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MegaMOS™ Series, 单 FET，MOSFET
结果:
30
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
结果：30
搜索条目:
MegaMOS™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Supplier Device Package | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
.jpg "IXTH50N20") | 1+ ¥59.4000 5+ ¥56.1000 10+ ¥52.8000 更多的价格 | 340 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 50A (Tc) | 4V @ 250µA | MegaMOS™ | 200 V | 10V | 45mOhm @ 25A, 10V | 220 nC @ 10 V | ±20V | 4600 pF @ 25 V | 300W (Tc) | - | ||
| 1+ ¥144.0000 5+ ¥136.0000 10+ ¥128.0000 更多的价格 | 240 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 20A (Tc) | 4.5V @ 250µA | MegaMOS™ | 600 V | 10V | 350mOhm @ 10A, 10V | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | 300W (Tc) | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 40A (Tc) | 4V @ 250µA | MegaMOS™ | 300 V | 10V | 85mOhm @ 500mA, 10V | 220 nC @ 10 V | ±20V | 4600 pF @ 25 V | 300W (Tc) | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 12A (Tc) | 4.5V @ 250µA | MegaMOS™ | 900 V | 10V | 900mOhm @ 6A, 10V | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | 300W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | TO-264 (IXTK) | - | MOSFET (Metal Oxide) | - | 80A (Tc) | 4V @ 250µA | MegaMOS™ | 250 V | 10V | 33mOhm @ 500mA, 10V | 240 nC @ 10 V | ±20V | 6000 pF @ 25 V | 540W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | TO-264 (IXTK) | - | MOSFET (Metal Oxide) | - | 90A (Tc) | 4V @ 250µA | MegaMOS™ | 150 V | 10V | 16mOhm @ 45A, 10V | 240 nC @ 10 V | ±20V | 6400 pF @ 25 V | 390W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | TO-264 (IXTK) | - | MOSFET (Metal Oxide) | - | 180A (Tc) | 4V @ 250µA | MegaMOS™ | 150 V | 10V | 9mOhm @ 500mA, 10V | 240 nC @ 10 V | ±20V | 7000 pF @ 25 V | 730W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | TO-264 (IXTK) | - | MOSFET (Metal Oxide) | - | 160A (Tc) | 4V @ 250µA | MegaMOS™ | 200 V | 10V | 13mOhm @ 500mA, 10V | 415 nC @ 10 V | ±20V | 12900 pF @ 25 V | 730W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | TO-264 (IXTK) | - | MOSFET (Metal Oxide) | - | 128A (Tc) | 4V @ 250µA | MegaMOS™ | 150 V | 10V | 15mOhm @ 500mA, 10V | 240 nC @ 10 V | ±20V | 6000 pF @ 25 V | 540W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | TO-264 (IXTK) | - | MOSFET (Metal Oxide) | - | 120A (Tc) | 4V @ 250µA | MegaMOS™ | 250 V | 10V | 20mOhm @ 500mA, 10V | 360 nC @ 10 V | ±20V | 7700 pF @ 25 V | 730W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | TO-264 (IXTK) | - | MOSFET (Metal Oxide) | - | 110A (Tc) | 4V @ 250µA | MegaMOS™ | 300 V | 10V | 26mOhm @ 500mA, 10V | 390 nC @ 10 V | ±20V | 7800 pF @ 25 V | 730W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 30A (Tc) | 4V @ 250µA | MegaMOS™ | 500 V | 10V | 170mOhm @ 500mA, 10V | 227 nC @ 10 V | ±20V | 5680 pF @ 25 V | 360W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 14A (Tc) | 4.5V @ 250µA | MegaMOS™ | 1000 V | 10V | 820mOhm @ 500mA, 10V | 195 nC @ 10 V | ±20V | 5650 pF @ 25 V | 360W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 14A (Tc) | 4.5V @ 250µA | MegaMOS™ | 800 V | 10V | 700mOhm @ 500mA, 10V | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | 300W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 13A (Tc) | 4.5V @ 250µA | MegaMOS™ | 800 V | 10V | 800mOhm @ 500mA, 10V | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | 300W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 12A (Tc) | 4.5V @ 250µA | MegaMOS™ | 1000 V | 10V | 1.05Ohm @ 6A, 10V | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | 300W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | ISOPLUS220™ | ISOPLUS220™ | - | MOSFET (Metal Oxide) | - | 72A (Tc) | 4V @ 250µA | MegaMOS™ | 100 V | 10V | 20mOhm @ 37.5A, 10V | 260 nC @ 10 V | ±20V | 4500 pF @ 25 V | 230W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247AD | - | MOSFET (Metal Oxide) | - | 24A (Tc) | 4V @ 250µA | MegaMOS™ | 500 V | 10V | 230mOhm @ 12A, 10V | 190 nC @ 10 V | ±20V | 4200 pF @ 25 V | 300W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | SOT-227B | - | MOSFET (Metal Oxide) | - | 21A (Tc) | 4.5V @ 500µA | MegaMOS™ | 1000 V | 10V | 550mOhm @ 500mA, 10V | 250 nC @ 10 V | ±20V | 8400 pF @ 25 V | 520W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | - | MOSFET (Metal Oxide) | - | 13A (Tc) | 4.5V @ 250µA | MegaMOS™ | 1100 V | 10V | 920mOhm @ 500mA, 10V | 195 nC @ 10 V | ±20V | 5650 pF @ 25 V | 360W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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