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CoolMOS™ C7 系列, 单 FET，MOSFET
结果:
71
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果：71
搜索条目:
CoolMOS™ C7
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Grade | Technology | Supplier Device Package | FET Feature | Series | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 650 V | - | MOSFET (Metal Oxide) | PG-TO263-3 | - | CoolMOS™ C7 | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | 72W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | 600 V | - | MOSFET (Metal Oxide) | PG-TO220-3-1 | - | CoolMOS™ C7 | 13A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24 nC @ 10 V | ±20V | 1080 pF @ 400 V | 68W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | 600 V | - | MOSFET (Metal Oxide) | PG-TO220-FP | - | CoolMOS™ C7 | 11A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | 32W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | 650 V | - | MOSFET (Metal Oxide) | PG-TO247-3 | - | CoolMOS™ C7 | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93 nC @ 10 V | ±20V | 4340 pF @ 400 V | 227W (Tc) | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 650 V | - | MOSFET (Metal Oxide) | PG-TO263-3 | - | CoolMOS™ C7 | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | 63W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 650 V | - | MOSFET (Metal Oxide) | PG-TO263-3 | - | CoolMOS™ C7 | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93 nC @ 10 V | ±20V | 4340 pF @ 400 V | 227W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 650 V | - | MOSFET (Metal Oxide) | PG-TO263-3 | - | CoolMOS™ C7 | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | 128W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 650 V | - | MOSFET (Metal Oxide) | PG-TO263-3 | - | CoolMOS™ C7 | 18A (Ta) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | 101W (Tc) | - | ||
 | 联系我们 | 3,394 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 4-PowerTSFN | 600 V | - | MOSFET (Metal Oxide) | PG-VSON-4 | - | CoolMOS™ C7 | 17A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | 103W (Tc) | - | ||
 | 联系我们 | 6,512 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | 650 V | - | MOSFET (Metal Oxide) | PG-TO220-3 | - | CoolMOS™ C7 | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | 72W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-4 | 650 V | - | MOSFET (Metal Oxide) | PG-TO247-4 | - | CoolMOS™ C7 | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | 446W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | 600 V | - | MOSFET (Metal Oxide) | PG-TO220-3 | - | CoolMOS™ C7 | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | 92W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-4 | 650 V | - | MOSFET (Metal Oxide) | PG-TO247-4 | - | CoolMOS™ C7 | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64 nC @ 10 V | ±20V | 3020 pF @ 400 V | 171W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | 600 V | - | MOSFET (Metal Oxide) | PG-TO220 Full Pack | - | CoolMOS™ C7 | 9A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24 nC @ 10 V | ±20V | 1080 pF @ 400 V | 29W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | 650 V | - | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ C7 | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | 63W (Tc) | - | ||
| 联系我们 | 3,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 4-PowerTSFN | 650 V | - | MOSFET (Metal Oxide) | PG-VSON-4 | - | CoolMOS™ C7 | 10A (Tc) | 10V | 230mOhm @ 2.4A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | 67W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | 650 V | - | MOSFET (Metal Oxide) | PG-TO252-3 | - | CoolMOS™ C7 | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | 72W (Tc) | - | ||
| 联系我们 | 3,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 4-PowerTSFN | 600 V | - | MOSFET (Metal Oxide) | PG-VSON-4 | - | CoolMOS™ C7 | 13A (Tc) | 10V | 185mOhm @ 5.3A, 10V | 4V @ 260µA | 24 nC @ 10 V | ±20V | 1080 pF @ 400 V | 77W (Tc) | - | ||
 | 联系我们 | 918 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 650 V | - | MOSFET (Metal Oxide) | PG-TO263-3 | - | CoolMOS™ C7 | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | 72W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 8-PowerSFN | 650 V | - | MOSFET (Metal Oxide) | PG-HSOF-8-2 | - | CoolMOS™ C7 | 14A (Tc) | 10V | 195mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | 97W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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