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DTMOSIV Series, 单 FET，MOSFET
结果:
117
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Supplier Device Package
Package / Case
Operating Temperature
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果：117
搜索条目:
DTMOSIV
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Package / Case | FET Type | Supplier Device Package | Operating Temperature | Grade | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ ¥4.8600 5+ ¥4.5900 10+ ¥4.3200 更多的价格 | 50,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | N-Channel | TO-220 | 150°C | - | MOSFET (Metal Oxide) | - | 6.5A (Ta) | DTMOSIV | 800 V | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | 110W (Tc) | - | ||
 | 1+ ¥2.1600 5+ ¥2.0400 10+ ¥1.9200 更多的价格 | 14,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 5.4A (Ta) | DTMOSIV | 600 V | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | 60W (Tc) | - | ||
 | 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | 4-VSFN Exposed Pad | N-Channel | 4-DFN-EP (8x8) | 150°C (TA) | - | MOSFET (Metal Oxide) | - | 30.8A (Ta) | DTMOSIV | 600 V | 10V | 109mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | 240W (Tc) | - | ||
 | 1+ ¥25.2000 5+ ¥23.8000 10+ ¥22.4000 更多的价格 | 5,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | TO-220SIS | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 20A (Ta) | DTMOSIV | 600 V | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | 45W (Tc) | - | ||
| 1+ ¥7.2000 5+ ¥6.8000 10+ ¥6.4000 更多的价格 | 1,350 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 7A (Ta) | DTMOSIV | 600 V | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | 60W (Tc) | - | ||
| 1+ ¥7.2000 5+ ¥6.8000 10+ ¥6.4000 更多的价格 | 663 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 8A (Ta) | DTMOSIV | 600 V | 10V | 560mOhm @ 4A, 10V | 4.5V @ 400µA | 22 nC @ 10 V | ±30V | 590 pF @ 300 V | 80W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | TO-220SIS | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 27.6A (Ta) | DTMOSIV | 650 V | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | 45W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | I2PAK | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 13.7A (Ta) | DTMOSIV | 650 V | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | 130W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | TO-220SIS | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 20A (Ta) | DTMOSIV | 600 V | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | 45W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 11.1A (Ta) | DTMOSIV | 650 V | 10V | 440mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | 100W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-3PL | N-Channel | TO-3P(L) | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 100A (Ta) | DTMOSIV | 600 V | 10V | 18mOhm @ 50A, 10V | 3.7V @ 5mA | 360 nC @ 10 V | ±30V | 15000 pF @ 30 V | 797W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 9.7A (Ta) | DTMOSIV | 600 V | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | 80W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | N-Channel | TO-220 | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 13.7A (Ta) | DTMOSIV | 650 V | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | 130W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | TO-220SIS | 150°C | - | MOSFET (Metal Oxide) | - | 6.5A (Ta) | DTMOSIV | 800 V | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | 35W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 Full Pack | N-Channel | TO-220SIS | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 38.8A (Ta) | DTMOSIV | 600 V | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110 nC @ 10 V | ±30V | 4100 pF @ 300 V | 50W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | DPAK | 150°C | - | MOSFET (Metal Oxide) | - | 11.5A (Ta) | DTMOSIV | 600 V | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | 100W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-3P-3, SC-65-3 | N-Channel | TO-3P(N) | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 15.8A (Ta) | DTMOSIV | 600 V | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | 130W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | I2PAK | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 20A (Ta) | DTMOSIV | 600 V | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | 165W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | I2PAK | 150°C (TJ) | MOSFET (Metal Oxide) | - | 15.8A (Ta) | DTMOSIV | 600 V | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | 130W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | I2PAK | 150°C (TJ) | - | MOSFET (Metal Oxide) | - | 13.7A (Ta) | DTMOSIV | 650 V | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | 130W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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