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SuperMESH5™ Series, 单 FET，MOSFET
结果:
80
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Grade
Mounting Type
Qualification
Vgs (Max)
FET Feature
FET Type
Vgs(th) (Max) @ Id
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果：80
搜索条目:
SuperMESH5™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | Package / Case | FET Type | Supplier Device Package | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 1+ ¥11.7000 5+ ¥11.0500 10+ ¥10.4000 更多的价格 | 121,024 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | TO-220 | - | MOSFET (Metal Oxide) | - | 6A (Tc) | SuperMESH5™ | 800 V | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5 nC @ 10 V | ±30V | 450 pF @ 100 V | 110W (Tc) | - | ||
 | 1+ ¥21.6000 5+ ¥20.4000 10+ ¥19.2000 更多的价格 | 89,445 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 Full Pack | N-Channel | TO-220FP | - | MOSFET (Metal Oxide) | - | 14A (Tc) | SuperMESH5™ | 800 V | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±30V | 1100 pF @ 100 V | 35W (Tc) | - | ||
| 1+ ¥5.4000 5+ ¥5.1000 10+ ¥4.8000 更多的价格 | 89,186 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | TO-220 | - | MOSFET (Metal Oxide) | - | 4.5A (Tc) | SuperMESH5™ | 800 V | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 7.5 nC @ 10 V | 30V | 255 pF @ 100 V | 85W (Tc) | - | ||
.jpg "STD7N80K5") | 1+ ¥10.8000 5+ ¥10.2000 10+ ¥9.6000 更多的价格 | 87,567 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | - | MOSFET (Metal Oxide) | - | 6A (Tc) | SuperMESH5™ | 800 V | 10V | 1.2Ohm @ 3A, 10V | 5V @ 100µA | 13.4 nC @ 10 V | ±30V | 360 pF @ 100 V | 110W (Tc) | - | ||
| 1+ ¥9.0000 5+ ¥8.5000 10+ ¥8.0000 更多的价格 | 83,009 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 Full Pack | N-Channel | TO-220FP | - | MOSFET (Metal Oxide) | - | 6A (Tc) | SuperMESH5™ | 800 V | 10V | 1.2Ohm @ 3A, 10V | 5V @ 100µA | 13.4 nC @ 10 V | ±30V | 360 pF @ 100 V | 25W (Tc) | - | ||
| 1+ ¥28.8000 5+ ¥27.2000 10+ ¥25.6000 更多的价格 | 77,950 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 Full Pack | N-Channel | TO-220FP | - | MOSFET (Metal Oxide) | - | 12A (Tc) | SuperMESH5™ | 950 V | 10V | 500mOhm @ 6A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 900 pF @ 100 V | 30W (Tc) | - | ||
| 1+ ¥11.7000 5+ ¥11.0500 10+ ¥10.4000 更多的价格 | 70,824 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | TO-220 | - | MOSFET (Metal Oxide) | - | 9A (Tc) | SuperMESH5™ | 950 V | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13 nC @ 10 V | ±30V | 450 pF @ 100 V | 90W (Tc) | - | ||
| 1+ ¥14.0400 5+ ¥13.2600 10+ ¥12.4800 更多的价格 | 52,077 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | - | MOSFET (Metal Oxide) | - | 9A (Tc) | SuperMESH5™ | 950 V | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13 nC @ 10 V | ±30V | 450 pF @ 100 V | 90W (Tc) | - | ||
| 1+ ¥15.3000 5+ ¥14.4500 10+ ¥13.6000 更多的价格 | 30,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 Full Pack | N-Channel | TO-220FP | - | MOSFET (Metal Oxide) | - | 12A (Tc) | SuperMESH5™ | 800 V | 10V | 450mOhm @ 6A, 10V | 5V @ 100µA | 29 nC @ 10 V | ±30V | 870 pF @ 100 V | 35W (Tc) | - | ||
 | 1+ ¥41.4000 5+ ¥39.1000 10+ ¥36.8000 更多的价格 | 29,927 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-247-3 | N-Channel | TO-247-3 | - | MOSFET (Metal Oxide) | - | 17.5A (Tc) | SuperMESH5™ | 950 V | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1500 pF @ 100 V | 250W (Tc) | - | ||
| 1+ ¥4.8600 5+ ¥4.5900 10+ ¥4.3200 更多的价格 | 20,215 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | - | MOSFET (Metal Oxide) | - | 2.5A (Tc) | SuperMESH5™ | 800 V | 10V | 3.5Ohm @ 1A, 10V | 5V @ 100µA | 9.5 nC @ 10 V | ±30V | 130 pF @ 100 V | 60W (Tc) | - | ||
 | 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 20,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | TO-263 (D2Pak) | - | MOSFET (Metal Oxide) | - | 8A (Tc) | SuperMESH5™ | 950 V | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22 nC @ 10 V | ±30V | 630 pF @ 100 V | 130W (Tc) | - | ||
 | 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 20,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-247-3 | N-Channel | TO-247-3 | - | MOSFET (Metal Oxide) | - | 9A (Tc) | SuperMESH5™ | 950 V | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13 nC @ 10 V | ±30V | 450 pF @ 100 V | 90W (Tc) | - | ||
 | 1+ ¥8.2800 5+ ¥7.8200 10+ ¥7.3600 更多的价格 | 15,680 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 Full Pack | N-Channel | TO-220FP | - | MOSFET (Metal Oxide) | - | 9A (Tc) | SuperMESH5™ | 950 V | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13 nC @ 10 V | ±30V | 450 pF @ 100 V | 25W (Tc) | - | ||
| 1+ ¥18.0000 5+ ¥17.0000 10+ ¥16.0000 更多的价格 | 13,104 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | TO-220 | - | MOSFET (Metal Oxide) | - | 8A (Tc) | SuperMESH5™ | 950 V | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22 nC @ 10 V | ±30V | 630 pF @ 100 V | 130W (Tc) | - | ||
| 1+ ¥26.1000 5+ ¥24.6500 10+ ¥23.2000 更多的价格 | 12,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | TO-220 | - | MOSFET (Metal Oxide) | - | 12A (Tc) | SuperMESH5™ | 950 V | 10V | 500mOhm @ 6A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 900 pF @ 100 V | 170W (Tc) | - | ||
| 1+ ¥16.2000 5+ ¥15.3000 10+ ¥14.4000 更多的价格 | 11,370 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 Full Pack | N-Channel | TO-220FP | - | MOSFET (Metal Oxide) | - | 8A (Tc) | SuperMESH5™ | 950 V | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22 nC @ 10 V | ±30V | 630 pF @ 100 V | 30W (Tc) | - | ||
| 1+ ¥10.8000 5+ ¥10.2000 10+ ¥9.6000 更多的价格 | 10,220 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | - | MOSFET (Metal Oxide) | - | 6A (Tc) | SuperMESH5™ | 800 V | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5 nC @ 10 V | ±30V | 450 pF @ 100 V | 110W (Tc) | - | ||
| 1+ ¥45.0000 5+ ¥42.5000 10+ ¥40.0000 更多的价格 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | TO-220 | - | MOSFET (Metal Oxide) | - | 19.5A (Tc) | SuperMESH5™ | 800 V | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1600 pF @ 100 V | 250W (Tc) | - | ||
| 1+ ¥10.8000 5+ ¥10.2000 10+ ¥9.6000 更多的价格 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | TO-220 | - | MOSFET (Metal Oxide) | - | 14A (Tc) | SuperMESH5™ | 800 V | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±30V | 1100 pF @ 100 V | 190W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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