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AlphaSGT™ 系列, 单 FET，MOSFET
结果:
131
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Mounting Type
Technology
Vgs (Max)
FET Feature
Grade
Qualification
结果：131
搜索条目:
AlphaSGT™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Operating Temperature | Mounting Type | Technology | Package / Case | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Grade | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Series | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Qualification |
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 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | - | Through Hole | - | TO-220-3 | - | TO-220 | - | - | - | 122A (Tc) | - | - | - | AlphaSGT™ | - | - | - | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Surface Mount | MOSFET (Metal Oxide) | 8-PowerSMD, Flat Leads | N-Channel | 8-DFN (5x6) | 7790 pF @ 30 V | - | - | 100A (Tc) | 1.58mOhm @ 20A, 10V | 3.4V @ 250µA | 120 nC @ 10 V | AlphaSGT™ | 10V | ±20V | 60 V | 215W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Surface Mount | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | TO-252 | 3830 pF @ 20 V | - | - | 34.5A (Ta), 54A (Tc) | 3.1mOhm @ 20A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | AlphaSGT™ | 4.5V, 10V | ±20V | 40 V | 6.2W (Ta), 100W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | - | Surface Mount | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | - | - | - | 122A (Tc) | - | - | - | AlphaSGT™ | - | - | - | - | - | ||
 | 联系我们 | 969 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-220-3 Full Pack | N-Channel | TO-220F | 2870 pF @ 30 V | - | - | 38A (Ta), 72.5A (Tc) | 3.3mOhm @ 20A, 10V | 3.4V @ 250µA | 60 nC @ 10 V | AlphaSGT™ | 6V, 10V | ±20V | 60 V | 8.3W (Ta), 30W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | - | Surface Mount | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | - | - | - | 120A (Tc) | - | - | - | AlphaSGT™ | - | - | - | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | TO-262 | 2785 pF @ 50 V | - | - | 70A (Tc) | 9.7mOhm @ 20A, 10V | 3.4V @ 250µA | 52 nC @ 10 V | AlphaSGT™ | 6V, 10V | ±20V | 100 V | 104W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-251-3 Stub Leads, IPak | N-Channel | TO-251B | 1725 pF @ 50 V | - | - | 16.5A (Ta), 58A (Tc) | 11mOhm @ 20A, 10V | 2.6V @ 250µA | 35 nC @ 10 V | AlphaSGT™ | 4.5V, 10V | ±20V | 100 V | 6.2W (Ta), 73W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | TO-262F | 2785 pF @ 50 V | - | - | 37A (Tc) | 9.7mOhm @ 20A, 10V | 3.4V @ 250µA | 52 nC @ 10 V | AlphaSGT™ | 6V, 10V | ±20V | 100 V | 26W (Tc) | - | ||
 | 联系我们 | 8,855 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Surface Mount | MOSFET (Metal Oxide) | 8-PowerSMD, Flat Leads | N-Channel | 8-DFN (5x6) | 4525 pF @ 50 V | - | - | 48A (Tc) | 6.2mOhm @ 20A, 10V | 2.3V @ 250µA | 95 nC @ 10 V | AlphaSGT™ | 4.5V, 10V | ±20V | 100 V | 113.5W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-220-3 | N-Channel | TO-220 | 7085 pF @ 50 V | - | - | 120A (Tc) | 4.4mOhm @ 20A, 10V | 3.3V @ 250µA | 135 nC @ 10 V | AlphaSGT™ | 6V, 10V | ±20V | 100 V | 326W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-220-3 | N-Channel | TO-220 | 2500 pF @ 50 V | - | - | 22.5A (Ta), 80A (Tc) | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | AlphaSGT™ | 4.5V, 10V | ±20V | 100 V | 8.3W (Ta), 100W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-220-3 | N-Channel | TO-220 | 6180 pF @ 50 V | - | - | 35.5A (Ta), 120A (Tc) | 3.6mOhm @ 20A, 10V | 3.5V @ 250µA | 78 nC @ 10 V | AlphaSGT™ | 6V, 10V | ±20V | 100 V | 8.3W (Ta), 277W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-247-3 | N-Channel | TO-247 | 5300 pF @ 30 V | - | - | 58.5A (Ta), 120A (Tc) | 2.5mOhm @ 20A, 10V | 3.5V @ 250µA | 110 nC @ 10 V | AlphaSGT™ | 8V, 10V | ±20V | 60 V | 15.6W (Ta), 312W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | MOSFET (Metal Oxide) | 8-PowerSFN | N-Channel | TOLLA | 19180 pF @ 20 V | - | - | 82A (Ta), 400A (Tc) | 0.7mOhm @ 20A, 10V | 2.3V @ 250µA | 340 nC @ 10 V | AlphaSGT™ | 4.5V, 10V | ±20V | 40 V | 8.3W (Ta), 300W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Through Hole | MOSFET (Metal Oxide) | TO-220-3 | N-Channel | TO-220 | 6460 pF @ 75 V | - | - | 30A (Ta), 120A (Tc) | 5mOhm @ 20A, 10V | 3.7V @ 250µA | 115 nC @ 10 V | AlphaSGT™ | 8V, 10V | ±20V | 150 V | 10W (Ta), 375W (Tc) | - | ||
 | 联系我们 | 35,810 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | -55°C ~ 175°C (TJ) | Surface Mount | MOSFET (Metal Oxide) | 8-PowerSFN | N-Channel | TOLLA | 12500 pF @ 50 V | - | - | 49A (Ta), 380A (Tc) | 1.7mOhm @ 20A, 10V | 3.5V @ 250µA | 220 nC @ 10 V | AlphaSGT™ | 6V, 10V | ±20V | 100 V | 8.3W (Ta), 500W (Tc) | - | ||
 | 联系我们 | 200 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Surface Mount | MOSFET (Metal Oxide) | 8-SOIC (0.154", 3.90mm Width) | N-Channel | 8-SOIC | 2500 pF @ 50 V | - | - | 13.5A (Ta) | 8.5mOhm @ 13.5A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | AlphaSGT™ | 4.5V, 10V | ±20V | 100 V | 3.1W (Ta) | - | ||
| 联系我们 | 2,640 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Surface Mount | MOSFET (Metal Oxide) | 8-PowerSMD, Flat Leads | N-Channel | 8-DFN (5x6) | 5300 pF @ 30 V | - | - | 46A (Ta), 100A (Tc) | 1.65mOhm @ 20A, 10V | 3.5V @ 250µA | 110 nC @ 10 V | AlphaSGT™ | 6V, 10V | ±20V | 60 V | 6.2W (Ta), 208W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | -55°C ~ 150°C (TJ) | Surface Mount | MOSFET (Metal Oxide) | 8-PowerSMD, Flat Leads | N-Channel | 8-DFN (5x6) | 5940 pF @ 50 V | - | - | 100A (Tc) | 3.5mOhm @ 20A, 10V | 2.8V @ 250µA | 115 nC @ 10 V | AlphaSGT™ | 4.5V, 10V | ±20V | 100 V | 6.2W (Ta), 215W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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