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MDmesh™ II Series, 单 FET，MOSFET
结果:
213
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果：213
搜索条目:
MDmesh™ II
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Package / Case | FET Type | Operating Temperature | Supplier Device Package | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ ¥10.8000 5+ ¥10.2000 10+ ¥9.6000 更多的价格 | 60,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | N-Channel | 150°C (TJ) | TO-220 | - | MOSFET (Metal Oxide) | - | 20A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 165mOhm @ 10A, 10V | 60 nC @ 10 V | ±30V | 1800 pF @ 50 V | 140W (Tc) | - | ||
 | 1+ ¥7.5600 5+ ¥7.1400 10+ ¥6.7200 更多的价格 | 36,367 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | -55°C ~ 150°C (TJ) | TO-220FP | - | MOSFET (Metal Oxide) | - | 17A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 190mOhm @ 8A, 10V | 46 nC @ 10 V | ±30V | 1400 pF @ 50 V | 30W (Tc) | - | ||
.jpg "STD9NM50N") | 1+ ¥5.4000 5+ ¥5.1000 10+ ¥4.8000 更多的价格 | 36,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | 150°C (TJ) | DPAK | - | MOSFET (Metal Oxide) | - | 5A (Tc) | 4V @ 250µA | MDmesh™ II | 500 V | 10V | 790mOhm @ 2.5A, 10V | 14 nC @ 10 V | ±25V | 570 pF @ 50 V | 45W (Tc) | - | ||
 | 1+ ¥3.2400 5+ ¥3.0600 10+ ¥2.8800 更多的价格 | 34,946 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | 150°C (TJ) | TO-220FP | - | MOSFET (Metal Oxide) | - | 6.5A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 745mOhm @ 3.25A, 10V | 17.4 nC @ 10 V | ±25V | 452 pF @ 50 V | 25W (Tc) | - | ||
| 1+ ¥13.5000 5+ ¥12.7500 10+ ¥12.0000 更多的价格 | 31,999 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | 150°C (TJ) | DPAK | - | MOSFET (Metal Oxide) | - | 5A (Tc) | 4V @ 250µA | MDmesh™ II | 500 V | 10V | 790mOhm @ 2.5A, 10V | 14 nC @ 10 V | ±25V | 364 pF @ 50 V | 45W (Tc) | - | ||
| 1+ ¥4.8240 5+ ¥4.5560 10+ ¥4.2880 更多的价格 | 31,845 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | -55°C ~ 150°C (TJ) | TO-220FP | - | MOSFET (Metal Oxide) | - | 11A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 360mOhm @ 5.5A, 10V | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | 25W (Tc) | - | ||
| 1+ ¥6.8400 5+ ¥6.4600 10+ ¥6.0800 更多的价格 | 30,297 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | 150°C (TJ) | DPAK | Automotive | MOSFET (Metal Oxide) | - | 5A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 900mOhm @ 2.5A, 10V | 14 nC @ 10 V | ±25V | 363 pF @ 50 V | 45W (Tc) | AEC-Q101 | ||
 | 1+ ¥30.6000 5+ ¥28.9000 10+ ¥27.2000 更多的价格 | 30,222 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-247-3 | N-Channel | 150°C (TJ) | TO-247-3 | - | MOSFET (Metal Oxide) | - | 44A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 70mOhm @ 20A, 10V | 124 nC @ 10 V | ±25V | 4285 pF @ 50 V | 330W (Tc) | - | ||
| 1+ ¥8.8200 5+ ¥8.3300 10+ ¥7.8400 更多的价格 | 20,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | 150°C (TJ) | TO-220FP | - | MOSFET (Metal Oxide) | - | 20A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 165mOhm @ 10A, 10V | 60 nC @ 10 V | ±30V | 1800 pF @ 50 V | 35W (Tc) | - | ||
