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HiPerFET™, Q2 Class Series, 单 FET，MOSFET
结果:
30
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Package / Case
Mounting Type
Operating Temperature
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
结果：30
搜索条目:
HiPerFET™, Q2 Class
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Grade | Supplier Device Package | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ ¥306.0000 5+ ¥289.0000 10+ ¥272.0000 更多的价格 | 4,008 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | SOT-227B | MOSFET (Metal Oxide) | - | 38A (Tc) | HiPerFET™, Q2 Class | 1000 V | 10V | 250mOhm @ 19A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 7200 pF @ 25 V | 890W (Tc) | - | ||
 | 1+ ¥468.0000 5+ ¥442.0000 10+ ¥416.0000 更多的价格 | 500 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | PLUS264™ | MOSFET (Metal Oxide) | - | 50A (Tc) | HiPerFET™, Q2 Class | 800 V | 10V | 160mOhm @ 500mA, 10V | 5.5V @ 8mA | 260 nC @ 10 V | ±30V | 7200 pF @ 25 V | 1135W (Tc) | - | ||
| 1+ ¥315.0000 5+ ¥297.5000 10+ ¥280.0000 更多的价格 | 192 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | SOT-227B | MOSFET (Metal Oxide) | - | 72A (Tc) | HiPerFET™, Q2 Class | 500 V | 10V | 60mOhm @ 500mA, 10V | 4.5V @ 8mA | 250 nC @ 10 V | ±30V | 12800 pF @ 25 V | 890W (Tc) | - | ||
 | 1+ ¥360.0000 5+ ¥340.0000 10+ ¥320.0000 更多的价格 | 30 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | TO-247AD (IXFH) | MOSFET (Metal Oxide) | - | 14A (Tc) | HiPerFET™, Q2 Class | 1000 V | 10V | 950mOhm @ 7A, 10V | 5.5V @ 4mA | 83 nC @ 10 V | ±30V | 2800 pF @ 25 V | 500W (Tc) | - | ||
| 1+ ¥1800.0000 5+ ¥1700.0000 10+ ¥1600.0000 更多的价格 | 28 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | SOT-227B | MOSFET (Metal Oxide) | - | 70A (Tc) | HiPerFET™, Q2 Class | 600 V | 10V | 80mOhm @ 35A, 10V | 5V @ 8mA | 265 nC @ 10 V | ±30V | 7200 pF @ 25 V | 890W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | 52A (Tc) | HiPerFET™, Q2 Class | 600 V | 10V | 115mOhm @ 500mA, 10V | 4.5V @ 8mA | 198 nC @ 10 V | ±30V | 6800 pF @ 25 V | 735W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | - | N-Channel | TO-264-3, TO-264AA | - | ISOPLUS264™ | MOSFET (Metal Oxide) | - | 30A (Tc) | HiPerFET™, Q2 Class | 1200 V | - | - | - | - | - | - | - | - | ||
.jpg "IXFX52N60Q2") | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | - | PLUS247™-3 | MOSFET (Metal Oxide) | - | 52A (Tc) | HiPerFET™, Q2 Class | 600 V | 10V | 115mOhm @ 500mA, 10V | 4.5V @ 8mA | 198 nC @ 10 V | ±30V | 6800 pF @ 25 V | 735W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | - | PLUS247™-3 | MOSFET (Metal Oxide) | - | 60A (Tc) | HiPerFET™, Q2 Class | 550 V | 10V | 88mOhm @ 30A, 10V | 4.5V @ 8mA | 200 nC @ 10 V | ±30V | 6900 pF @ 25 V | 735W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | - | N-Channel | TO-3P-3, SC-65-3 | - | TO-3P | MOSFET (Metal Oxide) | - | 24A (Tc) | HiPerFET™, Q2 Class | 500 V | - | - | - | - | - | - | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | - | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | TO-268AA | MOSFET (Metal Oxide) | - | 23A (Tc) | HiPerFET™, Q2 Class | 600 V | - | - | - | - | - | - | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | - | N-Channel | TO-3P-3, SC-65-3 | - | TO-3P | MOSFET (Metal Oxide) | - | 21A (Tc) | HiPerFET™, Q2 Class | 500 V | - | - | - | - | - | - | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | ISOPLUS264™ | MOSFET (Metal Oxide) | - | 55A (Tc) | HiPerFET™, Q2 Class | 500 V | 10V | 66mOhm @ 40A, 10V | 5V @ 8mA | 260 nC @ 10 V | ±30V | 10500 pF @ 25 V | 625W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | 60A (Tc) | HiPerFET™, Q2 Class | 550 V | 10V | 88mOhm @ 30A, 10V | 4.5V @ 8mA | 200 nC @ 10 V | ±30V | 7300 pF @ 25 V | 735W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | 38A (Tc) | HiPerFET™, Q2 Class | 800 V | 10V | 220mOhm @ 19A, 10V | 4.5V @ 8mA | 190 nC @ 10 V | ±30V | 8340 pF @ 25 V | 735W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | MOSFET (Metal Oxide) | - | 30A (Tc) | HiPerFET™, Q2 Class | 1000 V | 10V | 400mOhm @ 15A, 10V | 5V @ 8mA | 186 nC @ 10 V | ±30V | 8200 pF @ 25 V | 735W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | SOT-227B | MOSFET (Metal Oxide) | - | 50A (Tc) | HiPerFET™, Q2 Class | 800 V | 10V | 160mOhm @ 500mA, 10V | 5.5V @ 8mA | 260 nC @ 10 V | ±30V | 13500 pF @ 25 V | 1135W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | ISOPLUS264™ | MOSFET (Metal Oxide) | - | 29A (Tc) | HiPerFET™, Q2 Class | 1000 V | 10V | 280mOhm @ 19A, 10V | 5.5V @ 8mA | 250 nC @ 10 V | ±30V | 13500 pF @ 25 V | 380W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | PLUS264™ | MOSFET (Metal Oxide) | - | 70A (Tc) | HiPerFET™, Q2 Class | 600 V | 10V | 88mOhm @ 35A, 10V | 5.5V @ 8mA | 265 nC @ 10 V | ±30V | 12000 pF @ 25 V | 890W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | PLUS264™ | MOSFET (Metal Oxide) | - | 80A (Tc) | HiPerFET™, Q2 Class | 500 V | 10V | 60mOhm @ 500mA, 10V | 5.5V @ 8mA | 250 nC @ 10 V | ±30V | 15000 pF @ 25 V | 960W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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