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MDmesh™ M6 Series, 单 FET，MOSFET
结果:
68
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Mounting Type
Vgs (Max)
FET Feature
Grade
Qualification
Technology
结果：68
搜索条目:
MDmesh™ M6
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Package / Case | Qualification |
|---|
 | 1+ ¥22.5000 5+ ¥21.2500 10+ ¥20.0000 更多的价格 | 42,650 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 30A (Tc) | MDmesh™ M6 | 600 V | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | 230W (Tc) | TOLL (HV) | 8-PowerSFN | - | ||
 | 1+ ¥23.0400 5+ ¥21.7600 10+ ¥20.4800 更多的价格 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 30A (Tc) | MDmesh™ M6 | 600 V | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | 208W (Tc) | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | ||
 | 1+ ¥7.2000 5+ ¥6.8000 10+ ¥6.4000 更多的价格 | 4,335 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 7A (Tc) | MDmesh™ M6 | 600 V | 10V | 415mOhm @ 3.5A, 10V | 4.75V @ 250µA | 13 nC @ 10 V | ±25V | 509 pF @ 100 V | 52W (Tc) | PowerFlat™ (5x6) HV | 8-PowerVDFN | - | ||
 | 1+ ¥90.0000 5+ ¥85.0000 10+ ¥80.0000 更多的价格 | 3,300 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 25A (Tc) | MDmesh™ M6 | 600 V | 10V | 128mOhm @ 12.5A, 10V | 4.75V @ 250µA | 35 nC @ 10 V | ±25V | 1500 pF @ 100 V | 190W (Tc) | TO-220 | TO-220-3 | - | ||
| 1+ ¥54.0000 5+ ¥51.0000 10+ ¥48.0000 更多的价格 | 2,740 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 30A (Tc) | MDmesh™ M6 | 600 V | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | 208W (Tc) | TO-220 | TO-220-3 | - | ||
 | 1+ ¥160.2000 5+ ¥151.3000 10+ ¥142.4000 更多的价格 | 1,520 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 72A (Tc) | MDmesh™ M6 | 600 V | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106 nC @ 10 V | ±25V | 4850 pF @ 100 V | 446W (Tc) | TO-247-4 | TO-247-4 | - | ||
 | 1+ ¥270.0000 5+ ¥255.0000 10+ ¥240.0000 更多的价格 | 1,200 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 30A (Tc) | MDmesh™ M6 | 600 V | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | 208W (Tc) | TO-247-3 | TO-247-3 | - | ||
 | 1+ ¥243.0000 5+ ¥229.5000 10+ ¥216.0000 更多的价格 | 1,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 17A (Tj) | MDmesh™ M6 | 600 V | 10V | 190mOhm @ 8.5A, 10V | 4.75V @ 250µA | 23 nC @ 10 V | ±25V | 960 pF @ 100 V | 30W (Tc) | TO-220FP | TO-220-3 Full Pack | - | ||
| 1+ ¥99.0000 5+ ¥93.5000 10+ ¥88.0000 更多的价格 | 800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 13A (Tc) | MDmesh™ M6 | 600 V | 10V | 280mOhm @ 6.5A, 10V | 4.75V @ 250µA | 16.8 nC @ 10 V | ±25V | 650 pF @ 100 V | 110W (Tc) | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | ||
 | 1+ ¥144.0000 5+ ¥136.0000 10+ ¥128.0000 更多的价格 | 695 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 31A (Tc) | MDmesh™ M6 | 600 V | 10V | 80mOhm @ 15.5A, 10V | 4.75V @ 250µA | 57 nC @ 10 V | ±25V | - | 189W (Tc) | PowerFlat™ (8x8) HV | 8-PowerVDFN | - | ||
| 1+ ¥54.0000 5+ ¥51.0000 10+ ¥48.0000 更多的价格 | 659 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 30A (Tc) | MDmesh™ M6 | 600 V | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | 40W (Tc) | TO-220FP | TO-220-3 Full Pack | - | ||
| 1+ ¥61.1802 5+ ¥57.7813 10+ ¥54.3824 更多的价格 | 356 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 25A (Tc) | MDmesh™ M6 | 600 V | 10V | 128mOhm @ 12.5A, 10V | 4.75V @ 250µA | 35 nC @ 10 V | ±25V | 1500 pF @ 100 V | 190W (Tc) | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | ||
| 1+ ¥54.0000 5+ ¥51.0000 10+ ¥48.0000 更多的价格 | 100 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 34A (Tc) | MDmesh™ M6 | 600 V | 10V | 54mOhm @ 26A, 10V | 4.75V @ 250µA | 72.5 nC @ 10 V | ±25V | 3400 pF @ 100 V | 150W (Tc) | TOLL (HV) | 8-PowerSFN | - | ||
 | 1+ ¥90.0000 5+ ¥85.0000 10+ ¥80.0000 更多的价格 | 30 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 63A (Tc) | MDmesh™ M6 | 600 V | 0V, 10V | 41mOhm @ 31.5A, 10V | 4.75V @ 250µA | 106 nC @ 10 V | ±25V | 4360 pF @ 100 V | 390W (Tc) | TO-247-3 | TO-247-3 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 25A (Tc) | MDmesh™ M6 | 600 V | 10V | 125mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4 nC @ 10 V | ±25V | 1515 pF @ 100 V | 190W (Tc) | TO-262 (I2PAK) | TO-262-3 Long Leads, I²Pak, TO-262AA | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 3.5A (Tc) | MDmesh™ M6 | 650 V | 10V | 1.5Ohm @ 1.75A, 10V | 3.75V @ 250µA | 6 nC @ 10 V | ±25V | 150 pF @ 100 V | 45W (Tc) | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 5.5A (Tc) | MDmesh™ M6 | 600 V | 10V | 660mOhm @ 2.75A, 10V | 4.75V @ 250µA | 8.8 nC @ 10 V | ±25V | 338 pF @ 100 V | 48W (Tc) | PowerFlat™ (5x6) HV | 8-PowerVDFN | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 17A (Tj) | MDmesh™ M6 | 600 V | 10V | 190mOhm @ 8.5A, 10V | 4.75V @ 250µA | 23 nC @ 10 V | ±25V | 960 pF @ 100 V | 130W (Tc) | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 17A (Tj) | MDmesh™ M6 | 600 V | 10V | 190mOhm @ 8.5A, 10V | 4.75V @ 250µA | 23 nC @ 10 V | ±25V | 960 pF @ 100 V | 130W (Tc) | TO-220 | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | - | 13A (Tc) | MDmesh™ M6 | 600 V | 10V | 280mOhm @ 6.5A, 10V | 4.75V @ 250µA | 16.8 nC @ 10 V | ±25V | 650 pF @ 100 V | 25W (Tc) | TO-220FP | TO-220-3 Full Pack | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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