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STripFET™ F7 系列, 单 FET，MOSFET
结果:
51
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Operating Temperature
Mounting Type
Vgs (Max)
Grade
Qualification
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Technology
结果：51
搜索条目:
STripFET™ F7
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature | Supplier Device Package | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Series | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification | Grade |
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 | 联系我们 | 74,041 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | 40 V | -55°C ~ 175°C (TJ) | PowerFlat™ (5x6) | MOSFET (Metal Oxide) | - | 120A (Tc) | 4V @ 250µA | STripFET™ F7 | 10V | 1.6mOhm @ 16A, 10V | 43 nC @ 10 V | ±20V | 3600 pF @ 25 V | 150W (Tc) | AEC-Q101 | Automotive | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | 120 V | -55°C ~ 175°C (TJ) | PowerFlat™ (5x6) | MOSFET (Metal Oxide) | - | 100A (Tc) | 4.5V @ 250µA | STripFET™ F7 | 10V | 7.5mOhm @ 9A, 10V | 46 nC @ 10 V | ±20V | 3300 pF @ 60 V | 136W (Tc) | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | 45 V | -55°C ~ 175°C (TJ) | PowerFlat™ (5x6) | MOSFET (Metal Oxide) | - | 120A (Tc) | 1.2V @ 250µA | STripFET™ F7 | 4.5V, 10V | 1.8mOhm @ 18A, 10V | 33 nC @ 4.5 V | ±20V | 5170 pF @ 25 V | 150W (Tc) | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-247-3 | 100 V | -55°C ~ 175°C (TJ) | TO-247-3 | MOSFET (Metal Oxide) | - | 180A (Tc) | 4.5V @ 250µA | STripFET™ F7 | 10V | 3mOhm @ 90A, 10V | 160 nC @ 10 V | ±20V | 11550 pF @ 25 V | 300W (Tc) | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | 100 V | -55°C ~ 150°C (TJ) | PowerFlat™ (3.3x3.3) | MOSFET (Metal Oxide) | - | 44A (Tc) | 4.5V @ 250µA | STripFET™ F7 | 10V | 13.3mOhm @ 6A, 10V | 30 nC @ 10 V | ±20V | 1820 pF @ 50 V | 52W (Tc) | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100 V | -55°C ~ 175°C (TJ) | TO-252 (DPAK) | MOSFET (Metal Oxide) | - | 80A (Tc) | 2.5V @ 250µA | STripFET™ F7 | 4.5V, 10V | 9mOhm @ 40A, 10V | 73 nC @ 10 V | ±20V | 4000 pF @ 25 V | 125W (Tc) | AEC-Q101 | Automotive | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 80 V | -55°C ~ 175°C (TJ) | H2Pak-2 | MOSFET (Metal Oxide) | - | 110A (Tc) | 4.5V @ 250µA | STripFET™ F7 | 10V | 6.6mOhm @ 55A, 10V | 45 nC @ 10 V | ±20V | 3200 pF @ 25 V | 170W (Tc) | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 Full Pack | 40 V | -55°C ~ 175°C (TJ) | TO-220FP | MOSFET (Metal Oxide) | - | 90A (Tc) | 4V @ 250µA | STripFET™ F7 | 10V | 2.5mOhm @ 60A, 10V | 67 nC @ 10 V | ±20V | 5640 pF @ 25 V | 35W (Tc) | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | 60 V | -55°C ~ 175°C (TJ) | PowerFlat™ (5x6) | MOSFET (Metal Oxide) | - | 32A (Ta), 120A (Tc) | 4V @ 250µA | STripFET™ F7 | 10V | 2.4mOhm @ 16A, 10V | 79.5 nC @ 10 V | ±20V | 4825 pF @ 25 V | 4.8W (Ta), 166W (Tc) | - | - | ||
