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MDmesh™ M2 Series, 单 FET，MOSFET
结果:
82
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Operating Temperature
Drain to Source Voltage (Vdss)
Grade
Mounting Type
Qualification
Vgs (Max)
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果：82
搜索条目:
MDmesh™ M2
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Series | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ ¥32.4000 5+ ¥30.6000 10+ ¥28.8000 更多的价格 | 40,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 650 V | - | MOSFET (Metal Oxide) | - | 28A (Tc) | 5V @ 250µA | MDmesh™ M2 | 10V | 110mOhm @ 14A, 10V | 54 nC @ 10 V | ±25V | 2400 pF @ 100 V | 210W (Tc) | - | ||
 | 1+ ¥90.0000 5+ ¥85.0000 10+ ¥80.0000 更多的价格 | 18,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 8-PowerVDFN | PowerFlat™ (5x6) HV | 600 V | - | MOSFET (Metal Oxide) | - | 6.5A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 495mOhm @ 4.5A, 10V | 16 nC @ 10 V | ±25V | 538 pF @ 100 V | 52W (Tc) | - | ||
 | 1+ ¥51.3000 5+ ¥48.4500 10+ ¥45.6000 更多的价格 | 10,708 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | 150°C (TJ) | N-Channel | TO-247-3 | TO-247-3 | 600 V | - | MOSFET (Metal Oxide) | - | 52A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 55mOhm @ 26A, 10V | 91 nC @ 10 V | ±25V | 3750 pF @ 100 V | 350W (Tc) | - | ||
| 1+ ¥9.0000 5+ ¥8.5000 10+ ¥8.0000 更多的价格 | 10,387 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 150°C (TJ) | N-Channel | 8-PowerVDFN | PowerFlat™ (5x6) HV | 600 V | - | MOSFET (Metal Oxide) | - | 8A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 355mOhm @ 4A, 10V | 19 nC @ 10 V | ±25V | 704 pF @ 100 V | 52W (Tc) | - | ||
 | 1+ ¥8.4600 5+ ¥7.9900 10+ ¥7.5200 更多的价格 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | - | N-Channel | TO-220-3 | TO-220 | 600 V | - | MOSFET (Metal Oxide) | - | 20A (Tc) | - | MDmesh™ M2 | 10V | - | - | ±25V | - | 169W (Tc) | - | ||
| 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 9,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247-3 | 600 V | - | MOSFET (Metal Oxide) | - | 42A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 70mOhm @ 21A, 10V | 70 nC @ 10 V | ±25V | 3060 pF @ 100 V | 300W (Tc) | - | ||
 | 1+ ¥23.4000 5+ ¥22.1000 10+ ¥20.8000 更多的价格 | 6,471 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | 150°C (TJ) | N-Channel | TO-247-4 | TO-247-4 | 600 V | - | MOSFET (Metal Oxide) | - | 42A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 70mOhm @ 21A, 10V | 70 nC @ 10 V | ±25V | 3060 pF @ 100 V | 300W (Tc) | - | ||
| 1+ ¥3.9600 5+ ¥3.7400 10+ ¥3.5200 更多的价格 | 5,600 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 650 V | - | MOSFET (Metal Oxide) | - | 2.3A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 1.8Ohm @ 1A, 10V | 5 nC @ 10 V | ±25V | 155 pF @ 100 V | 22W (Tc) | - | ||
 | 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 5,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220FP | 650 V | - | MOSFET (Metal Oxide) | - | 24A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 140mOhm @ 12A, 10V | 41.5 nC @ 10 V | ±25V | 1790 pF @ 100 V | 34W (Tc) | - | ||
 | 1+ ¥9.0000 5+ ¥8.5000 10+ ¥8.0000 更多的价格 | 5,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | 500 V | Automotive | MOSFET (Metal Oxide) | - | 10A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 380mOhm @ 5A, 10V | 13 nC @ 10 V | ±30V | 530 pF @ 100 V | 85W (Tc) | AEC-Q101 | ||
.jpg "STD12N60M2") | 1+ ¥90.0000 5+ ¥85.0000 10+ ¥80.0000 更多的价格 | 5,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 600 V | - | MOSFET (Metal Oxide) | - | 9A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 450mOhm @ 4.5A, 10V | 16 nC @ 10 V | ±25V | 538 pF @ 100 V | 85W (Tc) | - | ||
| 1+ ¥12.6000 5+ ¥11.9000 10+ ¥11.2000 更多的价格 | 4,057 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 600 V | - | MOSFET (Metal Oxide) | - | 12A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 320mOhm @ 6A, 10V | 19 nC @ 10 V | ±25V | 700 pF @ 100 V | 110W (Tc) | - | ||
 | 1+ ¥18.0000 5+ ¥17.0000 10+ ¥16.0000 更多的价格 | 4,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 650 V | - | MOSFET (Metal Oxide) | - | 20A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 180mOhm @ 10A, 10V | 35 nC @ 10 V | ±25V | 1440 pF @ 100 V | 170W (Tc) | - | ||
| 1+ ¥32.4000 5+ ¥30.6000 10+ ¥28.8000 更多的价格 | 3,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 150°C (TJ) | N-Channel | 8-PowerVDFN | PowerFlat™ (5x6) HV | 650 V | - | MOSFET (Metal Oxide) | - | 8A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 365mOhm @ 4A, 10V | 21.5 nC @ 10 V | ±25V | 764 pF @ 100 V | 57W (Tc) | - | ||
| 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 2,874 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 600 V | - | MOSFET (Metal Oxide) | - | 20A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 165mOhm @ 10A, 10V | 34 nC @ 10 V | ±25V | 1360 pF @ 100 V | 169W (Tc) | - | ||
 | 1+ ¥18.0000 5+ ¥17.0000 10+ ¥16.0000 更多的价格 | 2,215 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | 150°C (TJ) | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 650 V | - | MOSFET (Metal Oxide) | - | 12A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 330mOhm @ 6A, 10V | 20 nC @ 10 V | ±25V | 770 pF @ 100 V | 110W (Tc) | - | ||
 | 1+ ¥54.0000 5+ ¥51.0000 10+ ¥48.0000 更多的价格 | 1,820 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220 | 650 V | - | MOSFET (Metal Oxide) | - | 16A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 230mOhm @ 8A, 10V | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | 150W (Tc) | - | ||
| 1+ ¥70.7400 5+ ¥66.8100 10+ ¥62.8800 更多的价格 | 1,818 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | 150°C (TJ) | N-Channel | TO-220-3 Full Pack | TO-220FP | 650 V | - | MOSFET (Metal Oxide) | - | 32A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 99mOhm @ 16A, 10V | 56.5 nC @ 10 V | ±25V | 2355 pF @ 100 V | 25W (Tc) | - | ||
| 1+ ¥10.8133 5+ ¥10.2126 10+ ¥9.6118 更多的价格 | 1,768 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 650 V | - | MOSFET (Metal Oxide) | - | 11A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 360mOhm @ 5.5A, 10V | 19.5 nC @ 10 V | ±25V | 718 pF @ 100 V | 110W (Tc) | - | ||
| 1+ ¥12.6000 5+ ¥11.9000 10+ ¥11.2000 更多的价格 | 1,735 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 650 V | - | MOSFET (Metal Oxide) | - | 8A (Tc) | 4V @ 250µA | MDmesh™ M2 | 10V | 500mOhm @ 4A, 10V | 16.5 nC @ 10 V | ±25V | 535 pF @ 100 V | 85W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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