Depletion 系列, 单 FET,MOSFET

结果:
62
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Technology
Vgs (Max)
FET Feature
Grade
Qualification
结果62
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Depletion
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图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTP6N50D2
MOSFET N-CH 500V 6A TO220AB
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
6A (Tc)
-
Depletion
500 V
-
500mOhm @ 3A, 0V
96 nC @ 5 V
±20V
2800 pF @ 25 V
300W (Tc)
-
IXTP6N100D2
MOSFET N-CH 1000V 6A TO220AB
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
6A (Tc)
-
Depletion
1000 V
-
2.2Ohm @ 3A, 0V
95 nC @ 5 V
±20V
2650 pF @ 25 V
300W (Tc)
-
IXTH16N10D2
MOSFET N-CH 100V 16A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
16A (Tc)
-
Depletion
100 V
0V
64mOhm @ 8A, 0V
225 nC @ 5 V
±20V
5700 pF @ 25 V
830W (Tc)
-
IXTH2N170D2
MOSFET N-CH 1700V 2A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
2A (Tj)
-
Depletion
1700 V
0V
6.5Ohm @ 1A, 0V
110 nC @ 5 V
±20V
3650 pF @ 10 V
568W (Tc)
-
IXTT20N50D
MOSFET N-CH 500V 20A TO268
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780 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
20A (Tc)
3.5V @ 250mA
Depletion
500 V
10V
330mOhm @ 10A, 10V
125 nC @ 10 V
±30V
2500 pF @ 25 V
400W (Tc)
-
IXTU01N100D
MOSFET N-CH 1000V 400MA TO251
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2,900 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
TO-251AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
400mA (Tc)
4.5V @ 25µA
Depletion
1000 V
0V
80Ohm @ 50mA, 0V
5.8 nC @ 5 V
±20V
100 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTT16N50D2
MOSFET N-CH 500V 16A TO268
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
16A (Tc)
-
Depletion
500 V
0V
240mOhm @ 8A, 0V
199 nC @ 5 V
±20V
5250 pF @ 25 V
695W (Tc)
-
IXTH20N50D
MOSFET N-CH 500V 20A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
20A (Tc)
-
Depletion
500 V
10V
330mOhm @ 10A, 10V
125 nC @ 10 V
±30V
2500 pF @ 25 V
400W (Tc)
-
IXTA3N100D2
MOSFET N-CH 1000V 3A TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
3A (Tc)
-
Depletion
1000 V
-
5.5Ohm @ 1.5A, 0V
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
125W (Tc)
-
IXTA1R6N50D2
MOSFET N-CH 500V 1.6A TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
1.6A (Tc)
-
Depletion
500 V
10V
2.3Ohm @ 800mA, 0V
23.7 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTP1R6N50D2
MOSFET N-CH 500V 1.6A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
1.6A (Tc)
-
Depletion
500 V
-
2.3Ohm @ 800mA, 0V
23.7 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTH10N100D2
MOSFET N-CH 1000V 10A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
10A (Tc)
-
Depletion
1000 V
10V
1.5Ohm @ 5A, 10V
200 nC @ 5 V
±20V
5320 pF @ 25 V
695W (Tc)
-
IXTA1N170DHV
MOSFET N-CH 1700V 1A TO263
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580 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263HV
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
1A (Tc)
-
Depletion
1700 V
10V
16Ohm @ 500mA, 0V
47 nC @ 5 V
±20V
3090 pF @ 25 V
290W (Tc)
-
IXTA6N50D2
MOSFET N-CH 500V 6A TO263
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322 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
6A (Tc)
-
Depletion
500 V
-
500mOhm @ 3A, 0V
96 nC @ 5 V
±20V
2800 pF @ 25 V
300W (Tc)
-
IXTA6N100D2
MOSFET N-CH 1000V 6A TO263
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
6A (Tc)
-
Depletion
1000 V
-
2.2Ohm @ 3A, 0V
95 nC @ 5 V
±20V
2650 pF @ 25 V
300W (Tc)
-
IXTH6N50D2
MOSFET N-CH 500V 6A TO247
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
6A (Tc)
-
Depletion
500 V
-
500mOhm @ 3A, 0V
96 nC @ 5 V
±20V
2800 pF @ 25 V
300W (Tc)
-
IXTA08N50D2
MOSFET N-CH 500V 800MA TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
800mA (Tc)
-
Depletion
500 V
-
4.6Ohm @ 400mA, 0V
12.7 nC @ 5 V
±20V
312 pF @ 25 V
60W (Tc)
-
IXTP3N100D2
MOSFET N-CH 1000V 3A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
3A (Tc)
-
Depletion
1000 V
-
5.5Ohm @ 1.5A, 0V
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
125W (Tc)
-
IXTY1R6N50D2
MOSFET N-CH 500V 1.6A TO252
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31,518 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
1.6A (Tc)
-
Depletion
500 V
-
2.3Ohm @ 800mA, 0V
23.7 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTA1R6N100D2
MOSFET N-CH 1000V 1.6A TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-
MOSFET (Metal Oxide)
Depletion Mode
1.6A (Tc)
-
Depletion
1000 V
10V
10Ohm @ 800mA, 0V
27 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。