OptiMOS™-5 Series, 单 FET,MOSFET

结果:
54
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
Grade
Qualification
Vgs (Max)
FET Feature
FET Type
Mounting Type
Technology
结果54
搜索条目:
OptiMOS™-5
选择
图片产品详情单价可用性ECAD 模型Mounting TypeFET TypeDrain to Source Voltage (Vdss)Operating TemperatureGradePackage / CaseTechnologyFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
ISC046N04NM5ATMA1
40V 4.6M OPTIMOS MOSFET SUPERSO8
1+
¥21.6000
5+
¥20.4000
10+
¥19.2000
数量
40,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
19A (Ta), 77A (Tc)
7V, 10V
4.6mOhm @ 35A, 10V
3.4V @ 17µA
21 nC @ 10 V
±20V
1400 pF @ 20 V
3W (Ta), 50W (Tc)
PG-TDSON-8 FL
-
IAUC24N10S5L300ATMA1
MOSFET N-CH 100V 24A TDSON-8-33
1+
¥18.0000
5+
¥17.0000
10+
¥16.0000
数量
25,761 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
24A (Tc)
4.5V, 10V
30mOhm @ 12A, 10V
2.2V @ 12µA
11 nC @ 10 V
±20V
670 pF @ 50 V
38W (Tc)
PG-TDSON-8-33
-
IAUT150N10S5N035ATMA1
1+
¥27.0000
5+
¥25.5000
10+
¥24.0000
数量
24,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerSFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
150A (Tc)
6V, 10V
3.5mOhm @ 75A, 10V
3.8V @ 110µA
87 nC @ 10 V
±20V
6110 pF @ 50 V
166W (Tc)
PG-HSOF-8-1
-
IAUC90N10S5N062ATMA1
MOSFET N-CH 100V 90A TDSON-8-34
1+
¥81.0000
5+
¥76.5000
10+
¥72.0000
数量
14,940 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
90A (Tc)
6V, 10V
6.2mOhm @ 45A, 10V
3.8V @ 59µA
36 nC @ 10 V
±20V
3275 pF @ 50 V
115W (Tc)
PG-TDSON-8-34
AEC-Q101
IAUT300N10S5N015ATMA1
1+
¥46.8000
5+
¥44.2000
10+
¥41.6000
数量
13,519 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerSFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
300A (Tc)
6V, 10V
1.5mOhm @ 100A, 10V
3.8V @ 275µA
216 nC @ 10 V
±20V
16011 pF @ 50 V
375W (Tc)
PG-HSOF-8-1
-
IPZ40N04S55R4ATMA1
MOSFET N-CH 40V 40A 8TSDSON
1+
¥19.8000
5+
¥18.7000
10+
¥17.6000
数量
8,640 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerVDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
40A (Tc)
7V, 10V
5.4mOhm @ 20A, 10V
3.4V @ 17µA
23 nC @ 10 V
±20V
1300 pF @ 25 V
48W (Tc)
PG-TSDSON-8
AEC-Q101
IPZ40N04S5L2R8ATMA1
MOSFET N-CH 40V 40A 8TSDSON
1+
¥18.0000
5+
¥17.0000
10+
¥16.0000
数量
7,652 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerVDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
40A (Tc)
4.5V, 10V
2.8mOhm @ 20A, 10V
2V @ 30µA
52 nC @ 10 V
±16V
2800 pF @ 25 V
71W (Tc)
PG-TSDSON-8
AEC-Q101
IAUZ40N10S5N130ATMA1
MOSFET N-CH 100V 40A 8TSDSON-33
1+
¥216.0000
5+
¥204.0000
10+
¥192.0000
数量
5,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
40A (Tc)
6V, 10V
13mOhm @ 20A, 10V
3.8V @ 27µA
24 nC @ 10 V
±20V
1525 pF @ 50 V
68W (Tc)
PG-TSDSON-8-33
AEC-Q101
IAUC28N08S5L230ATMA1
MOSFET N-CH 80V 28A 8TDSON-33
1+
¥117.0000
5+
¥110.5000
10+
¥104.0000
数量
5,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
28A (Tc)
4.5V, 10V
23mOhm @ 14A, 10V
2V @ 11µA
15.1 nC @ 10 V
±20V
867 pF @ 40 V
38W (Tc)
PG-TDSON-8-33
AEC-Q101
IPZ40N04S5L7R4ATMA1
MOSFET N-CH 40V 40A 8TSDSON
1+
¥9.3600
5+
¥8.8400
10+
¥8.3200
数量
5,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerVDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
