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HiPerFET™, Ultra X2 Series, 单 FET，MOSFET
结果:
45
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Current - Continuous Drain (Id) @ 25°C
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
结果：45
搜索条目:
HiPerFET™, Ultra X2
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ ¥25.2000 5+ ¥23.8000 10+ ¥22.4000 更多的价格 | 18,620 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | 650 V | - | MOSFET (Metal Oxide) | - | 34A (Tc) | HiPerFET™, Ultra X2 | 10V | 105mOhm @ 17A, 10V | 5.5V @ 2.5mA | 56 nC @ 10 V | ±30V | 3330 pF @ 25 V | 540W (Tc) | - | ||
| 1+ ¥135.0000 5+ ¥127.5000 10+ ¥120.0000 更多的价格 | 15,892 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | 650 V | - | MOSFET (Metal Oxide) | - | 60A (Tc) | HiPerFET™, Ultra X2 | 10V | 52mOhm @ 30A, 10V | 5.5V @ 4mA | 107 nC @ 10 V | ±30V | 6180 pF @ 25 V | 780W (Tc) | - | ||
 | 1+ ¥90.0000 5+ ¥85.0000 10+ ¥80.0000 更多的价格 | 9,923 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220-3 | 650 V | - | MOSFET (Metal Oxide) | - | 34A (Tc) | HiPerFET™, Ultra X2 | 10V | 105mOhm @ 17A, 10V | 5.5V @ 2.5mA | 56 nC @ 10 V | ±30V | 3330 pF @ 25 V | 540W (Tc) | - | ||
 | 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 6,400 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263HV | 650 V | - | MOSFET (Metal Oxide) | - | 22A (Tc) | HiPerFET™, Ultra X2 | 10V | 160mOhm @ 11A, 10V | 5.5V @ 1.5mA | 38 nC @ 10 V | ±30V | 2310 pF @ 25 V | 390W (Tc) | - | ||
| 1+ ¥39.6000 5+ ¥37.4000 10+ ¥35.2000 更多的价格 | 2,438 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXTH) | 650 V | - | MOSFET (Metal Oxide) | - | 80A (Tc) | HiPerFET™, Ultra X2 | 10V | 40mOhm @ 40A, 10V | 5.5V @ 4mA | 143 nC @ 10 V | ±30V | 8245 pF @ 25 V | 890W (Tc) | - | ||
| 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 2,304 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 650 V | - | MOSFET (Metal Oxide) | - | 22A (Tc) | HiPerFET™, Ultra X2 | 10V | 145mOhm @ 11A, 10V | 5V @ 1.5mA | 37 nC @ 10 V | ±30V | 2190 pF @ 25 V | 390W (Tc) | - | ||
 | 1+ ¥30.6000 5+ ¥28.9000 10+ ¥27.2000 更多的价格 | 2,300 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack, Isolated Tab | TO-220 Isolated Tab | 650 V | - | MOSFET (Metal Oxide) | - | 22A (Tc) | HiPerFET™, Ultra X2 | 10V | 145mOhm @ 11A, 10V | 5V @ 1.5mA | 37 nC @ 10 V | ±30V | 2190 pF @ 25 V | 37W (Tc) | - | ||
 | 联系我们 | 2,201 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | SOT-227B | 650 V | - | MOSFET (Metal Oxide) | - | 145A (Tc) | HiPerFET™, Ultra X2 | 10V | 17mOhm @ 75A, 10V | 5V @ 8mA | 355 nC @ 10 V | ±30V | 21000 pF @ 25 V | 1040W (Tc) | - | ||
| 1+ ¥54.0000 5+ ¥51.0000 10+ ¥48.0000 更多的价格 | 1,600 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 650 V | - | MOSFET (Metal Oxide) | - | 12A (Tc) | HiPerFET™, Ultra X2 | 10V | 310mOhm @ 6A, 10V | 5V @ 250µA | 18.5 nC @ 10 V | ±30V | 1134 pF @ 25 V | 180W (Tc) | - | ||
| 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 1,300 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AA (IXFA) | 650 V | - | MOSFET (Metal Oxide) | - | 12A (Tc) | HiPerFET™, Ultra X2 | 10V | 310mOhm @ 6A, 10V | 5V @ 250µA | 18.5 nC @ 10 V | ±30V | 1134 pF @ 25 V | 180W (Tc) | - | ||
 | 1+ ¥270.0000 5+ ¥255.0000 10+ ¥240.0000 更多的价格 | 540 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268HV (IXFT) | 650 V | - | MOSFET (Metal Oxide) | - | 80A (Tc) | HiPerFET™, Ultra X2 | 10V | - | 5V @ 4mA | 140 nC @ 10 V | ±30V | 8300 pF @ 25 V | 890W (Tc) | - | ||
| 1+ ¥39.6000 5+ ¥37.4000 10+ ¥35.2000 更多的价格 | 139 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack, Isolated Tab | TO-220 Isolated Tab | 650 V | - | MOSFET (Metal Oxide) | - | 34A (Tc) | HiPerFET™, Ultra X2 | 10V | 100mOhm @ 17A, 10V | 5V @ 1.5mA | 56 nC @ 10 V | ±30V | 3230 pF @ 25 V | 40W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | PLUS264™ | 650 V | - | MOSFET (Metal Oxide) | - | 150A (Tc) | HiPerFET™, Ultra X2 | 10V | 17mOhm @ 75A, 10V | 5.5V @ 8mA | 430 nC @ 10 V | ±30V | 20400 pF @ 25 V | 1560W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack, Isolated Tab | TO-220 Isolated Tab | 650 V | - | MOSFET (Metal Oxide) | - | 8A (Tc) | HiPerFET™, Ultra X2 | 10V | 450mOhm @ 4A, 10V | 5V @ 250µA | 11 nC @ 10 V | ±30V | 790 pF @ 25 V | 150W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | - | - | - | - | - | - | - | - | - | - | HiPerFET™, Ultra X2 | - | - | - | - | - | - | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | - | - | - | - | - | - | - | - | - | - | HiPerFET™, Ultra X2 | - | - | - | - | - | - | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | TO-220-3 | 650 V | - | MOSFET (Metal Oxide) | - | 12A (Tc) | HiPerFET™, Ultra X2 | 10V | 310mOhm @ 6A, 10V | 5V @ 250µA | 18.5 nC @ 10 V | ±30V | 1134 pF @ 25 V | 180W (Tc) | - | ||
.jpg "IXFX100N65X2") | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | PLUS247™-3 | 650 V | - | MOSFET (Metal Oxide) | - | 100A (Tc) | HiPerFET™, Ultra X2 | 10V | 30mOhm @ 50A, 10V | 5.5V @ 4mA | 180 nC @ 10 V | ±30V | 11300 pF @ 25 V | 1040W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | TO-247 (IXFH) | 650 V | - | MOSFET (Metal Oxide) | - | 26A (Tc) | HiPerFET™, Ultra X2 | 10V | 130mOhm @ 500mA, 10V | 5V @ 2.5mA | 45 nC @ 10 V | ±30V | 2450 pF @ 25 V | 460W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | TO-264AA | 650 V | - | MOSFET (Metal Oxide) | - | 120A (Tc) | HiPerFET™, Ultra X2 | 10V | 24mOhm @ 60A, 10V | 5.5V @ 8mA | 225 nC @ 10 V | ±30V | 15500 pF @ 25 V | 1250W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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