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CoolMOS™ P6 系列, 单 FET，MOSFET
结果:
48
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
结果：48
搜索条目:
CoolMOS™ P6
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Grade | Package / Case | Technology | FET Feature | Supplier Device Package | Series | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | MOSFET (Metal Oxide) | - | PG-TO263-3-1 | CoolMOS™ P6 | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | 126W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | - | PG-TO263-3 | CoolMOS™ P6 | 600 V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22 nC @ 10 V | ±20V | 1010 pF @ 100 V | 93W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | - | PG-TO263-3 | CoolMOS™ P6 | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | 63W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | - | PG-TO263-3 | CoolMOS™ P6 | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | 171W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | - | PG-TO263-3 | CoolMOS™ P6 | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37 nC @ 10 V | ±20V | 1750 pF @ 100 V | 151W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-220-3 Full Pack | MOSFET (Metal Oxide) | - | PG-TO220-FP | CoolMOS™ P6 | 600 V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22 nC @ 10 V | ±20V | 1010 pF @ 100 V | 32W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-220-3 | MOSFET (Metal Oxide) | - | PG-TO220-3 | CoolMOS™ P6 | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | 126W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-220-3 | MOSFET (Metal Oxide) | - | PG-TO220-3 | CoolMOS™ P6 | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | 83W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-220-3 | MOSFET (Metal Oxide) | - | PG-TO220-3 | CoolMOS™ P6 | 600 V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22 nC @ 10 V | ±20V | 1010 pF @ 100 V | 93W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-247-3 | MOSFET (Metal Oxide) | - | PG-TO247-3 | CoolMOS™ P6 | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | 126W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-247-3 | MOSFET (Metal Oxide) | - | PG-TO247-3 | CoolMOS™ P6 | 600 V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22 nC @ 10 V | ±20V | 1010 pF @ 100 V | 93W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | - | 4-PowerTSFN | MOSFET (Metal Oxide) | - | PG-VSON-4 | CoolMOS™ P6 | 600 V | 15.9A (Tc) | 10V | 255mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | 126W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | - | PG-TO252-3 | CoolMOS™ P6 | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | 83W (Tc) | - | ||
| 联系我们 | 5,626 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | - | PG-TO252-3 | CoolMOS™ P6 | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | - | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | 63W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | - | PG-TO263-3 | CoolMOS™ P6 | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | 83W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-220-3 | MOSFET (Metal Oxide) | - | PG-TO220-3 | CoolMOS™ P6 | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | 63W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-247-4 | MOSFET (Metal Oxide) | - | PG-TO247-4 | CoolMOS™ P6 | 600 V | 77.5A (Tc) | 10V | 41mOhm @ 35.5A, 10V | 4.5V @ 2.96mA | 170 nC @ 10 V | ±20V | 8180 pF @ 100 V | 481W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-247-4 | MOSFET (Metal Oxide) | - | PG-TO247-4 | CoolMOS™ P6 | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70 nC @ 10 V | ±20V | 3330 pF @ 100 V | 219W (Tc) | - | ||
 | 联系我们 | 15,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | - | PG-TO252-3 | CoolMOS™ P6 | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | 83W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | - | TO-220-3 Full Pack | MOSFET (Metal Oxide) | - | PG-TO220-FP | CoolMOS™ P6 | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | 33W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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