POWER MOS IV® 系列, 单 FET,MOSFET

结果:
16
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Mounting Type
Supplier Device Package
Package / Case
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果16
搜索条目:
POWER MOS IV®
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
APT40M75JN
MOSFET N-CH 400V 56A ISOTOP
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数量
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
-
75mOhm @ 28A, 10V
4V @ 2.5mA
POWER MOS IV®
400 V
56A (Tc)
10V
370 nC @ 10 V
±30V
6800 pF @ 25 V
520W (Tc)
-
APT5012JN
MOSFET N-CH 500V 43A ISOTOP
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数量
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
-
120mOhm @ 21.5A, 10V
4V @ 2.5mA
POWER MOS IV®
500 V
43A (Tc)
10V
370 nC @ 10 V
±30V
6500 pF @ 25 V
520W (Tc)
-
APT5020BN
MOSFET N-CH 500V 28A TO247AD
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
200mOhm @ 14A, 10V
4V @ 1mA
POWER MOS IV®
500 V
28A (Tc)
10V
210 nC @ 10 V
±30V
3500 pF @ 25 V
360W (Tc)
-
APT5020BNFR
MOSFET N-CH 500V 28A TO247AD
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1,934 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
200mOhm @ 14A, 10V
4V @ 1mA
POWER MOS IV®
500 V
28A (Tc)
10V
210 nC @ 10 V
±30V
3500 pF @ 25 V
360W (Tc)
-
APT5025BN
MOSFET N-CH 500V 23A TO247AD
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
250mOhm @ 11.5A, 10V
4V @ 1mA
POWER MOS IV®
500 V
23A (Tc)
10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT5022BNG
MOSFET N-CH 500V 27A TO247AD
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
220mOhm @ 13.5A, 10V
4V @ 1mA
POWER MOS IV®
500 V
27A (Tc)
10V
210 nC @ 10 V
±30V
3500 pF @ 25 V
360W (Tc)
-
APT6030BN
MOSFET N-CH 600V 23A TO247AD
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
300mOhm @ 11.5A, 10V
4V @ 1mA
POWER MOS IV®
600 V
23A (Tc)
10V
210 nC @ 10 V
±30V
3500 pF @ 25 V
360W (Tc)
-
APT8018JN
MOSFET N-CH 800V 40A ISOTOP
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数量
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
-
180mOhm @ 20A, 10V
4V @ 5mA
POWER MOS IV®
800 V
40A (Tc)
10V
700 nC @ 10 V
±30V
14000 pF @ 25 V
690W (Tc)
-
APT6040BN
MOSFET N-CH 600V 18A TO247AD
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
400mOhm @ 9A, 10V
4V @ 1mA
POWER MOS IV®
600 V
18A (Tc)
10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT8075BN
MOSFET N-CH 800V 13A TO247AD
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
750mOhm @ 6.5A, 10V
4V @ 1mA
POWER MOS IV®
800 V
13A (Tc)
10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT6040BNG
MOSFET N-CH 600V 18A TO247AD
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
400mOhm @ 9A, 10V
4V @ 1mA
POWER MOS IV®
600 V
18A (Tc)
10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT1001R1BN
MOSFET N-CH 1000V 10.5A TO247AD
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
1.1Ohm @ 5.25A, 10V
4V @ 1mA
POWER MOS IV®
1000 V
10.5A (Tc)
10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT1001RBN
MOSFET N-CH 1000V 11A TO247AD
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
1Ohm @ 5.5A, 10V
4V @ 1mA
POWER MOS IV®
1000 V
11A (Tc)
10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT1002RBNG
MOSFET N-CH 1000V 8A TO247AD
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
1.6Ohm @ 4A, 10V
4V @ 1mA
POWER MOS IV®
1000 V
8A (Tc)
10V
105 nC @ 10 V
±30V
1800 pF @ 25 V
240W (Tc)
-
APT4065BNG
MOSFET N-CH 400V 11A TO247AD
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
-
650mOhm @ 5.5A, 10V
4V @ 1mA
POWER MOS IV®
400 V
11A (Tc)
10V
55 nC @ 10 V
±30V
950 pF @ 25 V
180W (Tc)
-
APT40M42JN
MOSFET N-CH 400V 86A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
-
42mOhm @ 43A, 10V
4V @ 5mA
POWER MOS IV®
400 V
86A (Tc)
10V
760 nC @ 10 V
±30V
14000 pF @ 25 V
690W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。