DTMOSIV-H Series, 单 FET,MOSFET

结果:
13
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果13
搜索条目:
DTMOSIV-H
选择
图片产品详情单价可用性ECAD 模型Mounting TypeFET TypeOperating TemperatureGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
TK31V60X,LQ
1+
¥72.0000
5+
¥68.0000
10+
¥64.0000
数量
28 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
30.8A (Ta)
10V
98mOhm @ 9.4A, 10V
3.5V @ 1.5mA
65 nC @ 10 V
±30V
3000 pF @ 300 V
240W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK25E60X5,S1X
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
140mOhm @ 7.5A, 10V
4.5V @ 1.2mA
60 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
TO-220
TO-220-3
-
TK25A60X,S5X
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
125mOhm @ 7.5A, 10V
3.5V @ 1.2mA
40 nC @ 10 V
±30V
2400 pF @ 300 V
45W (Tc)
TO-220SIS
TO-220-3 Full Pack
-
TK25E60X,S1X
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
125mOhm @ 7.5A, 10V
3.5V @ 1.2mA
40 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
TO-220
TO-220-3
-
TK25N60X,S1F
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
125mOhm @ 7.5A, 10V
3.5V @ 1.2mA
40 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
TO-247
TO-247-3
-
TK39N60X,S1F
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
38.8A (Ta)
10V
65mOhm @ 12.5A, 10V
3.5V @ 1.9mA
85 nC @ 10 V
±30V
4100 pF @ 300 V
270W (Tc)
TO-247
TO-247-3
-
TK25A60X5,S5X
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
140mOhm @ 7.5A, 10V
4.5V @ 1.2mA
60 nC @ 10 V
±30V
2400 pF @ 300 V
45W (Tc)
TO-220SIS
TO-220-3 Full Pack
-
TK31N60X,S1F
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
30.8A (Ta)
10V
88mOhm @ 9.4A, 10V
3.5V @ 1.5mA
65 nC @ 10 V
±30V
3000 pF @ 300 V
230W (Tc)
TO-247
TO-247-3
-
TK25N60X5,S1F
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
140mOhm @ 7.5A, 10V
4.5V @ 1.2mA
60 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
TO-247
TO-247-3
-
TK25V60X,LQ
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
135mOhm @ 7.5A, 10V
3.5V @ 1.2mA
40 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK62N60X,S1F
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
61.8A (Ta)
10V
40mOhm @ 21A, 10V
3.5V @ 3.1mA
135 nC @ 10 V
±30V
6500 pF @ 300 V
400W (Tc)
TO-247
TO-247-3
-
TK22V65X5,LQ
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
650 V
22A (Ta)
10V
170mOhm @ 11A, 10V
4.5V @ 1.1mA
50 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK31E60X,S1X
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
30.8A (Ta)
10V
88mOhm @ 9.4A, 10V
3.5V @ 1.5mA
65 nC @ 10 V
±30V
3000 pF @ 300 V
230W (Tc)
TO-220
TO-220-3
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。