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StrongIRFET™ 2 Series, 单 FET，MOSFET
结果:
35
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Mounting Type
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果：35
搜索条目:
StrongIRFET™ 2
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Operating Temperature | Grade | Technology | FET Feature | Series | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Package / Case | Qualification |
|---|
 | 1+ $21.6000 5+ $20.4000 10+ $19.2000 更多的价格 | 20,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 39A (Ta), 351A (Tc) | 6V, 10V | 1.23mOhm @ 150A, 10V | 3.8V @ 267µA | 255 nC @ 10 V | ±20V | 12000 pF @ 40 V | 3.8W (Ta), 300W (Tc) | PG-HSOF-8 | 8-PowerSFN | - | ||
 | 1+ $8.3520 5+ $7.8880 10+ $7.4240 更多的价格 | 4,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 20A (Ta), 129A (Tc) | 6V, 10V | 4mOhm @ 70A, 10V | 3.8V @ 85µA | 81 nC @ 10 V | ±20V | 3800 pF @ 40 V | 3W (Ta), 150W (Tc) | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | ||
 | 1+ $51.3481 5+ $48.4954 10+ $45.6427 更多的价格 | 46 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 274A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.8V @ 267µA | 241 nC @ 10 V | ±20V | 11000 pF @ 50 V | 300W (Tc) | PG-TO263-7-14 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 27A (Ta), 184A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.8V @ 169µA | 154 nC @ 10 V | ±20V | 7300 pF @ 50 V | 3.8W (Ta), 250W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 83A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.8V @ 169µA | 154 nC @ 10 V | ±20V | 7300 pF @ 50 V | 41W (Tc) | PG-TO220 Full Pack | TO-220-3 Full Pack | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 22A (Ta), 115A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | 3.8V @ 85µA | 81 nC @ 10 V | ±20V | 3800 pF @ 40 V | 3.8W (Ta), 150W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 15A (Ta), 77A (Tc) | 6V, 10V | 8.2mOhm @ 50A, 10V | 3.8V @ 46µA | 42 nC @ 10 V | ±20V | 2000 pF @ 50 V | 3.8W (Ta), 100W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 259A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 194µA | 186 nC @ 10 V | ±20V | 8700 pF @ 40 V | 250W (Tc) | PG-TO263-7-14 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 126A (Tc) | 6V, 10V | 3.9mOhm @ 80A, 10V | 3.8V @ 85µA | 81 nC @ 10 V | ±20V | 3800 pF @ 40 V | 150W (Tc) | PG-TO263-7-14 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 209A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 139µA | 133 nC @ 10 V | ±20V | 6200 pF @ 40 V | 214W (Tc) | PG-TO263-7-14 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 19A (Ta), 117A (Tc) | 6V, 10V | 5.05mOhm @ 60A, 10V | 3.8V @ 84µA | 76 nC @ 10 V | ±20V | 3600 pF @ 50 V | 3.8W (Ta), 150W (Tc) | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 282A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 267µA | 255 nC @ 10 V | ±20V | 12000 pF @ 40 V | 300W (Tc) | PG-TO263-7-14 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 11A (Ta), 52A (Tc) | 6V, 10V | 13mOhm @ 30A, 10V | 3.8V @ 30µA | 28 nC @ 10 V | ±20V | 1300 pF @ 50 V | 3W (Ta), 71W (Tc) | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 19.4A (Ta), 110A (Tc) | 6V, 10V | 5mOhm @ 60A, 10V | 3.8V @ 84µA | 76 nC @ 10 V | ±20V | 3600 pF @ 50 V | 3.8W (Ta), 150W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 32A (Ta), 191A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 194µA | 186 nC @ 10 V | ±20V | 8700 pF @ 40 V | 3.8W (Ta), 250W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 12A (Ta), 52A (Tc) | 6V, 10V | 12.9mOhm @ 30A, 10V | 3.8V @ 30µA | 28 nC @ 10 V | ±20V | 1300 pF @ 50 V | 3.8W (Ta), 71W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 21A (Ta), 139A (Tc) | 6V, 10V | 4.25mOhm @ 80A, 10V | 3.8V @ 93µA | 85 nC @ 10 V | ±20V | 4000 pF @ 50 V | 3.8W (Ta), 167W (Tc) | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 103A (Tc) | 6V, 10V | 5.05mOhm @ 60A, 10V | 3.8V @ 85µA | 76 nC @ 10 V | ±20V | 3600 pF @ 50 V | 150W (Tc) | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 100 V | 21A (Ta), 135A (Tc) | 6V, 10V | 4.35mOhm @ 80A, 10V | 3.8V @ 93µA | 85 nC @ 10 V | ±20V | 4000 pF @ 50 V | 3.8W (Ta), 167W (Tc) | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | StrongIRFET™ 2 | 80 V | 94A (Tc) | 6V, 10V | 5.5mOhm @ 60A, 10V | 3.8V @ 55µA | 54 nC @ 10 V | ±20V | 2500 pF @ 40 V | 107W (Tc) | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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