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UltraFET™ Series, 单 FET，MOSFET
结果:
395
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
Vgs(th) (Max) @ Id
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
结果：395
搜索条目:
UltraFET™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Grade | Package / Case | Technology | Series | FET Feature | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 1+ $9.0000 5+ $8.5000 10+ $8.0000 更多的价格 | 35,800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerWDFN | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | 8-MLP (5x6), Power56 | 150 V | 4.5A (Ta), 27A (Tc) | 6V, 10V | 47mOhm @ 4.5A, 10V | 43 nC @ 10 V | ±20V | 2610 pF @ 75 V | 2.5W (Ta), 78W (Tc) | - | ||
 | 1+ $5.4000 5+ $5.1000 10+ $4.8000 更多的价格 | 32,005 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | UltraFET™ | - | 3V @ 250µA | TO-252AA | 60 V | 20A (Tc) | 4.5V, 10V | 37mOhm @ 20A, 10V | 27.5 nC @ 10 V | ±16V | 900 pF @ 25 V | 75W (Tc) | - | ||
 | 1+ $135.0000 5+ $127.5000 10+ $120.0000 更多的价格 | 26,216 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | 8-SOIC | 250 V | 3A (Ta) | 6V, 10V | 117mOhm @ 3A, 10V | 45 nC @ 10 V | ±20V | 2610 pF @ 100 V | 2.5W (Ta) | - | ||
 | 1+ $270.0000 5+ $255.0000 10+ $240.0000 更多的价格 | 16,800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | N-Channel | - | TO-220-3 | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-220-3 | 100 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 238 nC @ 20 V | ±20V | 3790 pF @ 25 V | 310W (Tc) | - | ||
 | 1+ $45.0000 5+ $42.5000 10+ $40.0000 更多的价格 | 12,849 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-263 (D2Pak) | 100 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 238 nC @ 20 V | ±20V | 3790 pF @ 25 V | 310W (Tc) | - | ||
 | 1+ $7.2000 5+ $6.8000 10+ $6.4000 更多的价格 | 11,450 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-263 (D2Pak) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | 200W (Tc) | - | ||
| 1+ $7.2000 5+ $6.8000 10+ $6.4000 更多的价格 | 11,450 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-263 (D2Pak) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | 200W (Tc) | - | ||
 | 1+ $32.4000 5+ $30.6000 10+ $28.8000 更多的价格 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-252AA | 55 V | 20A (Tc) | 10V | 36mOhm @ 20A, 10V | 44 nC @ 20 V | ±20V | 680 pF @ 25 V | 93W (Tc) | - | ||
| 1+ $14.4000 5+ $13.6000 10+ $12.8000 更多的价格 | 4,500 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | 8-SOIC | 200 V | 3.9A (Ta) | 6V, 10V | 70mOhm @ 3.9A, 10V | 46 nC @ 10 V | ±20V | 2535 pF @ 100 V | 2.5W (Ta) | - | ||
| 1+ $15.3000 5+ $14.4500 10+ $13.6000 更多的价格 | 3,512 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-263 (D2Pak) | 150 V | 43A (Tc) | 10V | 42mOhm @ 43A, 10V | 175 nC @ 20 V | ±20V | 2730 pF @ 25 V | 230W (Tc) | - | ||
| 1+ $15.3000 5+ $14.4500 10+ $13.6000 更多的价格 | 3,512 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-263 (D2Pak) | 150 V | 43A (Tc) | 10V | 42mOhm @ 43A, 10V | 175 nC @ 20 V | ±20V | 2730 pF @ 25 V | 230W (Tc) | - | ||
 | 1+ $54.0000 5+ $51.0000 10+ $48.0000 更多的价格 | 3,400 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | N-Channel | - | TO-247-3 | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-247-3 | 100 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 475 nC @ 20 V | ±20V | 7585 pF @ 25 V | 515W (Tc) | - | ||
| 1+ $23.4000 5+ $22.1000 10+ $20.8000 更多的价格 | 3,334 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerWDFN | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | 8-MLP (5x6), Power56 | 60 V | 10.6A (Ta), 22A (Tc) | 6V, 10V | 11.5mOhm @ 10.6A, 10V | 45 nC @ 10 V | ±20V | 2800 pF @ 30 V | 2.5W (Ta), 78W (Tc) | - | ||
| 1+ $25.2000 5+ $23.8000 10+ $22.4000 更多的价格 | 2,550 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | N-Channel | - | TO-220-3 | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-220-3 | 55 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 275 nC @ 20 V | ±20V | 4000 pF @ 25 V | 325W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | Automotive | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-252AA | 55 V | 20A (Tc) | 10V | 36mOhm @ 20A, 10V | 44 nC @ 20 V | ±20V | 680 pF @ 25 V | 93W (Tc) | AEC-Q101 | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | Automotive | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | SOT-223-4 | 55 V | 2.6A (Ta) | 10V | 90mOhm @ 2.6A, 10V | 17 nC @ 20 V | ±20V | 250 pF @ 25 V | 1.1W (Ta) | AEC-Q101 | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-263 (D2Pak) | 100 V | 56A (Tc) | - | 25mOhm @ 56A, 10V | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | 200W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | Automotive | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-263AB (D²PAK) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 130 nC @ 10 V | ±20V | 2000 pF @ 25 V | 200W (Tc) | AEC-Q101 | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | UltraFET™ | - | 3V @ 250µA | TO-252AA | 60 V | 20A (Tc) | 4.5V, 10V | 37mOhm @ 20A, 10V | 27.5 nC @ 10 V | ±16V | 900 pF @ 25 V | 75W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | N-Channel | Automotive | TO-247-3 | MOSFET (Metal Oxide) | UltraFET™ | - | 4V @ 250µA | TO-247-3 | 150 V | 75A (Tc) | 10V | 16mOhm @ 75A, 10V | 480 nC @ 20 V | ±20V | 7690 pF @ 25 V | 500W (Tc) | AEC-Q101 |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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