF @ 100 V
205W (Tc)
-
FCH47N60NF
MOSFET N-CH 600V 45.8A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
45.8A (Tc)
10V
65mOhm @ 23.5A, 10V
157 nC @ 10 V
±30V
6120 pF @ 100 V
368W (Tc)
-
FCP13N60N
MOSFET N-CH 600V 13A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
13A (Tc)
10V
258mOhm @ 6.5A, 10V
39.5 nC @ 10 V
±30V
1765 pF @ 100 V
116W (Tc)
-
FCP22N60N
MOSFET N-CH 600V 22A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
22A (Tc)
10V
165mOhm @ 11A, 10V
45 nC @ 10 V
±45V
1950 pF @ 100 V
205W (Tc)
-
FCPF7N60NT
MOSFET N-CH 600V 6.8A TO220F
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
TO-220F-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
6.8A (Tc)
10V
520mOhm @ 3.4A, 10V
35.6 nC @ 10 V
±30V
960 pF @ 100 V
30.5W (Tc)
-
FCA76N60N
MOSFET N-CH 600V 76A TO3PN
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-3P-3, SC-65-3
TO-3PN
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
76A (Tc)
10V
36mOhm @ 38A, 10V
285 nC @ 10 V
±30V
12385 pF @ 100 V
543W (Tc)
-
FCH22N60N
MOSFET N-CH 600V 22A TO247-3
联系我们
70 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
22A (Tc)
10V
165mOhm @ 11A, 10V
45 nC @ 10 V
±30V
1950 pF @ 100 V
205W (Tc)
-
FCH47N60N
MOSFET N-CH 600V 47A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
47A (Tc)
10V
62mOhm @ 23.5A, 10V
151 nC @ 10 V
±30V
6700 pF @ 100 V
368W (Tc)
-
FCH25N60N
MOSFET N-CH 600V 25A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
126mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCH76N60NF
MOSFET N-CH 600V 72.8A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
5V @ 250µA
SupreMOS™
600 V
72.8A (Tc)
10V
38mOhm @ 38A, 10V
300 nC @ 10 V
±30V
11045 pF @ 100 V
543W (Tc)
-
FCP11N60N
MOSFET N-CH 600V 10.8A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
10.8A (Tc)
10V
299mOhm @ 5.4A, 10V
35.6 nC @ 10 V
±30V
1505 pF @ 100 V
94W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。