CoolMOS™ C6 系列, 单 FET,MOSFET

结果:
34
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果34
搜索条目:
CoolMOS™ C6
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypePackage / CaseGradeTechnologySupplier Device PackageFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPB60R950C6ATMA1
MOSFET N-CH 600V 4.4A D2PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
PG-TO263-3
-
4.4A (Tc)
CoolMOS™ C6
600 V
10V
950mOhm @ 1.5A, 10V
3.5V @ 130µA
13 nC @ 10 V
±20V
280 pF @ 100 V
37W (Tc)
-
IPD60R520C6BTMA1
MOSFET N-CH 600V 8.1A TO252-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
8.1A (Tc)
CoolMOS™ C6
600 V
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4 nC @ 10 V
±20V
512 pF @ 100 V
66W (Tc)
-
IPB60R600C6ATMA1
MOSFET N-CH 600V 7.3A D2PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
PG-TO263-3
-
7.3A (Tc)
CoolMOS™ C6
600 V
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPL60R2K1C6SATMA1
MOSFET N-CH 600V 2.3A THIN-PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
MOSFET (Metal Oxide)
PG-TSON-8-2
-
2.3A (Tc)
CoolMOS™ C6
600 V
10V
2.1Ohm @ 760mA, 10V
3.5V @ 60µA
6.7 nC @ 10 V
±20V
140 pF @ 100 V
21.6W (Tc)
-
IPU60R1K4C6AKMA1
MOSFET N-CH 600V 3.2A TO251-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
PG-TO251-3
-
3.2A (Tc)
CoolMOS™ C6
600 V
10V
1.4Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4 nC @ 10 V
±20V
200 pF @ 100 V
28.4W (Tc)
-
IPU60R950C6AKMA1
MOSFET N-CH 600V 4.4A TO251-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
PG-TO251-3
-
4.4A (Tc)
CoolMOS™ C6
600 V
10V
950mOhm @ 1.5A, 10V
3.5V @ 130µA
13 nC @ 10 V
±20V
280 pF @ 100 V
37W (Tc)
-
IPU60R600C6AKMA1
MOSFET N-CH 600V 7.3A TO251-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
PG-TO251-3
-
7.3A (Tc)
CoolMOS™ C6
600 V
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD60R520C6ATMA1
MOSFET N-CH 600V 8.1A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
8.1A (Tc)
CoolMOS™ C6
600 V
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4 nC @ 10 V
±20V
512 pF @ 100 V
66W (Tc)
-
IPD60R600C6ATMA1
MOSFET N-CH 600V 7.3A TO252-3
联系我们
7,500 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
7.3A (Tc)
CoolMOS™ C6
600 V
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD65R1K4C6ATMA1
MOSFET N-CH 650V 3.2A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
3.2A (Tc)
CoolMOS™ C6
650 V
10V
1.4Ohm @ 1A, 10V
3.5V @ 100µA
10.5 nC @ 10 V
±20V
225 pF @ 100 V
28W (Tc)
-
IPD60R950C6ATMA1
MOSFET N-CH 600V 4.4A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
4.4A (Tc)
CoolMOS™ C6
600 V
10V
950mOhm @ 1.5A, 10V
3.5V @ 130µA
13 nC @ 10 V
±20V
280 pF @ 100 V
37W (Tc)
-
IPB60R125C6ATMA1
MOSFET N-CH 600V 30A D2PAK
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
PG-TO263-3
-
30A (Tc)
CoolMOS™ C6
600 V
10V
125mOhm @ 14.5A, 10V
3.5V @ 960µA
96 nC @ 10 V
±20V
2127 pF @ 100 V
219W (Tc)
-
IPB60R380C6ATMA1
MOSFET N-CH 600V 10.6A D2PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
PG-TO263-3
-
10.6A (Tc)
CoolMOS™ C6
600 V
10V
380mOhm @ 3.8A, 10V
3.5V @ 320µA
32 nC @ 10 V
±20V
700 pF @ 100 V
83W (Tc)
-
IPD60R2K0C6ATMA1
MOSFET N-CH 600V 2.4A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
2.4A (Tc)
CoolMOS™ C6
600 V
10V
2Ohm @ 760mA, 10V
3.5V @ 60µA
6.7 nC @ 10 V
±20V
140 pF @ 100 V
22.3W (Tc)
-
IPB60R190C6ATMA1
MOSFET N-CH 600V 20.2A D2PAK
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4,950 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
PG-TO263-3
-
20.2A (Tc)
CoolMOS™ C6
600 V
10V
190mOhm @ 9.5A, 10V
3.5V @ 630µA
63 nC @ 10 V
±20V
1400 pF @ 100 V
151W (Tc)
-
IPD60R2K0C6BTMA1
MOSFET N-CH 600V 2.4A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
2.4A (Tc)
CoolMOS™ C6
600 V
10V
2Ohm @ 760mA, 10V
3.5V @ 60µA
6.7 nC @ 10 V
±20V
140 pF @ 100 V
22.3W (Tc)
-
IPD60R3K3C6
MOSFET N-CH 600V 1.7A TO252-3
联系我们
3,392 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
1.7A (Tc)
CoolMOS™ C6
600 V
10V
3.3Ohm @ 500mA, 10V
3.5V @ 40µA
4.6 nC @ 10 V
±20V
93 pF @ 100 V
18.1W (Tc)
-
IPD60R1K4C6
MOSFET N-CH 600V 3.2A TO252-3
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22,433 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
3.2A (Tc)
CoolMOS™ C6
600 V
10V
1.4Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4 nC @ 10 V
±20V
200 pF @ 100 V
28.4W (Tc)
-
IPD60R380C6
MOSFET N-CH 600V 10.6A TO252-3
联系我们
3,197 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
10.6A (Tc)
CoolMOS™ C6
600 V
10V
380mOhm @ 3.8A, 10V
3.5V @ 320µA
32 nC @ 10 V
±20V
700 pF @ 100 V
83W (Tc)
-
IPD60R600C6BTMA1
MOSFET N-CH 600V 7.3A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
-
7.3A (Tc)
CoolMOS™ C6
600 V
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。