| 联系我们 | 156,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | 60 V | -55°C ~ 175°C (TJ) | PowerFlat™ (5x6) | MOSFET (Metal Oxide) | - | 130A (Tc) | 4V @ 250µA | STripFET™ F7 | 10V | 3.5mOhm @ 13A, 10V | 42 nC @ 10 V | ±20V | 2600 pF @ 25 V | 4.8W (Ta), 125W (Tc) | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-7, D²Pak (6 Leads + Tab) | 60 V | -55°C ~ 175°C (TJ) | H2PAK-6 | MOSFET (Metal Oxide) | - | 180A (Tc) | 4V @ 250µA | STripFET™ F7 | 10V | 1.5mOhm @ 90A, 10V | 170 nC @ 10 V | ±20V | 11000 pF @ 25 V | 333W (Tc) | AEC-Q101 | Automotive | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 80 V | -55°C ~ 175°C (TJ) | H2Pak-2 | MOSFET (Metal Oxide) | - | 110A (Tc) | 4.5V @ 250µA | STripFET™ F7 | 10V | 5mOhm @ 55A, 10V | 60 nC @ 10 V | ±20V | 4500 pF @ 25 V | 205W (Tc) | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | 100 V | - | I-PAK | MOSFET (Metal Oxide) | - | 25A | - | STripFET™ F7 | 4.5V, 10V | - | - | - | - | - | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | 40 V | - | TO-220 | MOSFET (Metal Oxide) | - | 180A (Tc) | - | STripFET™ F7 | 4.5V, 10V | - | - | - | - | 365W (Tc) | - | - | ||
 | 联系我们 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | 60 V | -55°C ~ 175°C (TJ) | TO-220 | MOSFET (Metal Oxide) | - | 120A (Tc) | 4V @ 250µA | STripFET™ F7 | 10V | 2mOhm @ 60A, 10V | 100 nC @ 10 V | ±20V | 6400 pF @ 25 V | 237W (Tc) | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 80 V | -55°C ~ 175°C (TJ) | H2Pak-2 | MOSFET (Metal Oxide) | - | 90A (Tc) | 4.5V @ 250µA | STripFET™ F7 | 10V | 4mOhm @ 45A, 10V | 96 nC @ 10 V | ±20V | 6340 pF @ 40 V | 200W (Tc) | AEC-Q101 | Automotive | ||
| 联系我们 | 5,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | 60 V | -55°C ~ 175°C (TJ) | TO-220 | MOSFET (Metal Oxide) | - | 80A (Tc) | 4V @ 250µA | STripFET™ F7 | 10V | 5mOhm @ 40A, 10V | 42 nC @ 10 V | ±20V | 2600 pF @ 25 V | 160W (Tc) | - | - | ||
.jpg "STD105N10F7AG") | 联系我们 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100 V | -55°C ~ 175°C (TJ) | DPAK | MOSFET (Metal Oxide) | - | 80A (Tc) | 4.5V @ 250µA | STripFET™ F7 | 10V | 8mOhm @ 40A, 10V | 61 nC @ 10 V | ±20V | 4369 pF @ 50 V | 120W (Tc) | AEC-Q101 | Automotive | ||
 | 联系我们 | 16,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 60 V | -55°C ~ 175°C (TJ) | TO-263 (D2Pak) | MOSFET (Metal Oxide) | - | 80A (Tc) | 4V @ 250µA | STripFET™ F7 | 10V | 5mOhm @ 40A, 10V | 42 nC @ 10 V | ±20V | 2600 pF @ 25 V | 160W (Tc) | - | - | ||
 | 联系我们 | 21,200 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount, Wettable Flank | N-Channel | 8-PowerVDFN | 100 V | -55°C ~ 175°C (TJ) | PowerFlat™ (5x6) | MOSFET (Metal Oxide) | - | 107A (Tc) | 4.5V @ 250µA | STripFET™ F7 | 10V | 6mOhm @ 53A, 10V | 72.5 nC @ 10 V | ±20V | 5600 pF @ 50 V | 136W (Tc) | AEC-Q101 | Automotive |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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