Polar P3™ Series, 单 FET,MOSFET

结果:
17
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Operating Temperature
FET Type
Mounting Type
FET Feature
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果17
搜索条目:
Polar P3™
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTP36P15P
MOSFET P-CH 150V 36A TO220AB
1+
¥72.0000
5+
¥68.0000
10+
¥64.0000
数量
1,900 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
P-Channel
-
MOSFET (Metal Oxide)
-
36A (Tc)
4.5V @ 250µA
Polar P3™
150 V
10V
110mOhm @ 18A, 10V
55 nC @ 10 V
±20V
3100 pF @ 25 V
300W (Tc)
-
IXTP3N100P
MOSFET N-CH 1000V 3A TO220AB
1+
¥36.0000
5+
¥34.0000
10+
¥32.0000
数量
1,134 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
3A (Tc)
4.5V @ 250µA
Polar P3™
1000 V
10V
4.8Ohm @ 1.5A, 10V
39 nC @ 10 V
±20V
1100 pF @ 25 V
125W (Tc)
-
IXTX4N300P3HV
MOSFET N-CH 3000V 4A TO247PLUSHV
联系我们
数量
1 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247PLUS-HV
N-Channel
-
MOSFET (Metal Oxide)
-
4A (Tc)
5V @ 250µA
Polar P3™
3000 V
10V
12.5Ohm @ 2A, 10V
139 nC @ 10 V
±20V
3680 pF @ 25 V
960W (Tc)
-
IXTH3N200P3HV
MOSFET N-CH 2000V 3A TO247
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
-
3A (Tc)
5V @ 250µA
Polar P3™
2000 V
10V
8Ohm @ 1.5A, 10V
70 nC @ 10 V
±20V
1860 pF @ 25 V
520W (Tc)
-
IXTT2N300P3HV
MOSFET N-CH 3000V 2A TO268
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 155°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268HV (IXTT)
N-Channel
-
MOSFET (Metal Oxide)
-
2A (Tc)
5V @ 250µA
Polar P3™
3000 V
10V
21Ohm @ 1A, 10V
73 nC @ 10 V
±20V
1890 pF @ 25 V
520W (Tc)
-
IXTH2N300P3HV
MOSFET N-CH 3000V 2A TO247HV
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
2A (Tc)
5V @ 250µA
Polar P3™
3000 V
10V
21Ohm @ 1A, 10V
73 nC @ 10 V
±20V
1890 pF @ 25 V
520W (Tc)
-
IXTH1N200P3
MOSFET N-CH 2000V 1A TO247
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
2000 V
10V
40Ohm @ 500mA, 10V
23.5 nC @ 10 V
±20V
646 pF @ 25 V
125W (Tc)
-
IXTF2N300P3
MOSFET N-CH 3000V 1.6A I4PAC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
ISOPLUSi5-Pak™
ISOPLUS i4-PAC™
N-Channel
-
MOSFET (Metal Oxide)
-
1.6A (Tc)
5V @ 250µA
Polar P3™
3000 V
10V
21Ohm @ 1A, 10V
73 nC @ 10 V
±20V
1890 pF @ 25 V
160W (Tc)
-
IXTH1N300P3HV
MOSFET N-CH 3000V 1A TO247HV
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
3000 V
10V
50Ohm @ 500mA, 10V
30.6 nC @ 10 V
±20V
895 pF @ 25 V
195W (Tc)
-
IXTF6N200P3
MOSFET N-CH 2000V 4A I4PAC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
ISOPLUSi5-Pak™
ISOPLUS i4-PAC™
N-Channel
-
MOSFET (Metal Oxide)
-
4A (Tc)
5V @ 250µA
Polar P3™
2000 V
10V
4.2Ohm @ 3A, 10V
143 nC @ 10 V
±20V
3700 pF @ 25 V
215W (Tc)
-
IXTH06N220P3HV
MOSFET N-CH 2200V 600MA TO247HV
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
600mA (Tc)
4V @ 250µA
Polar P3™
2200 V
10V
80Ohm @ 300mA, 10V
10.4 nC @ 10 V
±20V
290 pF @ 25 V
104W (Tc)
-
IXTH04N300P3HV
MOSFET N-CH 3000V 400MA TO247HV
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
400mA (Tc)
4V @ 250µA
Polar P3™
3000 V
10V
190Ohm @ 200mA, 10V
13 nC @ 10 V
±20V
283 pF @ 25 V
104W (Tc)
-
IXTX6N200P3HV
MOSFET N-CH 2000V 6A TO247PLUSHV
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247PLUS-HV
N-Channel
-
MOSFET (Metal Oxide)
-
6A (Tc)
5V @ 250µA
Polar P3™
2000 V
10V
4Ohm @ 3A, 10V
143 nC @ 10 V
±20V
3700 pF @ 25 V
960W (Tc)
-
IXTH1N200P3HV
MOSFET N-CH 2000V 1A TO247HV
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
2000 V
10V
40Ohm @ 500mA, 10V
23.5 nC @ 10 V
±20V
646 pF @ 25 V
125W (Tc)
-
IXTT1N300P3HV
MOSFET N-CH 3000V 1A TO268
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268HV (IXTT)
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
3000 V
10V
50Ohm @ 500mA, 10V
30.6 nC @ 10 V
±20V
895 pF @ 25 V
195W (Tc)
-
IXTA1N200P3HV
MOSFET N-CH 2000V 1A TO263
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
2000 V
10V
40Ohm @ 500mA, 10V
23.5 nC @ 10 V
±20V
646 pF @ 25 V
125W (Tc)
-
IXTT3N200P3HV
MOSFET N-CH 2000V 3A TO268
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268HV (IXTT)
N-Channel
-
MOSFET (Metal Oxide)
-
3A (Tc)
5V @ 250µA
Polar P3™
2000 V
10V
8Ohm @ 1.5A, 10V
70 nC @ 10 V
±20V
1860 pF @ 25 V
520W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。