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HiPerFET™, Q3 Class Series, 单 FET，MOSFET
结果:
52
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Mounting Type
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果：52
搜索条目:
HiPerFET™, Q3 Class
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Grade | Supplier Device Package | Technology | FET Feature | Series | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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.jpg "IXFR64N60Q3") | 1+ $522.0000 5+ $493.0000 10+ $464.0000 更多的价格 | 3,330 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | ISOPLUS247™ | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 600 V | 42A (Tc) | 10V | 104mOhm @ 32A, 10V | 6.5V @ 4mA | 190 nC @ 10 V | ±30V | 9930 pF @ 25 V | 568W (Tc) | - | ||
| 1+ $540.0000 5+ $510.0000 10+ $480.0000 更多的价格 | 3,090 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | ISOPLUS247™ | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 800 V | 24A (Tc) | 10V | 300mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 6940 pF @ 25 V | 500W (Tc) | - | ||
 | 1+ $266.4000 5+ $251.6000 10+ $236.8000 更多的价格 | 2,370 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | TO-268AA | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 1000 V | 15A (Tc) | 10V | 1.05Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64 nC @ 10 V | ±30V | 3250 pF @ 25 V | 690W (Tc) | - | ||
 | 1+ $540.0000 5+ $510.0000 10+ $480.0000 更多的价格 | 2,110 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | SOT-227B | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 800 V | 37A (Tc) | 10V | 190mOhm @ 22A, 10V | 6.5V @ 8mA | 185 nC @ 10 V | ±30V | 9840 pF @ 25 V | 780W (Tc) | - | ||
| 1+ $270.0000 5+ $255.0000 10+ $240.0000 更多的价格 | 900 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | ISOPLUS247™ | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 1000 V | 18A (Tc) | 10V | 490mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | 500W (Tc) | - | ||
 | 1+ $104.4000 5+ $98.6000 10+ $92.8000 更多的价格 | 751 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 1000 V | 32A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 8mA | 195 nC @ 10 V | ±30V | 9940 pF @ 25 V | 1250W (Tc) | - | ||
| 1+ $360.0000 5+ $340.0000 10+ $320.0000 更多的价格 | 600 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | SOT-227B | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 800 V | 49A (Tc) | 10V | 140mOhm @ 31A, 10V | 6.5V @ 8mA | 270 nC @ 10 V | ±30V | 13600 pF @ 25 V | 960W (Tc) | - | ||
| 1+ $621.0000 5+ $586.5000 10+ $552.0000 更多的价格 | 100 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | SOT-227B | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 500 V | 82A (Tc) | 10V | 49mOhm @ 50A, 10V | 6.5V @ 8mA | 255 nC @ 10 V | ±30V | 13800 pF @ 25 V | 960W (Tc) | - | ||
.jpg "IXFX24N100Q3") | 1+ $216.0000 5+ $204.0000 10+ $192.0000 更多的价格 | 30 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | - | PLUS247™-3 | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 1000 V | 24A (Tc) | 10V | 440mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | 1000W (Tc) | - | ||
 | 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | TO-247AD (IXFH) | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 1000 V | 15A (Tc) | 10V | 1.05Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64 nC @ 10 V | ±30V | 3250 pF @ 25 V | 690W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | ISOPLUS247™ | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 500 V | 50A (Tc) | 10V | 72mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | 570W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | ISOPLUS247™ | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 500 V | 25A (Tc) | 10V | 154mOhm @ 22A, 10V | 6.5V @ 4mA | 93 nC @ 10 V | ±30V | 4800 pF @ 25 V | 300W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | ISOPLUS247™ | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 600 V | 32A (Tc) | 10V | 154mOhm @ 24A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7020 pF @ 25 V | 500W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | - | PLUS247™-3 | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 500 V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 6.5V @ 4mA | 145 nC @ 10 V | ±30V | 6950 pF @ 25 V | 1000W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 500 V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 6.5V @ 4mA | 145 nC @ 10 V | ±30V | 6950 pF @ 25 V | 1000W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 600 V | 48A (Tc) | 10V | 140mOhm @ 24A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7020 pF @ 25 V | 1000W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | PLUS264™ | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 500 V | 100A (Tc) | 10V | 49mOhm @ 50A, 10V | 6.5V @ 8mA | 255 nC @ 10 V | ±30V | 13800 pF @ 25 V | 1560W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 800 V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 6940 pF @ 25 V | 1000W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 1000 V | 24A (Tc) | 10V | 440mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | 1000W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | SOT-227B | MOSFET (Metal Oxide) | - | HiPerFET™, Q3 Class | 1100 V | 35A (Tc) | 10V | 260mOhm @ 20A, 10V | 6.5V @ 8mA | 300 nC @ 10 V | ±30V | 14000 pF @ 25 V | 960W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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