CoolMOS™ E6 系列, 单 FET,MOSFET

结果:
18
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果18
搜索条目:
CoolMOS™ E6
选择
图片产品详情单价可用性ECAD 模型Mounting TypeFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureOperating TemperatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPD60R380E6BTMA1
MOSFET N-CH 600V 10.6A TO252-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 155°C (TJ)
CoolMOS™ E6
600 V
10.6A (Tc)
10V
380mOhm @ 3.8A, 10V
3.5V @ 300µA
32 nC @ 10 V
±20V
700 pF @ 100 V
83W (Tc)
-
IPD60R380E6ATMA2
MOSFET N-CH 600V 10.6A TO252-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
600 V
10.6A (Tc)
10V
380mOhm @ 3.8A, 10V
3.5V @ 300µA
32 nC @ 10 V
±20V
700 pF @ 100 V
83W (Tc)
-
IPB65R280E6ATMA1
MOSFET N-CH 650V 13.8A D2PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
104W (Tc)
-
IPL65R310E6AUMA1
MOSFET N-CH 650V 13.1A THIN-PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
-40°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
13.1A (Tc)
10V
310mOhm @ 4.4A, 10V
3.5V @ 400µA
45 nC @ 10 V
±20V
950 pF @ 100 V
104W (Tc)
-
IPL65R190E6AUMA1
MOSFET N-CH 650V 20.2A 4VSON
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
-40°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
20.2A (Tc)
10V
190mOhm @ 7.3A, 10V
3.5V @ 700µA
73 nC @ 10 V
±20V
1620 pF @ 100 V
151W (Tc)
-
IPS65R600E6AKMA1
MOSFET N-CH 650V 7.3A TO251-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-251-3 Stub Leads, IPak
-
PG-TO251-3-11
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
7.3A (Tc)
10V
600mOhm @ 2.1A, 10V
3.5V @ 210µA
23 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPI65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO262-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
-
PG-TO262-3-1
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
104W (Tc)
-
IPL65R420E6AUMA1
MOSFET N-CH 650V 10.1A THIN-PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
-40°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
10.1A (Tc)
10V
420mOhm @ 3.4A, 10V
3.5V @ 300µA
39 nC @ 10 V
±20V
710 pF @ 100 V
83W (Tc)
-
IPL65R660E6AUMA1
MOSFET N-CH 650V 7A THIN-PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
-40°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
7A (Tc)
10V
660mOhm @ 2.1A, 10V
3.5V @ 200µA
23 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD60R750E6ATMA1
MOSFET N-CH 600V 5.7A TO252-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
600 V
5.7A (Tc)
10V
750mOhm @ 2A, 10V
3.5V @ 170µA
17.2 nC @ 10 V
±20V
373 pF @ 100 V
48W (Tc)
-
IPD65R600E6ATMA1
MOSFET N-CH 650V 7.3A TO252-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
7.3A (Tc)
10V
600mOhm @ 2.1A, 10V
3.5V @ 210µA
23 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD60R450E6ATMA1
MOSFET N-CH 600V 9.2A TO252-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
600 V
9.2A (Tc)
10V
450mOhm @ 3.4A, 10V
3.5V @ 280µA
28 nC @ 10 V
±20V
620 pF @ 100 V
74W (Tc)
-
IPD65R250E6XTMA1
MOSFET N-CH 650V 16.1A TO252-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
16.1A (Tc)
10V
250mOhm @ 4.4A, 10V
3.5V @ 400µA
45 nC @ 10 V
±20V
950 pF @ 1000 V
208W (Tc)
-
IPD60R600E6
MOSFET N-CH 600V 7.3A TO252-3
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25,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD60R450E6BTMA1
MOSFET N-CH 600V 9.2A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
600 V
9.2A (Tc)
10V
450mOhm @ 3.4A, 10V
3.5V @ 280µA
28 nC @ 10 V
±20V
620 pF @ 100 V
74W (Tc)
-
IPD60R750E6BTMA1
MOSFET N-CH 600V 5.7A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
600 V
5.7A (Tc)
10V
750mOhm @ 2A, 10V
3.5V @ 170µA
17.2 nC @ 10 V
±20V
373 pF @ 100 V
48W (Tc)
-
IPD65R380E6ATMA1
MOSFET N-CH 650V 10.6A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-55°C ~ 150°C (TJ)
CoolMOS™ E6
650 V
10.6A (Tc)
10V
380mOhm @ 3.2A, 10V
3.5V @ 320µA
39 nC @ 10 V
±20V
710 pF @ 100 V
83W (Tc)
-
IPD60R600E6ATMA1
MOSFET N-CH 600V 7.3A TO252
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
-
CoolMOS™ E6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。