40A (Tc)
4.5V, 10V
7.4mOhm @ 20A, 10V
2V @ 10µA
17 nC @ 10 V
±16V
920 pF @ 25 V
34W (Tc)
PG-TSDSON-8
AEC-Q101
IAUZ40N06S5N050ATMA1
MOSFET N-CH 60V 40A TSDSON-8-33
1+
¥216.0000
5+
¥204.0000
10+
¥192.0000
数量
4,920 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
40A (Tj)
-
5mOhm @ 20A, 10V
3.4V @ 29µA
30.5 nC @ 10 V
±20V
2200 pF @ 30 V
71W (Tc)
PG-TSDSON-8-33
-
IAUC100N10S5N040ATMA1
MOSFET N-CH 100V 100A 8TDSON-34
1+
¥13.5000
5+
¥12.7500
10+
¥12.0000
数量
4,578 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 90µA
78 nC @ 10 V
±20V
5200 pF @ 50 V
167W (Tc)
PG-TDSON-8-34
-
IAUZ20N08S5L300ATMA1
MOSFET N-CH 80V 20A 8TSDSON-32
1+
¥90.0000
5+
¥85.0000
10+
¥80.0000
数量
4,441 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
20A (Tc)
4.5V, 10V
30mOhm @ 10A, 10V
2V @ 8µA
10.5 nC @ 10 V
±20V
599 pF @ 40 V
30W (Tc)
PG-TSDSON-8-32
AEC-Q101
IPB020N10N5LFATMA1
MOSFET N-CH 100V 120A TO263-3
1+
¥50.4000
5+
¥47.6000
10+
¥44.8000
数量
4,174 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 150°C (TJ)
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
OptiMOS™-5
120A (Tc)
10V
2mOhm @ 100A, 10V
4.1V @ 270µA
195 nC @ 10 V
±20V
840 pF @ 50 V
313W (Tc)
PG-TO263-3
-
IAUT200N08S5N023ATMA1
1+
¥153.0000
5+
¥144.5000
10+
¥136.0000
数量
4,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 175°C (TJ)
-
8-PowerSFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
200A (Tc)
6V, 10V
2.3mOhm @ 100A, 10V
3.8V @ 130µA
110 nC @ 10 V
±20V
7670 pF @ 40 V
200W (Tc)
PG-HSOF-8-1
-
IAUZ30N10S5L240ATMA1
MOSFET N-CH 100V 30A 8TSDSON-32
1+
¥18.0000
5+
¥17.0000
10+
¥16.0000
数量
3,642 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
30A (Tc)
4.5V, 10V
24mOhm @ 15A, 10V
2.2V @ 15µA
14 nC @ 10 V
±20V
832 pF @ 50 V
45.5W (Tc)
PG-TSDSON-8-32
AEC-Q101
IPZ40N04S53R1ATMA1
MOSFET N-CH 40V 40A 8TSDSON
1+
¥126.0000
5+
¥119.0000
10+
¥112.0000
数量
3,580 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerVDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
40A (Tc)
7V, 10V
3.1mOhm @ 20A, 10V
3.4V @ 30µA
41 nC @ 10 V
±20V
2310 pF @ 25 V
71W (Tc)
PG-TSDSON-8
AEC-Q101
IAUC100N08S5N043ATMA1
MOSFET N-CH 80V 100A 8TDSON-34
1+
¥270.0000
5+
¥255.0000
10+
¥240.0000
数量
3,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 175°C (TJ)
Automotive
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 63µA
56 nC @ 10 V
±20V
3860 pF @ 40 V
125W (Tc)
PG-TDSON-8-34
AEC-Q101
IAUT260N10S5N019ATMA1
1+
¥41.4000
5+
¥39.1000
10+
¥36.8000
数量
2,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerSFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
260A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.8V @ 210µA
166 nC @ 10 V
±20V
11830 pF @ 50 V
300W (Tc)
PG-HSOF-8-1
-
IAUT240N08S5N019ATMA1
1+
¥630.0000
5+
¥595.0000
10+
¥560.0000
数量
2,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 175°C (TJ)
-
8-PowerSFN
MOSFET (Metal Oxide)
-
OptiMOS™-5
240A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.8V @ 160µA
130 nC @ 10 V
±20V
9264 pF @ 40 V
230W (Tc)
PG-HSOF-8-1
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。