- 首页
- 产品索引
- 分立半导体产品
- 晶体管
- FET，MOSFET
- 单 FET，MOSFET
UltraFET® 系列, 单 FET，MOSFET
结果:
51
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Operating Temperature
Vgs(th) (Max) @ Id
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
结果：51
搜索条目:
UltraFET®
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Package / Case | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature | Grade | Technology | Series | FET Feature | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220-3 | N-Channel | 30 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 35A (Tc) | 4.5V, 10V | 22mOhm @ 35A, 10V | 27 nC @ 10 V | ±20V | 970 pF @ 15 V | 50W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | N-Channel | 100 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 10A (Tc) | 4.5V, 10V | 160mOhm @ 10A, 10V | 16 nC @ 10 V | ±16V | 425 pF @ 25 V | 49W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | N-Channel | 30 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 75A (Tc) | 4.5V, 10V | 6mOhm @ 75A, 10V | 90 nC @ 10 V | ±20V | 3400 pF @ 15 V | 125W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | N-Channel | 30 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 50A (Tc) | 4.5V, 10V | 6mOhm @ 50A, 10V | 90 nC @ 10 V | ±20V | 3400 pF @ 15 V | 125W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | N-Channel | 30 V | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 5.5A (Ta) | 4.5V, 10V | 50mOhm @ 5.5A, 10V | 11 nC @ 10 V | ±20V | 325 pF @ 25 V | 2.5W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | N-Channel | 30 V | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 1V @ 250µA | 10A (Ta) | 4.5V, 10V | 13mOhm @ 10A, 10V | 47 nC @ 10 V | ±20V | 1605 pF @ 25 V | 2.5W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 20A (Tc) | 4.5V, 10V | 37mOhm @ 20A, 10V | 27.5 nC @ 10 V | ±16V | 900 pF @ 25 V | 75W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | N-Channel | 30 V | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 1V @ 250µA | 10A (Ta) | 4.5V, 10V | 135mOhm @ 10A, 10V | 60 nC @ 10 V | ±16V | 1600 pF @ 25 V | 2.5W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | N-Channel | 30 V | -40°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 56A (Tc) | 4.5V, 10V | 16mOhm @ 56A, 10V | 45 nC @ 10 V | ±20V | 1350 pF @ 25 V | 105W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220AB | N-Channel | 30 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 75A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 105 nC @ 10 V | ±20V | 4075 pF @ 15 V | 145W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 35A (Tc) | 4.5V, 10V | 30mOhm @ 35A, 10V | 34 nC @ 10 V | ±16V | 1060 pF @ 25 V | 85W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220AB | N-Channel | 30 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 75A (Tc) | 4.5V, 10V | 6mOhm @ 75A, 10V | 90 nC @ 10 V | ±20V | 3400 pF @ 15 V | 125W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | N-Channel | 100 V | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 4V @ 250µA | 5.5A (Ta) | 10V | 39mOhm @ 5.5A, 10V | 79 nC @ 20 V | ±20V | 1225 pF @ 25 V | 2.5W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 20A (Tc) | 4.5V, 10V | 49mOhm @ 20A, 10V | 20 nC @ 10 V | ±16V | 645 pF @ 25 V | 60W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220AB | N-Channel | 20 V | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 20A (Tc) | 5V, 10V | 27mOhm @ 20A, 10V | 13 nC @ 10 V | ±20V | 470 pF @ 20 V | 41W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 20A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 46 nC @ 10 V | ±16V | 1480 pF @ 25 V | 110W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220-3 | N-Channel | 200 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 4V @ 250µA | 11A (Tc) | 10V | 275mOhm @ 11A, 10V | 78 nC @ 20 V | ±20V | 1030 pF @ 25 V | 100W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220AB | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 71A (Tc) | 4.5V, 10V | 14mOhm @ 71A, 10V | 71 nC @ 10 V | ±16V | 2230 pF @ 25 V | 155W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | N-Channel | 30 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 3V @ 250µA | 75A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 105 nC @ 10 V | ±20V | 4075 pF @ 15 V | 145W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | N-Channel | 30 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | UltraFET® | - | 4V @ 250µA | 35A (Tc) | 10V | 7mOhm @ 35A, 10V | 258 nC @ 20 V | ±20V | 5600 pF @ 25 V | 100W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
需要快速报价吗?
告诉我们您在找什么？