HiPerFET™, Ultra X3 Series, 单 FET,MOSFET

结果:
111
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Power Dissipation (Max)
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Operating Temperature
FET Type
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
结果111
搜索条目:
HiPerFET™, Ultra X3
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypePackage / CaseGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXFA90N20X3
MOSFET N-CH 200V 90A TO263AA
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
数量
50,105 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
90A (Tc)
10V
12.8mOhm @ 45A, 10V
4.5V @ 1.5mA
78 nC @ 10 V
±20V
5420 pF @ 25 V
390W (Tc)
TO-263AA (IXFA)
-
IXFY36N20X3
MOSFET N-CH 200V 36A TO252AA
1+
¥31.5000
5+
¥29.7500
10+
¥28.0000
数量
6,051 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
36A (Tc)
10V
45mOhm @ 18A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1425 pF @ 25 V
176W (Tc)
TO-252AA
-
IXFH60N60X3
MOSFET ULTRA JCT 600V 60A TO247
1+
¥70.2000
5+
¥66.3000
10+
¥62.4000
数量
5,570 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
600 V
60A (Tc)
10V
51mOhm @ 30A, 10V
5V @ 4mA
51 nC @ 10 V
±20V
3450 pF @ 25 V
625W (Tc)
TO-247
-
IXFH170N25X3
MOSFET N-CH 250V 170A TO247
1+
¥108.0000
5+
¥102.0000
10+
¥96.0000
数量
5,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
170A (Tc)
10V
7.4mOhm @ 85A, 10V
4.5V @ 4mA
190 nC @ 10 V
±20V
13500 pF @ 25 V
960W (Tc)
TO-247 (IXTH)
-
IXFT150N30X3HV
MOSFET N-CH 300V 150A TO268HV
1+
¥1296.0000
5+
¥1224.0000
10+
¥1152.0000
数量
3,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
150A (Tc)
10V
8.3mOhm @ 75A, 10V
4.5V @ 4mA
254 nC @ 10 V
±20V
13100 pF @ 25 V
890W (Tc)
TO-268HV (IXFT)
-
IXFP30N25X3M
MOSFET N-CH 250V 30A TO220
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
数量
2,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
30A (Tc)
10V
60mOhm @ 15A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1450 pF @ 25 V
36W (Tc)
TO-220 Isolated Tab
-
IXFY26N30X3
MOSFET N-CH 300V 26A TO252AA
1+
¥81.0000
5+
¥76.5000
10+
¥72.0000
数量
1,959 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
26A (Tc)
10V
66mOhm @ 13A, 10V
4.5V @ 500µA
22 nC @ 10 V
±20V
1465 pF @ 25 V
170W (Tc)
TO-252AA
-
IXFP80N25X3
MOSFET N-CH 250V 80A TO220AB
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
数量
1,828 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
80A (Tc)
10V
16mOhm @ 40A, 10V
4.5V @ 1.5mA
83 nC @ 10 V
±20V
5430 pF @ 25 V
390W (Tc)
TO-220-3
-
IXFA80N25X3-TRL
MOSFET N-CH 250V 80A TO263
1+
¥43.2000
5+
¥40.8000
10+
¥38.4000
数量
1,174 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
80A (Tc)
10V
16mOhm @ 40A, 10V
4.5V @ 1.5mA
83 nC @ 10 V
±20V
5430 pF @ 25 V
390W (Tc)
TO-263 (D2Pak)
-
IXFQ120N25X3
MOSFET N-CHANNEL 250V 120A TO3P
1+
¥223.2000
5+
¥210.8000
10+
¥198.4000
数量
1,066 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
120A (Tc)
10V
12mOhm @ 60A, 10V
4.5V @ 4mA
122 nC @ 10 V
±20V
7870 pF @ 25 V
520W (Tc)
TO-3P
-
IXFP50N20X3
DISCMSFT NCHULTRJNCTX3CLASS TO-2
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
数量
1,050 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
50A (Tc)
10V
30mOhm @ 25A, 10V
4.5V @ 1mA
33 nC @ 10 V
±20V
2100 pF @ 25 V
240W (Tc)
TO-220-3 (IXFP)
-
IXFT220N20X3HV
MOSFET N-CH 200V 220A TO268HV
1+
¥215.1625
5+
¥203.2090
10+
¥191.2555
数量
900 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
220A (Tc)
10V
6.2mOhm @ 110A, 10V
4.5V @ 4mA
204 nC @ 10 V
±20V
13600 pF @ 25 V
960W (Tc)
TO-268HV (IXFT)
-
IXFP36N20X3
MOSFET N-CH 200V 36A TO220
1+
¥36.0000
5+
¥34.0000
10+
¥32.0000
数量
885 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
36A (Tc)
10V
45mOhm @ 18A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1425 pF @ 25 V
176W (Tc)
TO-220-3
-
IXFP60N25X3
MOSFET N-CH 250V 60A TO220AB
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
数量
600 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
60A (Tc)
10V
23mOhm @ 30A, 10V
4.5V @ 1.5mA
50 nC @ 10 V
±20V
3610 pF @ 25 V
320W (Tc)
TO-220AB (IXFP)
-
IXFT120N30X3HV
MOSFET N-CH 300V 120A TO268HV
1+
¥178.2000
5+
¥168.3000
10+
¥158.4000
数量
524 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
120A (Tc)
10V
11mOhm @ 60A, 10V
4.5V @ 4mA
170 nC @ 10 V
±20V
10500 pF @ 25 V
735W (Tc)
TO-268HV (IXFT)
-
IXFP56N30X3
MOSFET N-CH 300V 56A TO220AB
1+
¥118.1700
5+
¥111.6050
10+
¥105.0400
数量
300 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
56A (Tc)
10V
27mOhm @ 28A, 10V
4.5V @ 1.5mA
56 nC @ 10 V
±20V
3750 pF @ 25 V
320W (Tc)
TO-220-3
-
IXFA80N25X3
MOSFET N-CH 250V 80A TO263AA
1+
¥39.6000
5+
¥37.4000
10+
¥35.2000
数量
230 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
80A (Tc)
10V
16mOhm @ 40A, 10V
4.5V @ 1.5mA
83 nC @ 10 V
±20V
5430 pF @ 25 V
390W (Tc)
TO-263 (D2Pak)
-
IXFP36N20X3M
MOSFET N-CH 200V 36A TO220
1+
¥46.0800
5+
¥43.5200
10+
¥40.9600
数量
160 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
36A (Tc)
10V
45mOhm @ 18A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1425 pF @ 25 V
36W (Tc)
TO-220 Isolated Tab
-
IXFK170N25X3
MOSFET N-CH 250V 170A TO264
1+
¥270.0000
5+
¥255.0000
10+
¥240.0000
数量
150 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
170A (Tc)
10V
7.4mOhm @ 85A, 10V
4.5V @ 4mA
190 nC @ 10 V
±20V
13500 pF @ 25 V
960W (Tc)
TO-264AA
-
IXFH150N30X3
MOSFET N-CH 300V 150A TO247
1+
¥234.0000
5+
¥221.0000
10+
¥208.0000
数量
123 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
150A (Tc)
10V
8.3mOhm @ 75A, 10V
4.5V @ 4mA
177 nC @ 10 V
±20V
13100 pF @ 25 V
890W (Tc)
TO-247 (IXTH)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。