FRFET®, SuperFET® III 系列, 单 FET,MOSFET

结果:
21
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Vgs (Max)
结果21
搜索条目:
FRFET®, SuperFET® III
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)Supplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
NTHL095N65S3HF
MOSFET N-CH 650V 36A TO247-3
联系我们
184 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
36A (Tc)
FRFET®, SuperFET® III
10V
95mOhm @ 18A, 10V
5V @ 860µA
66 nC @ 10 V
±30V
2930 pF @ 400 V
272W (Tc)
-
NTHL050N65S3HF
MOSFET N-CH 650V 58A TO247-3
联系我们
89 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
58A (Tc)
FRFET®, SuperFET® III
10V
50mOhm @ 29A, 10V
5V @ 1.7mA
125 nC @ 10 V
±30V
5017 pF @ 400 V
378W (Tc)
-
NTHL027N65S3HF
MOSFET N-CH 650V 75A TO247-3
联系我们
678 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
75A (Tc)
FRFET®, SuperFET® III
10V
27.4mOhm @ 35A, 10V
5V @ 3mA
225 nC @ 10 V
±30V
7630 pF @ 400 V
595W (Tc)
-
NTP110N65S3HF
MOSFET N-CH 650V 30A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
TO-220-3
-
MOSFET (Metal Oxide)
-
30A (Tc)
FRFET®, SuperFET® III
10V
110mOhm @ 15A, 10V
5V @ 740µA
62 nC @ 10 V
±30V
2635 pF @ 400 V
240W (Tc)
-
NTPF110N65S3HF
MOSFET N-CH 650V 30A TO220FP
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
TO-220FP
-
MOSFET (Metal Oxide)
-
30A (Tc)
FRFET®, SuperFET® III
10V
110mOhm @ 15A, 10V
5V @ 740µA
62 nC @ 10 V
±30V
2635 pF @ 400 V
240W (Tc)
-
NTHL190N65S3HF
MOSFET N-CH 650V 20A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
20A (Tc)
FRFET®, SuperFET® III
10V
190mOhm @ 10A, 10V
5V @ 430µA
34 nC @ 10 V
±30V
1610 pF @ 400 V
162W (Tc)
-
NTH4L040N65S3F
MOSFET N-CH 650V 65A TO247-4
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
650 V
TO-247-4L
-
MOSFET (Metal Oxide)
-
65A (Tc)
FRFET®, SuperFET® III
10V
40mOhm @ 32.5A, 10V
5V @ 2.1mA
158 nC @ 10 V
±30V
5940 pF @ 400 V
446W (Tc)
-
NTB190N65S3HF
MOSFET N-CH 650V 20A D2PAK-3
联系我们
1,174 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
20A (Tc)
FRFET®, SuperFET® III
10V
190mOhm @ 10A, 10V
5V @ 430µA
34 nC @ 10 V
±30V
1610 pF @ 400 V
162W (Tc)
-
NTHL082N65S3HF
MOSFET N-CH 650V 40A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
40A (Tc)
FRFET®, SuperFET® III
-
82mOhm @ 20A, 10V
5V @ 1mA
79 nC @ 10 V
±30V
3330 pF @ 400 V
313W (Tc)
-
NTP082N65S3HF
MOSFET N-CH 650V 40A TO220-3
联系我们
380 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
TO-220-3
-
MOSFET (Metal Oxide)
-
40A (Tc)
FRFET®, SuperFET® III
-
82mOhm @ 20A, 10V
5V @ 4mA
81 nC @ 10 V
±30V
3410 pF @ 400 V
313W (Tc)
-
NTB095N65S3HF
MOSFET N-CH 650V 36A D2PAK-3
联系我们
670 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
36A (Tc)
FRFET®, SuperFET® III
10V
95mOhm @ 18A, 10V
5V @ 860µA
66 nC @ 10 V
±30V
2930 pF @ 400 V
272W (Tc)
-
NTB110N65S3HF
MOSFET N-CH 650V 30A D2PAK-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
30A (Tc)
FRFET®, SuperFET® III
10V
110mOhm @ 15A, 10V
5V @ 740µA
62 nC @ 10 V
±30V
2635 pF @ 400 V
240W (Tc)
-
NTHL033N65S3HF
MOSFET N-CH 650V 70A TO247-3
联系我们
2,250 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
70A (Tc)
FRFET®, SuperFET® III
10V
33mOhm @ 35A, 10V
5V @ 2.5mA
188 nC @ 10 V
±30V
6720 pF @ 400 V
500W (Tc)
-
NTHLD040N65S3HF
MOSFET N-CH 650V 65A TO247
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
65A (Tc)
FRFET®, SuperFET® III
10V
40mOhm @ 32.5A, 10V
5V @ 2.1mA
159 nC @ 10 V
±30V
5945 pF @ 400 V
446W (Tc)
-
NTPF190N65S3HF
MOSFET N-CH 650V 20A TO220FP
联系我们
6,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
TO-220FP
-
MOSFET (Metal Oxide)
-
20A (Tc)
FRFET®, SuperFET® III
10V
190mOhm @ 10A, 10V
5V @ 430µA
34 nC @ 10 V
±30V
1610 pF @ 400 V
36W (Tc)
-
NTP190N65S3HF
MOSFET N-CH 650V 20A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
TO-220-3
-
MOSFET (Metal Oxide)
-
20A (Tc)
FRFET®, SuperFET® III
10V
190mOhm @ 10A, 10V
5V @ 430µA
34 nC @ 10 V
±30V
1610 pF @ 400 V
162W (Tc)
-
NTB150N65S3HF
MOSFET N-CH 650V 24A D2PAK-3
联系我们
580 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
24A (Tc)
FRFET®, SuperFET® III
10V
150mOhm @ 12A, 10V
5V @ 540µA
43 nC @ 10 V
±30V
1985 pF @ 400 V
192W (Tc)
-
NTP150N65S3HF
MOSFET N-CH 650V 24A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
TO-220-3
-
MOSFET (Metal Oxide)
-
24A (Tc)
FRFET®, SuperFET® III
10V
150mOhm @ 12A, 10V
5V @ 540µA
43 nC @ 10 V
±30V
1985 pF @ 400 V
192W (Tc)
-
NTHL040N65S3HF
MOSFET N-CH 650V 65A TO247-3
联系我们
6,660 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
65A (Tc)
FRFET®, SuperFET® III
10V
40mOhm @ 32.5A, 10V
5V @ 2.1mA
159 nC @ 10 V
±30V
5945 pF @ 400 V
446W (Tc)
-
NTH4L027N65S3F
MOSFET N-CH 650V 75A TO247-4
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
650 V
TO-247-4L
-
MOSFET (Metal Oxide)
-
75A (Tc)
FRFET®, SuperFET® III
10V
27.4mOhm @ 35A, 10V
5V @ 3mA
259 nC @ 10 V
±30V
7690 pF @ 400 V
595W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。