HiPerFET™, Trench 系列, 单 FET,MOSFET

结果:
39
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果39
搜索条目:
HiPerFET™, Trench
选择
图片产品详情单价可用性ECAD 模型Mounting TypeFET TypePackage / CaseOperating TemperatureGradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXFH230N10T
MOSFET N-CH 100V 230A TO247AD
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4.5V @ 1mA
HiPerFET™, Trench
100 V
230A (Tc)
10V
4.7mOhm @ 500mA, 10V
250 nC @ 10 V
±20V
15300 pF @ 25 V
650W (Tc)
TO-247AD (IXFH)
-
IXFX180N25T
MOSFET N-CH 250V 180A PLUS247-3
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524 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3 Variant
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
250 V
180A (Tc)
10V
12.9mOhm @ 60A, 10V
345 nC @ 10 V
±20V
28000 pF @ 25 V
1390W (Tc)
PLUS247™-3
-
IXFK170N20T
MOSFET N-CH 200V 170A TO264AA
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-264-3, TO-264AA
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 4mA
HiPerFET™, Trench
200 V
170A (Tc)
10V
11mOhm @ 60A, 10V
265 nC @ 10 V
±20V
19600 pF @ 25 V
1150W (Tc)
TO-264AA (IXFK)
-
IXFX160N30T
MOSFET N-CH 300V 160A PLUS247-3
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402 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3 Variant
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
300 V
160A (Tc)
10V
19mOhm @ 60A, 10V
335 nC @ 10 V
±20V
28000 pF @ 25 V
1390W (Tc)
PLUS247™-3
-
IXFK180N25T
MOSFET N-CH 250V 180A TO264AA
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-264-3, TO-264AA
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
250 V
180A (Tc)
10V
12.9mOhm @ 60A, 10V
345 nC @ 10 V
±20V
28000 pF @ 25 V
1390W (Tc)
TO-264AA (IXFK)
-
IXFK160N30T
MOSFET N-CH 300V 160A TO264AA
联系我们
数量
1 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-264-3, TO-264AA
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
300 V
160A (Tc)
10V
19mOhm @ 60A, 10V
335 nC @ 10 V
±20V
28000 pF @ 25 V
1390W (Tc)
TO-264AA (IXFK)
-
IXFX230N20T
MOSFET N-CH 200V 230A PLUS247-3
联系我们
数量
1 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3 Variant
-
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
200 V
230A (Tc)
10V
7.5mOhm @ 60A, 10V
378 nC @ 10 V
±20V
28000 pF @ 25 V
1670W (Tc)
PLUS247™-3
-
IXFN180N25T
MOSFET N-CH 250V 168A SOT227B
联系我们
数量
1 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
SOT-227-4, miniBLOC
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
250 V
168A (Tc)
10V
12.9mOhm @ 60A, 10V
345 nC @ 10 V
±20V
28000 pF @ 25 V
900W (Tc)
SOT-227B
-
IXFN420N10T
MOSFET N-CH 100V 420A SOT227B
联系我们
353 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
SOT-227-4, miniBLOC
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
100 V
420A (Tc)
10V
2.3mOhm @ 60A, 10V
670 nC @ 10 V
±20V
47000 pF @ 25 V
1070W (Tc)
SOT-227B
-
IXFK360N10T
MOSFET N-CH 100V 360A TO264AA
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-264-3, TO-264AA
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 3mA
HiPerFET™, Trench
100 V
360A (Tc)
10V
2.9mOhm @ 100A, 10V
525 nC @ 10 V
±20V
33000 pF @ 25 V
1250W (Tc)
TO-264AA (IXFK)
-
IXFN230N20T
MOSFET N-CH 200V 220A SOT227B
联系我们
967 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
SOT-227-4, miniBLOC
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
200 V
220A (Tc)
10V
7.5mOhm @ 60A, 10V
378 nC @ 10 V
±20V
28000 pF @ 25 V
1090W (Tc)
SOT-227B
-
IXFK140N25T
MOSFET N-CH 250V 140A TO264AA
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-264-3, TO-264AA
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 4mA
HiPerFET™, Trench
250 V
140A (Tc)
10V
17mOhm @ 60A, 10V
255 nC @ 10 V
±20V
19000 pF @ 25 V
960W (Tc)
TO-264AA (IXFK)
-
IXFH110N25T
MOSFET N-CH 250V 110A TO247AD
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4.5V @ 3mA
HiPerFET™, Trench
250 V
110A (Tc)
10V
24mOhm @ 55A, 10V
157 nC @ 10 V
±20V
9400 pF @ 25 V
694W (Tc)
TO-247AD (IXFH)
-
IXFH150N20T
MOSFET N-CH 200V 150A TO247AD
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 4mA
HiPerFET™, Trench
200 V
150A (Tc)
10V
15mOhm @ 75A, 10V
177 nC @ 10 V
±20V
11700 pF @ 25 V
890W (Tc)
TO-247AD (IXFH)
-
IXFK420N10T
MOSFET N-CH 100V 420A TO264AA
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-264-3, TO-264AA
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
100 V
420A (Tc)
10V
2.6mOhm @ 60A, 10V
670 nC @ 10 V
±20V
47000 pF @ 25 V
1670W (Tc)
TO-264AA (IXFK)
-
IXFK230N20T
MOSFET N-CH 200V 230A TO264AA
联系我们
168 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-264-3, TO-264AA
-
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
200 V
230A (Tc)
10V
7.5mOhm @ 60A, 10V
378 nC @ 10 V
±20V
28000 pF @ 25 V
1670W (Tc)
TO-264AA (IXFK)
-
IXFN160N30T
MOSFET N-CH 300V 130A SOT227B
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
SOT-227-4, miniBLOC
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 8mA
HiPerFET™, Trench
300 V
130A (Tc)
10V
19mOhm @ 60A, 10V
335 nC @ 10 V
±20V
28000 pF @ 25 V
900W (Tc)
SOT-227B
-
IXFN360N10T
MOSFET N-CH 100V 360A SOT-227B
联系我们
4 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
SOT-227-4, miniBLOC
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
HiPerFET™, Trench
100 V
360A (Tc)
10V
2.6mOhm @ 180A, 10V
505 nC @ 10 V
±20V
36000 pF @ 25 V
830W (Tc)
SOT-227B
-
IXFH86N30T
MOSFET N-CH 300V 86A TO247AD
联系我们
2,120 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 4mA
HiPerFET™, Trench
300 V
86A (Tc)
10V
43mOhm @ 43A, 10V
180 nC @ 10 V
±20V
11300 pF @ 25 V
860W (Tc)
TO-247AD (IXFH)
-
IXFX360N10T
MOSFET N-CH 100V 360A PLUS247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3 Variant
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
5V @ 3mA
HiPerFET™, Trench
100 V
360A (Tc)
10V
2.9mOhm @ 100A, 10V
525 nC @ 10 V
±20V
33000 pF @ 25 V
1250W (Tc)
PLUS247™-3
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。