| 1+ ¥8.1000 5+ ¥7.6500 10+ ¥7.2000 更多的价格 | 15,800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | -55°C ~ 150°C (TJ) | TO-220FP | - | MOSFET (Metal Oxide) | - | 16A (Tc) | 4V @ 100µA | MDmesh™ II | 600 V | 10V | 220mOhm @ 8A, 10V | 44 nC @ 10 V | ±30V | 1300 pF @ 50 V | 30W (Tc) | - | ||
 | 1+ ¥18.0000 5+ ¥17.0000 10+ ¥16.0000 更多的价格 | 15,566 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | 150°C (TJ) | TO-263 (D2Pak) | - | MOSFET (Metal Oxide) | - | 22A (Tc) | 4V @ 250µA | MDmesh™ II | 500 V | 10V | 130mOhm @ 11A, 10V | 62.5 nC @ 10 V | ±25V | 1973 pF @ 50 V | 190W (Tc) | - | ||
| 1+ ¥4.5000 5+ ¥4.2500 10+ ¥4.0000 更多的价格 | 12,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | -55°C ~ 150°C (TJ) | TO-220FP | - | MOSFET (Metal Oxide) | - | 10A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 550mOhm @ 4A, 10V | 19 nC @ 10 V | ±25V | 540 pF @ 50 V | 25W (Tc) | - | ||
| 1+ ¥7.2000 5+ ¥6.8000 10+ ¥6.4000 更多的价格 | 10,441 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | 150°C (TJ) | TO-220FP | - | MOSFET (Metal Oxide) | - | 14A (Tc) | 4V @ 250µA | MDmesh™ II | 500 V | 10V | 250mOhm @ 7A, 10V | 34 nC @ 10 V | ±25V | 1000 pF @ 50 V | 30W (Tc) | - | ||
| 1+ ¥9.0900 5+ ¥8.5850 10+ ¥8.0800 更多的价格 | 8,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-247-3 | N-Channel | 150°C (TJ) | TO-247-3 | - | MOSFET (Metal Oxide) | - | 20A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 165mOhm @ 10A, 10V | 60 nC @ 10 V | ±30V | 1800 pF @ 50 V | 140W (Tc) | - | ||
| 1+ ¥8.6400 5+ ¥8.1600 10+ ¥7.6800 更多的价格 | 7,500 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | 150°C (TJ) | DPAK | - | MOSFET (Metal Oxide) | - | 11A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 360mOhm @ 5.5A, 10V | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | 90W (Tc) | - | ||
 | 1+ ¥9.0000 5+ ¥8.5000 10+ ¥8.0000 更多的价格 | 6,570 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | 150°C (TJ) | D2PAK | - | MOSFET (Metal Oxide) | - | 19A (Tc) | 4V @ 250µA | MDmesh™ II | 650 V | 10V | 190mOhm @ 9.5A, 10V | 70 nC @ 10 V | ±25V | 2500 pF @ 50 V | 160W (Tc) | - | ||
| 1+ ¥48.6000 5+ ¥45.9000 10+ ¥43.2000 更多的价格 | 6,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | 150°C (TJ) | TO-220FP | - | MOSFET (Metal Oxide) | - | 17A (Tc) | 4V @ 250µA | MDmesh™ II | 500 V | 10V | 190mOhm @ 8.5A, 10V | 45 nC @ 10 V | ±25V | 1330 pF @ 50 V | 30W (Tc) | - | ||
| 1+ ¥45.0000 5+ ¥42.5000 10+ ¥40.0000 更多的价格 | 5,490 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | N-Channel | -55°C ~ 150°C (TJ) | TO-220 | - | MOSFET (Metal Oxide) | - | 13A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 285mOhm @ 6.5A, 10V | 35 nC @ 10 V | ±25V | 1000 pF @ 50 V | 110W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-262-3 Full Pack, I²Pak | N-Channel | 150°C (TJ) | I2PAKFP (TO-281) | MOSFET (Metal Oxide) | - | 11A (Tc) | 4V @ 250µA | MDmesh™ II | 650 V | 10V | 455mOhm @ 5.5A, 10V | 29 nC @ 10 V | ±25V | 800 pF @ 50 V | 25W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | -55°C ~ 150°C (TJ) | I2PAK | - | MOSFET (Metal Oxide) | - | 11A (Tc) | 4V @ 250µA | MDmesh™ II | 600 V | 10V | 360mOhm @ 5.5A, 10V | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | 90W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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