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OptiMOS™ 5 系列, 单 FET，MOSFET
结果:
127
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
结果：127
搜索条目:
OptiMOS™ 5
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature | Grade | Package / Case | Technology | FET Feature | Series | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Qualification | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
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 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 10V | 1.55mOhm @ 50A, 10V | 113 nC @ 10 V | ±20V | 9000 pF @ 30 V | 3W (Ta), 217W (Tc) | PG-TDSON-8 FL | - | 32A (Ta), 275A (Tc) | 3.45V @ 120µA | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 30 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 0.35mOhm @ 50A, 10V | 262 nC @ 10 V | ±20V | 18000 pF @ 15 V | 2.5W (Ta), 278W (Tc) | PG-TSON-8-U04 | - | 66A (Ta), 700A (Tc) | 2V @ 1.46mA | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 0.86mOhm @ 50A, 10V | 202 nC @ 10 V | ±20V | 14000 pF @ 30 V | 3W (Ta), 333W (Tc) | PG-TSON-8-U04 | - | 42A (Ta), 447A (Tc) | 2.3V @ 163µA | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 6V, 10V | 0.9mOhm @ 50A, 10V | 150 nC @ 10 V | ±20V | 12000 pF @ 30 V | 3W (Ta), 333W (Tc) | PG-TSON-8-U04 | - | 42A (Ta), 445A (Tc) | 3.3V @ 163µA | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 80 V | -55°C ~ 175°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 6V, 10V | 1.57mOhm @ 50A, 10V | 133 nC @ 10 V | ±20V | 9200 pF @ 40 V | 3W (Ta), 333W (Tc) | PG-TSON-8-U04 | - | 31A (Ta), 323A (Tc) | 3.8V @ 159µA | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 100 V | -55°C ~ 175°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 6V, 10V | 2.05mOhm @ 50A, 10V | 134 nC @ 10 V | ±20V | 9500 pF @ 50 V | 3W (Ta), 333W (Tc) | PG-TSON-8-U04 | - | 26A (Ta), 276A (Tc) | 3.8V @ 159µA | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 150 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 8V, 10V | 6.32mOhm @ 50A, 10V | 60 nC @ 10 V | ±20V | 4700 pF @ 75 V | 2.5W (Ta), 278W (Tc) | PG-TSON-8-U04 | - | 14.1A (Ta), 148A (Tc) | 4.6V @ 159µA | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 25 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 0.29mOhm @ 50A, 10V | 254 nC @ 10 V | ±16V | 17000 pF @ 12 V | 2.5W (Ta), 278W (Tc) | PG-TSON-8-U04 | - | 75A (Ta), 789A (Tc) | 2V @ 1.448mA | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 80 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 55 nC @ 4.5 V | ±20V | 7500 pF @ 40 V | 2.5W (Ta), 156W (Tc) | PG-TDSON-8 | - | 25A (Ta), 195A (Tc) | 2.3V @ 115µA | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 100 V | -55°C ~ 175°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 10V | 3.5mOhm @ 50A, 10V | 88 nC @ 10 V | ±20V | 7200 pF @ 50 V | 3W (Ta), 217W (Tc) | PG-TDSON-8 FL | - | 19A (Ta), 164A (Tc) | 3.9V @ 115µA | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 150 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 8V, 10V | 11mOhm @ 35A, 10 | 28 nC @ 10 V | ±20V | 2100 pF @ 75 V | 125W (Tc) | PG-TDSON-8-7 | - | 70A (Tc) | 4.6V @ 91µA | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 100 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 7mOhm @ 40A, 10V | 20 nC @ 4.5 V | ±20V | 2700 pF @ 50 V | 83W (Tc) | PG-TDSON-8-6 | - | 79A (Tc) | 2.3V @ 49µA | ||
 | 联系我们 | 100 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 3.4mOhm @ 20A, 10V | 53 nC @ 10 V | ±20V | 3500 pF @ 30 V | 2.5W (Ta), 83W (Tc) | PG-TSDSON-8-26 | - | 19A (Ta), 112A (Tc) | 2.3V @ 36µA | ||
 | 联系我们 | 11,964 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 100 V | -55°C ~ 175°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 14.6 nC @ 4.5 V | ±20V | 2100 pF @ 50 V | 3W (Ta), 83W (Tc) | PG-TDSON-8-6 | - | 40A (Tc) | 2.3V @ 36µA | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 30 V | -55°C ~ 150°C (TJ) | - | 6-PowerVDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 21.5 nC @ 10 V | ±16V | 1400 pF @ 15 V | 11W (Tc) | PG-VSON-6-1 | - | 44A (Tc) | 2V @ 250µA | ||
| 联系我们 | 16,816 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 80 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 55 nC @ 4.5 V | ±20V | 7500 pF @ 40 V | 2.5W (Ta), 156W (Tc) | PG-TDSON-8-7 | - | 100A (Tc) | 2.3V @ 115µA | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 100 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 15 nC @ 4.5 V | ±20V | 2100 pF @ 50 V | 2.1W (Ta), 69W (Tc) | PG-TDSON-8 FL | - | 11A (Ta), 40A (Tc) | 2.3V @ 36µA | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 80 V | -55°C ~ 175°C (TJ) | - | 8-PowerSMD, Gull Wing | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 6V, 10V | 1.1mOhm @ 150A, 10V | 223 nC @ 10 V | ±20V | 17000 pF @ 40 V | 3.8W (Ta), 375W (Tc) | PG-HSOG-8-1 | - | 42A (Ta), 408A (Tc) | 3.8V @ 280µA | ||
 | 联系我们 | 1,515 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 80 V | -55°C ~ 175°C (TJ) | - | 16-PowerSOP Module | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 6V, 10V | 1.1mOhm @ 100A, 10V | 231 nC @ 10 V | ±20V | 16250 pF @ 40 V | 375W (Tc) | PG-HDSOP-16-2 | - | 300A (Tj) | 3.8V @ 275µA | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 25 V | -55°C ~ 150°C (TJ) | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 4.5V, 10V | 900mOhm @ 20A, 10V | 124 nC @ 10 V | ±16V | 5500 pF @ 12 V | 2.1W (Ta), 69W (Tc) | PG-TSDSON-8-FL | - | 39A (Ta), 40A (Tc) | 2V @ 250µA |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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