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HiPerFET™, Q Class Series, 单 FET，MOSFET
结果:
68
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
结果：68
搜索条目:
HiPerFET™, Q Class
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Qualification |
|---|
 | 1+ ¥270.0000 5+ ¥255.0000 10+ ¥240.0000 更多的价格 | 1,380 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | MOSFET (Metal Oxide) | - | 6A (Tc) | HiPerFET™, Q Class | 1000 V | 10V | 1.9Ohm @ 3A, 10V | 4.5V @ 2.5mA | 48 nC @ 10 V | ±20V | 2200 pF @ 25 V | 180W (Tc) | TO-247AD (IXFH) | - | ||
.jpg "IXFR48N50Q") | 1+ ¥270.0000 5+ ¥255.0000 10+ ¥240.0000 更多的价格 | 780 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | MOSFET (Metal Oxide) | - | 40A (Tc) | HiPerFET™, Q Class | 500 V | 10V | 110mOhm @ 24A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | 310W (Tc) | ISOPLUS247™ | - | ||
| 1+ ¥100.8000 5+ ¥95.2000 10+ ¥89.6000 更多的价格 | 275 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | MOSFET (Metal Oxide) | - | 52A (Tc) | HiPerFET™, Q Class | 300 V | 10V | 60mOhm @ 500mA, 10V | 4V @ 4mA | 150 nC @ 10 V | ±20V | 5300 pF @ 25 V | 360W (Tc) | TO-247AD (IXFH) | - | ||
 | 1+ ¥72.0000 5+ ¥68.0000 10+ ¥64.0000 更多的价格 | 185 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-264-3, TO-264AA | - | MOSFET (Metal Oxide) | - | 27A (Tc) | HiPerFET™, Q Class | 800 V | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 7600 pF @ 25 V | 500W (Tc) | TO-264AA (IXFK) | - | ||
 | 1+ ¥288.0000 5+ ¥272.0000 10+ ¥256.0000 更多的价格 | 148 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | MOSFET (Metal Oxide) | - | 48A (Tc) | HiPerFET™, Q Class | 500 V | 10V | 100mOhm @ 500mA, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | 500W (Tc) | SOT-227B | - | ||
.jpg "IXFX48N50Q") | 1+ ¥180.0000 5+ ¥170.0000 10+ ¥160.0000 更多的价格 | 19 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | - | MOSFET (Metal Oxide) | - | 48A (Tc) | HiPerFET™, Q Class | 500 V | 10V | 100mOhm @ 24A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | 500W (Tc) | PLUS247™-3 | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | -55°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | - | MOSFET (Metal Oxide) | - | 21A (Tc) | HiPerFET™, Q Class | 1000 V | 10V | 500mOhm @ 500mA, 10V | 5V @ 4mA | 170 nC @ 10 V | ±20V | 5900 pF @ 25 V | 520W (Tc) | SOT-227B | - | ||
 | 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | - | 4A (Tc) | HiPerFET™, Q Class | 1000 V | 10V | 3Ohm @ 2A, 10V | 4.5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | 150W (Tc) | TO-263AA (IXFA) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | MOSFET (Metal Oxide) | - | 13A (Tc) | HiPerFET™, Q Class | 800 V | 10V | 700mOhm @ 6.5A, 10V | 4.5V @ 4mA | 90 nC @ 10 V | ±20V | 3250 pF @ 25 V | 250W (Tc) | TO-268AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | - | MOSFET (Metal Oxide) | - | 73A (Tc) | HiPerFET™, Q Class | 300 V | 10V | 45mOhm @ 500mA, 10V | 4V @ 4mA | 195 nC @ 10 V | ±30V | 5400 pF @ 25 V | 500W (Tc) | PLUS247™-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | - | MOSFET (Metal Oxide) | - | 24A (Tc) | HiPerFET™, Q Class | 900 V | 10V | 450mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 5900 pF @ 25 V | 500W (Tc) | PLUS247™-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | MOSFET (Metal Oxide) | - | 9A (Tc) | HiPerFET™, Q Class | 800 V | 10V | 1.1Ohm @ 500mA, 10V | 5V @ 2.5mA | 56 nC @ 10 V | ±20V | 2200 pF @ 25 V | 180W (Tc) | TO-268AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | MOSFET (Metal Oxide) | - | 40A (Tc) | HiPerFET™, Q Class | 500 V | 10V | 140mOhm @ 500mA, 10V | 4.5V @ 4mA | 130 nC @ 10 V | ±30V | 3800 pF @ 25 V | 500W (Tc) | TO-268AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | MOSFET (Metal Oxide) | - | 28A (Tc) | HiPerFET™, Q Class | 500 V | 10V | 200mOhm @ 14A, 10V | 4.5V @ 4mA | 94 nC @ 10 V | ±30V | 3000 pF @ 25 V | 375W (Tc) | TO-268AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | MOSFET (Metal Oxide) | - | 23A (Tc) | HiPerFET™, Q Class | 800 V | 10V | 420mOhm @ 500mA, 10V | 4.5V @ 3mA | 130 nC @ 10 V | ±30V | 4900 pF @ 25 V | 500W (Tc) | TO-268AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | MOSFET (Metal Oxide) | - | 23A (Tc) | HiPerFET™, Q Class | 600 V | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 90 nC @ 10 V | ±30V | 3300 pF @ 25 V | 400W (Tc) | TO-268AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | MOSFET (Metal Oxide) | - | 12A (Tc) | HiPerFET™, Q Class | 900 V | 10V | 900mOhm @ 6A, 10V | 5.5V @ 4mA | 90 nC @ 10 V | ±20V | 2900 pF @ 25 V | 300W (Tc) | TO-268AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | MOSFET (Metal Oxide) | - | 23A (Tc) | HiPerFET™, Q Class | 800 V | 10V | 420mOhm @ 500mA, 10V | 4.5V @ 3mA | 130 nC @ 10 V | ±30V | 4900 pF @ 25 V | 500W (Tc) | TO-247AD (IXFH) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 Variant | - | MOSFET (Metal Oxide) | - | 90A (Tc) | HiPerFET™, Q Class | 200 V | 10V | 22mOhm @ 45A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 6800 pF @ 25 V | 500W (Tc) | PLUS247™-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | MOSFET (Metal Oxide) | - | 3.5A (Tc) | HiPerFET™, Q Class | 1000 V | 10V | 3Ohm @ 2A, 10V | 5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | 80W (Tc) | ISOPLUS247™ | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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