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CoolMOS™ CE 系列, 单 FET，MOSFET
结果:
106
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
结果：106
搜索条目:
CoolMOS™ CE
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Technology | Supplier Device Package | FET Feature | Series | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -40°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | PG-TO251-3 | - | CoolMOS™ CE | 700 V | 10.5A (Tj) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22 nC @ 10 V | ±20V | 474 pF @ 100 V | 86W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -40°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | PG-TO251-3 | - | CoolMOS™ CE | 600 V | 13.1A (Tj) | 10V | 460mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28 nC @ 10 V | ±20V | 620 pF @ 100 V | 102W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | PG-TO251-3 | - | CoolMOS™ CE | 500 V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | 18W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ CE | 700 V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | 68W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -40°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-FP | - | CoolMOS™ CE | 700 V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22 nC @ 10 V | ±20V | 474 pF @ 100 V | 86W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -40°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-FP | - | CoolMOS™ CE | 700 V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | 68W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3-11 | - | CoolMOS™ CE | 500 V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | ±20V | 433 pF @ 100 V | 57W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ CE | 600 V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | 82W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ CE | 700 V | 4A (Tc) | 10V | 2Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8 nC @ 10 V | ±20V | 163 pF @ 100 V | 42W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ CE | 700 V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22 nC @ 10 V | ±20V | 474 pF @ 100 V | 86W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | PG-TO251-3 | - | CoolMOS™ CE | 500 V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 8.2 nC @ 10 V | ±20V | 178 pF @ 100 V | 42W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | PG-TO251-3 | - | CoolMOS™ CE | 500 V | 2.4A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6 nC @ 10 V | ±20V | 124 pF @ 100 V | 33W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | PG-TO251-3 | - | CoolMOS™ CE | 500 V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | 26W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | PG-TO251-3 | - | CoolMOS™ CE | 500 V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | 53W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | PG-TO251-3-341 | - | CoolMOS™ CE | 800 V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31 nC @ 10 V | ±20V | 785 pF @ 100 V | 83W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3-11 | - | CoolMOS™ CE | 500 V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | 92W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3-11 | - | CoolMOS™ CE | 500 V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | 34W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ CE | 500 V | 5A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4 nC @ 10 V | ±20V | 280 pF @ 100 V | 40W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ CE | 500 V | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15 nC @ 10 V | ±20V | 342 pF @ 100 V | 47W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ CE | 500 V | 14.1A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | 73W (Tc) |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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