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HEXFET®, StrongIRFET™ 系列, 单 FET，MOSFET
结果:
116
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
结果：116
搜索条目:
HEXFET®, StrongIRFET™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Operating Temperature | Mounting Type | Package / Case | FET Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | - | Through Hole | TO-220-3 | N-Channel | TO-220AB | 40 V | - | MOSFET (Metal Oxide) | - | 120A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | 99W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | TO-262 | 75 V | - | MOSFET (Metal Oxide) | - | 195A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | 375W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | TO-262 | 75 V | - | MOSFET (Metal Oxide) | - | 183A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | 290W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MD | N-Channel | DIRECTFET™ MD | 20 V | - | MOSFET (Metal Oxide) | - | 38A (Ta), 211A (Tc) | HEXFET®, StrongIRFET™ | 2.5V, 4.5V | 0.75mOhm @ 50A, 10V | 1.1V @ 100µA | 158 nC @ 4.5 V | ±12V | 8292 pF @ 10 V | 2.1W (Ta), 63W (Tc) | - | ||
 | 联系我们 | 1,564 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | N-Channel | D2PAK (7-Lead) | 60 V | - | MOSFET (Metal Oxide) | - | 240A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.7V @ 250µA | 354 nC @ 10 V | ±20V | 12960 pF @ 25 V | 375W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | N-Channel | D2PAK (7-Lead) | 60 V | - | MOSFET (Metal Oxide) | - | 240A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 1.95mOhm @ 100A, 10V | 3.7V @ 250µA | 300 nC @ 10 V | ±20V | 9990 pF @ 25 V | 290W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | D2PAK | 60 V | - | MOSFET (Metal Oxide) | - | 195A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | 375W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | D2PAK | 60 V | - | MOSFET (Metal Oxide) | - | 195A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279 nC @ 10 V | ±20V | 10034 pF @ 25 V | 294W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | D2PAK | 60 V | - | MOSFET (Metal Oxide) | - | 173A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | 230W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | D2PAK | 60 V | - | MOSFET (Metal Oxide) | - | 110A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4555 pF @ 25 V | 160W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | PG-TO263-3 | 75 V | - | MOSFET (Metal Oxide) | - | 85A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4440 pF @ 25 V | 140W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | TO-262 | 75 V | - | MOSFET (Metal Oxide) | - | 76A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109 nC @ 10 V | ±20V | 4020 pF @ 25 V | 125W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MD | N-Channel | DIRECTFET™ MD | 20 V | - | MOSFET (Metal Oxide) | - | 38A (Ta), 211A (Tc) | HEXFET®, StrongIRFET™ | 2.5V, 4.5V | 0.75mOhm @ 50A, 10V | 1.1V @ 100µA | 158 nC @ 4.5 V | ±12V | 8292 pF @ 10 V | 2.1W (Ta), 63W (Tc) | - | ||
| 联系我们 | 502 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | PG-TO263-3 | 60 V | - | MOSFET (Metal Oxide) | - | 195A (Tc) | HEXFET®, StrongIRFET™ | 4.5V, 10V | 1.95mOhm @ 100A, 10V | 2.4V @ 250µA | 255 nC @ 4.5 V | ±20V | 15330 pF @ 25 V | 375W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | PG-TO263-3 | 75 V | - | MOSFET (Metal Oxide) | - | 76A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109 nC @ 10 V | ±20V | 4020 pF @ 25 V | 125W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | N-Channel | TO-220AB Full-Pak | 40 V | - | MOSFET (Metal Oxide) | - | 80A (Tc) | HEXFET®, StrongIRFET™ | 10V | 3.3mOhm @ 48A, 10V | 3.9V @ 100µA | 90 nC @ 10 V | ±20V | 3199 pF @ 25 V | 40.5W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | N-Channel | PQFN (5x6) | 75 V | - | MOSFET (Metal Oxide) | - | 68A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 8mOhm @ 41A, 10V | 3.7V @ 100µA | 110 nC @ 10 V | ±20V | 4030 pF @ 25 V | 83W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | N-Channel | TO-220AB Full-Pak | 40 V | - | MOSFET (Metal Oxide) | - | 95A (Tc) | HEXFET®, StrongIRFET™ | 10V | 2.5mOhm @ 57A, 10V | 3.9V @ 100µA | 132 nC @ 10 V | ±20V | 4549 pF @ 25 V | 42W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | TO-262 | 75 V | - | MOSFET (Metal Oxide) | - | 195A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | 375W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | TO-262 | 75 V | - | MOSFET (Metal Oxide) | - | 183A (Tc) | HEXFET®, StrongIRFET™ | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | 290W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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