CoolMOS™ CFD7 系列, 单 FET,MOSFET

结果:
78
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Operating Temperature
FET Type
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Technology
结果78
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CoolMOS™ CFD7
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypeGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
IPT60R125CFD7XTMA1
MOSFET N-CH 600V 21A 8HSOF
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
21A (Tc)
CoolMOS™ CFD7
600 V
10V
125mOhm @ 6.8A, 10V
4.5V @ 340µA
31 nC @ 10 V
±20V
1330 pF @ 400 V
127W (Tc)
PG-HSOF-8-1
8-PowerSFN
-
IPA60R280CFD7XKSA1
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
6A (Tc)
CoolMOS™ CFD7
650 V
10V
280mOhm @ 3.6A, 10V
4.5V @ 180µA
18 nC @ 10 V
±20V
807 pF @ 400 V
24W (Tc)
PG-TO220-FP
TO-220-3 Full Pack
-
IPD60R280CFD7ATMA1
MOSFET N-CH 600V 9A TO252-3
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80,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
9A (Tc)
CoolMOS™ CFD7
600 V
10V
280mOhm @ 3.6A, 10V
4.5V @ 180µA
18 nC @ 10 V
±20V
807 pF @ 400 V
51W (Tc)
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
-
IPD60R210CFD7ATMA1
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
12A (Tc)
CoolMOS™ CFD7
600 V
10V
210mOhm @ 4.9A, 10V
4.5V @ 240µA
23 nC @ 10 V
±20V
1015 pF @ 400 V
64W (Tc)
TO-252AA (DPAK)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
IPA60R170CFD7XKSA1
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
8A (Tc)
CoolMOS™ CFD7
650 V
10V
170mOhm @ 6A, 10V
4.5V @ 300µA
28 nC @ 10 V
±20V
1199 pF @ 400 V
26W (Tc)
PG-TO220-FP
TO-220-3 Full Pack
-
IPP65R090CFD7XKSA1
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
25A (Tc)
CoolMOS™ CFD7
650 V
10V
90mOhm @ 12.5A, 10V
4.5V @ 630µA
53 nC @ 10 V
±20V
2513 pF @ 400 V
127W (Tc)
PG-TO220-3
TO-220-3
-
IPP60R280CFD7XKSA1
MOSFET N-CH 650V 9A TO220-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
9A (Tc)
CoolMOS™ CFD7
650 V
10V
280mOhm @ 3.6A, 10V
4.5V @ 180µA
18 nC @ 10 V
±20V
807 pF @ 400 V
52W (Tc)
PG-TO220-3
TO-220-3
-
IPP65R155CFD7XKSA1
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
15A (Tc)
CoolMOS™ CFD7
650 V
10V
155mOhm @ 6.4A, 10V
4.5V @ 320µA
28 nC @ 10 V
±20V
1283 pF @ 400 V
77W (Tc)
PG-TO220-3
TO-220-3
-
IPP65R110CFD7XKSA1
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
22A (Tc)
CoolMOS™ CFD7
650 V
10V
110mOhm @ 9.7A, 10V
4.5V @ 480µA
41 nC @ 10 V
±20V
1942 pF @ 400 V
114W (Tc)
PG-TO220-3
TO-220-3
-
IPP60R105CFD7XKSA1
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
21A (Tc)
CoolMOS™ CFD7
600 V
10V
105mOhm @ 9.3A, 10V
4.5V @ 470µA
42 nC @ 10 V
±20V
1752 pF @ 400 V
106W (Tc)
PG-TO220-3
TO-220-3
-
IPZA65R029CFD7XKSA1
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
69A (Tc)
CoolMOS™ CFD7
650 V
10V
29mOhm @ 35.8A, 10V
4.5V @ 1.79mA
145 nC @ 10 V
±20V
7149 pF @ 400 V
305W (Tc)
PG-TO247-4-3
TO-247-4
-
IPD60R360CFD7ATMA1
MOSFET N-CH 600V 7A TO252-3-313
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
7A (Tc)
CoolMOS™ CFD7
600 V
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
14 nC @ 10 V
±20V
679 pF @ 400 V
43W (Tc)
PG-TO252-3-313
TO-252-3, DPak (2 Leads + Tab), SC-63
-
IPT60R105CFD7XTMA1
MOSFET N-CH 600V 24A 8HSOF
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
24A (Tc)
CoolMOS™ CFD7
600 V
10V
105mOhm @ 7.8A, 10V
4.5V @ 390µA
36 nC @ 10 V
±20V
1503 pF @ 400 V
140W (Tc)
PG-HSOF-8-1
8-PowerSFN
-
IPDD60R170CFD7XTMA1
MOSFET N-CH 600V 19A HDSOP-10
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
19A (Tc)
CoolMOS™ CFD7
600 V
-
170mOhm @ 4.9A, 10V
4.5V @ 240µA
23 nC @ 10 V
±20V
1016 pF @ 400 V
137W (Tc)
PG-HDSOP-10-1
10-PowerSOP Module
-
IPDD60R105CFD7XTMA1
MOSFET N-CH 600V 31A HDSOP-10
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
31A (Tc)
CoolMOS™ CFD7
600 V
-
105mOhm @ 7.8A, 10V
4.5V @ 390µA
36 nC @ 10 V
±20V
1504 pF @ 400 V
198W (Tc)
PG-HDSOP-10-1
10-PowerSOP Module
-
IPB60R090CFD7ATMA1
MOSFET N-CH 600V 25A TO263-3
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4,317 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
25A (Tc)
CoolMOS™ CFD7
600 V
10V
90mOhm @ 11.4A, 10V
4.5V @ 570µA
51 nC @ 10 V
±20V
2103 pF @ 400 V
124W (Tc)
PG-TO263-3-2
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
IPW60R070CFD7XKSA1
MOSFET N-CH 650V 31A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
31A (Tc)
CoolMOS™ CFD7
650 V
10V
70mOhm @ 15.1A, 10V
4.5V @ 760µA
67 nC @ 10 V
±20V
2721 pF @ 400 V
156W (Tc)
PG-TO247-3-21
TO-247-3
-
IPL60R185CFD7AUMA1
MOSFET N-CH 600V 14A 4VSON
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
14A (Tc)
CoolMOS™ CFD7
600 V
10V
185mOhm @ 6A, 10V
4.5V @ 300µA
28 nC @ 10 V
±20V
1199 pF @ 400 V
85W (Tc)
PG-VSON-4
4-PowerTSFN
-
IPB65R155CFD7ATMA1
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
15A (Tc)
CoolMOS™ CFD7
650 V
10V
155mOhm @ 6.4A, 10V
4.5V @ 320µA
28 nC @ 10 V
±20V
1283 pF @ 400 V
77W (Tc)
PG-TO263-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
IPB65R090CFD7ATMA1
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10 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
25A (Tc)
CoolMOS™ CFD7
650 V
10V
90mOhm @ 12.5A, 10V
4.5V @ 630µA
53 nC @ 10 V
±20V
2513 pF @ 400 V
127W (Tc)
PG-TO263-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。