FRFET®, SuperFET® II 系列, 单 FET,MOSFET

结果:
23
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
结果23
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FRFET®, SuperFET® II
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图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCPF260N65FL1
MOSFET N-CH 650V 15A TO220F
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
15A (Tc)
FRFET®, SuperFET® II
10V
260mOhm @ 7.5A, 10V
5V @ 1.5mA
60 nC @ 10 V
±20V
2340 pF @ 100 V
36W (Tc)
-
FCH041N65EFLN4
MOSFET N-CH 650V 76A TO247-4
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
298 nC @ 10 V
±20V
12560 pF @ 100 V
595W (Tc)
-
FCH041N65F-F155
MOSFET N-CH 650V 76A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
294 nC @ 10 V
±20V
13020 pF @ 100 V
595W (Tc)
-
FCPF260N65FL1
MOSFET N-CH 650V 15A TO220F
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
15A (Tc)
FRFET®, SuperFET® II
10V
260mOhm @ 7.5A, 10V
5V @ 1.5mA
60 nC @ 10 V
±20V
2340 pF @ 100 V
36W (Tc)
-
FCPF380N65FL1
MOSFET N-CH 650V 10.2A TO220F
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5,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
10.2A (Tc)
FRFET®, SuperFET® II
10V
380mOhm @ 5.1A, 10V
5V @ 1mA
43 nC @ 10 V
±20V
1680 pF @ 100 V
33W (Tc)
-
NTH027N65S3F_F155
MOSFET N-CH 650V 75A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
75A (Tc)
FRFET®, SuperFET® II
10V
27.4mOhm @ 35A, 10V
5V @ 7.5mA
259 nC @ 10 V
±30V
7690 pF @ 400 V
595W (Tc)
-
FCP190N65F
MOSFET N-CH 650V 20.6A TO220-3
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15,200 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
20.6A (Tc)
FRFET®, SuperFET® II
10V
190mOhm @ 10A, 10V
5V @ 2mA
78 nC @ 10 V
±20V
3225 pF @ 25 V
208W (Tc)
-
NTH027N65S3F-F155
MOSFET N-CH 650V 75A TO247-3
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100 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
75A (Tc)
FRFET®, SuperFET® II
10V
27.4mOhm @ 35A, 10V
5V @ 7.5mA
259 nC @ 10 V
±30V
7690 pF @ 400 V
595W (Tc)
-
FCH190N65F-F155
MOSFET N-CH 650V 20.6A TO247
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
20.6A (Tc)
FRFET®, SuperFET® II
10V
190mOhm @ 10A, 10V
5V @ 2mA
78 nC @ 10 V
±20V
3225 pF @ 100 V
208W (Tc)
-
FCH110N65F-F155
MOSFET N-CH 650V 35A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
35A (Tc)
FRFET®, SuperFET® II
10V
110mOhm @ 17.5A, 10V
5V @ 3.5mA
145 nC @ 10 V
±20V
4895 pF @ 100 V
357W (Tc)
-
FCH041N65EF-F155
MOSFET N-CH 650V 76A TO247
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583 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
298 nC @ 10 V
±20V
12560 pF @ 100 V
595W (Tc)
-
NTP082N65S3F
MOSFET N-CH 650V 40A TO220-3
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211 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
40A (Tc)
FRFET®, SuperFET® II
10V
82mOhm @ 20A, 10V
5V @ 4mA
81 nC @ 10 V
±30V
3410 pF @ 400 V
313W (Tc)
-
FCP110N65F
MOSFET N-CH 650V 35A TO220-3
联系我们
800 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
35A (Tc)
FRFET®, SuperFET® II
10V
110mOhm @ 17.5A, 10V
5V @ 3.5mA
145 nC @ 10 V
±20V
4895 pF @ 100 V
357W (Tc)
-
FCB110N65F
MOSFET N-CH 650V 35A D2PAK
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19,980 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
650 V
-
MOSFET (Metal Oxide)
-
35A (Tc)
FRFET®, SuperFET® II
10V
110mOhm @ 17.5A, 10V
5V @ 3.5mA
145 nC @ 10 V
±20V
4895 pF @ 100 V
357W (Tc)
-
FCH041N65EFL4
MOSFET N-CH 650V 76A TO247
联系我们
2,694 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
298 nC @ 10 V
±20V
12560 pF @ 100 V
595W (Tc)
-
FCPF190N65FL1-F154
MOSFET N-CH 650V 20.6A TO220F-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
20.6A (Tc)
FRFET®, SuperFET® II
-
190mOhm @ 10A, 10V
5V @ 2mA
78 nC @ 10 V
±20V
3055 pF @ 100 V
39W (Tc)
-
FCH072N60F
MOSFET N-CH 600V 52A TO247-3
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10,539 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
600 V
-
MOSFET (Metal Oxide)
-
52A (Tc)
FRFET®, SuperFET® II
10V
72mOhm @ 26A, 10V
5V @ 250µA
215 nC @ 10 V
±20V
8660 pF @ 100 V
481W (Tc)
-
FCH077N65F-F155
MOSFET N-CH 650V 54A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
54A (Tc)
FRFET®, SuperFET® II
10V
77mOhm @ 27A, 10V
5V @ 5.4mA
164 nC @ 10 V
±20V
7109 pF @ 100 V
481W (Tc)
-
FCPF260N65FL1-F154
MOSFET N-CH 650V 15A TO220F-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
15A (Tc)
FRFET®, SuperFET® II
-
260mOhm @ 7.5A, 10V
5V @ 1.5mA
60 nC @ 10 V
±20V
2340 pF @ 100 V
36W (Tc)
-
FCPF380N65FL1-F154
MOSFET N-CH 650V 10.2A TO220F-3
联系我们
900 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
10.2A (Tc)
FRFET®, SuperFET® II
-
380mOhm @ 5.1A, 10V
5V @ 1mA
43 nC @ 10 V
±20V
1680 pF @ 100 V
33W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。