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aMOS™ Series, 单 FET，MOSFET
结果:
79
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
结果：79
搜索条目:
aMOS™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Grade | Supplier Device Package | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Series | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 1+ $1.8000 5+ $1.7000 10+ $1.6000 更多的价格 | 11,920 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (DPAK) | MOSFET (Metal Oxide) | - | 11A (Tc) | aMOS™ | 600 V | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11 nC @ 10 V | ±30V | 545 pF @ 100 V | 208W (Tc) | - | ||
 | 1+ $8.2800 5+ $7.8200 10+ $7.3600 更多的价格 | 10,824 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | - | TO-220F | MOSFET (Metal Oxide) | - | 15A (Tc) | aMOS™ | 600 V | 10V | 290mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6 nC @ 10 V | ±30V | 717 pF @ 100 V | 27.8W (Tc) | - | ||
 | 1+ $1.8000 5+ $1.7000 10+ $1.6000 更多的价格 | 4,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | MOSFET (Metal Oxide) | - | 4A (Tc) | aMOS™ | 600 V | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6 nC @ 10 V | ±30V | 263 pF @ 100 V | 83W (Tc) | - | ||
 | 1+ $36.0000 5+ $34.0000 10+ $32.0000 更多的价格 | 2,441 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | - | TO-220 | MOSFET (Metal Oxide) | - | 27A (Tc) | aMOS™ | 600 V | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 1294 pF @ 100 V | 357W (Tc) | - | ||
 | 1+ $28.8000 5+ $27.2000 10+ $25.6000 更多的价格 | 1,454 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | TO-247 | MOSFET (Metal Oxide) | - | 53A (Tc) | aMOS™ | 600 V | 10V | 70mOhm @ 26.5A, 10V | 3.8V @ 250µA | 59 nC @ 10 V | ±30V | 3034 pF @ 100 V | 520W (Tc) | - | ||
 | 1+ $37.8000 5+ $35.7000 10+ $33.6000 更多的价格 | 800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | MOSFET (Metal Oxide) | - | 25A (Tc) | aMOS™ | 650 V | 10V | 190mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4 nC @ 10 V | ±30V | 1278 pF @ 100 V | 357W (Tc) | - | ||
| 1+ $8.1000 5+ $7.6500 10+ $7.2000 更多的价格 | 630 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | - | TO-220 | MOSFET (Metal Oxide) | - | 15A (Tc) | aMOS™ | 600 V | 10V | 290mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6 nC @ 10 V | ±30V | 372 pF @ 100 V | 208W (Tc) | - | ||
 | 1+ $7.2000 5+ $6.8000 10+ $6.4000 更多的价格 | 450 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | - | TO-220F | MOSFET (Metal Oxide) | - | 11A (Tc) | aMOS™ | 600 V | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11 nC @ 10 V | ±30V | 545 pF @ 100 V | 38W (Tc) | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-247-3 | - | TO-247 | MOSFET (Metal Oxide) | - | 39A (Tc) | aMOS™ | 600 V | 10V | 99mOhm @ 21A, 10V | 3.8V @ 250µA | 40 nC @ 10 V | ±30V | 2154 pF @ 100 V | 417W (Tc) | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | MOSFET (Metal Oxide) | - | 27A (Tc) | aMOS™ | 600 V | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 1294 pF @ 100 V | 357W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | - | TO-220 | MOSFET (Metal Oxide) | - | 7A (Tc) | aMOS™ | 650 V | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2 nC @ 10 V | ±30V | 434 pF @ 100 V | 104W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | - | TO-251-3 | MOSFET (Metal Oxide) | - | 7A (Tc) | aMOS™ | 600 V | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | ±30V | 372 pF @ 100 V | 83W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (DPAK) | MOSFET (Metal Oxide) | - | 7A (Tc) | aMOS™ | 650 V | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2 nC @ 10 V | ±30V | 434 pF @ 100 V | 89W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | - | TO-220 | MOSFET (Metal Oxide) | - | 37A (Tc) | aMOS™ | 600 V | 10V | 99mOhm @ 21A, 10V | 3.8V @ 250µA | 40 nC @ 10 V | ±30V | 2154 pF @ 100 V | 417W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | - | TO-220F | MOSFET (Metal Oxide) | - | 39A | aMOS™ | 600 V | 10V | 99mOhm @ 21A, 10V | 3.8V @ 250µA | 40 nC @ 10 V | ±30V | 2154 pF @ 100 V | 50W | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | - | TO-220 | MOSFET (Metal Oxide) | - | 20A (Tc) | aMOS™ | 600 V | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8 nC @ 10 V | ±30V | 1038 pF @ 100 V | 266W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | - | TO-220 | MOSFET (Metal Oxide) | - | 11A (Tc) | aMOS™ | 600 V | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11 nC @ 10 V | ±30V | 545 pF @ 100 V | 178W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 8-VDFN Exposed Pad | 8-DFN (5x6) | MOSFET (Metal Oxide) | - | 23A (Ta), 47A (Tc) | aMOS™ | 30 V | 4.5V, 10V | 7.2mOhm @ 20A, 10V | 2.2V @ 250µA | 13 nC @ 10 V | ±20V | 840 pF @ 15 V | 6.2W (Ta), 26W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 8-VDFN Exposed Pad | 8-DFN (5x6) | MOSFET (Metal Oxide) | - | 23A (Ta), 47A (Tc) | aMOS™ | 30 V | 4.5V, 10V | 7.2mOhm @ 20A, 10V | 2.2V @ 250µA | 13 nC @ 10 V | ±20V | 840 pF @ 15 V | 6.2W (Ta), 26W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | - | TO-251-3 | MOSFET (Metal Oxide) | - | 7A (Tc) | aMOS™ | 600 V | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2 nC @ 10 V | ±30V | 434 pF @ 100 V | 89W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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