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U-MOSIII 系列, 单 FET，MOSFET
结果:
38
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Gate Charge (Qg) (Max) @ Vgs
Package / Case
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Drain to Source Voltage (Vdss)
Vgs (Max)
FET Feature
FET Type
Mounting Type
Grade
Qualification
Technology
结果：38
搜索条目:
U-MOSIII
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Package / Case | Operating Temperature | Drain to Source Voltage (Vdss) | Grade | Supplier Device Package | Technology | Series | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 联系我们 | 1,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | P-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | 150°C | 60 V | - | PW-MOLD | MOSFET (Metal Oxide) | U-MOSIII | - | 5A (Ta) | 2V @ 1mA | 4V, 10V | 170mOhm @ 2.5A, 10V | 15 nC @ 10 V | ±20V | 700 pF @ 10 V | 20W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | P-Channel | TO-236-3, SC-59, SOT-23-3 | 150°C (TJ) | 20 V | - | TSM | MOSFET (Metal Oxide) | U-MOSIII | - | 2.3A (Ta) | - | 1.8V, 4V | 127mOhm @ 1A, 4V | 6.1 nC @ 4 V | ±8V | 335 pF @ 10 V | 700mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 6-SMD (5 Leads), Flat Lead | 150°C | 30 V | - | UFV | MOSFET (Metal Oxide) | U-MOSIII | Schottky Diode (Isolated) | 1.9A (Ta) | 1V @ 1mA | 1.8V, 4V | 133mOhm @ 1A, 4V | 1.9 nC @ 4 V | ±12V | 123 pF @ 15 V | 500mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | 175°C | 40 V | - | 8-TSON Advance-WF (3.1x3.1) | MOSFET (Metal Oxide) | U-MOSIII | - | 20A (Ta) | 2.5V @ 200µA | 4.5V, 10V | 7.1mOhm @ 10A, 10V | 21 nC @ 10 V | ±20V | 1290 pF @ 10 V | 840mW (Ta), 65W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 6-SMD, Flat Leads | 150°C (TJ) | 20 V | - | UF6 | MOSFET (Metal Oxide) | U-MOSIII | - | 4.2A (Ta) | 1V @ 1mA | 1.5V, 4V | 28mOhm @ 3A, 4V | 16.8 nC @ 4 V | ±10V | 1050 pF @ 10 V | 500mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SC-101, SOT-883 | 150°C (TJ) | 20 V | - | CST3 | MOSFET (Metal Oxide) | U-MOSIII | - | 200mA (Ta) | 1V @ 1mA | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | - | ±10V | 12 pF @ 10 V | 100mW (Ta) | - | ||
 | 联系我们 | 768 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SC-101, SOT-883 | 150°C | 30 V | - | CST3C | MOSFET (Metal Oxide) | U-MOSIII | - | 100mA (Ta) | 1.5V @ 100µA | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | - | ±20V | 13.5 pF @ 3 V | 500mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-SMD, Flat Lead | 150°C (TJ) | 20 V | - | VS-8 (2.9x1.5) | MOSFET (Metal Oxide) | U-MOSIII | Schottky Diode (Isolated) | 3A (Ta) | 1.2V @ 200µA | 2V, 4.5V | 49mOhm @ 1.5A, 4.5V | 7.5 nC @ 5 V | ±12V | 590 pF @ 10 V | 330mW (Ta) | - | ||
.JPG "TPCF8B01(TE85L,F,M") | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | P-Channel | 8-SMD, Flat Lead | 150°C (TJ) | 20 V | - | VS-8 (2.9x1.5) | MOSFET (Metal Oxide) | U-MOSIII | Schottky Diode (Isolated) | 2.7A (Ta) | 1.2V @ 200µA | 1.8V, 4.5V | 110mOhm @ 1.4A, 4.5V | 6 nC @ 5 V | ±8V | 470 pF @ 10 V | 330mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SC-70, SOT-323 | 150°C | 30 V | - | USM | MOSFET (Metal Oxide) | U-MOSIII | - | 100mA (Ta) | 1.5V @ 100µA | 2.5V, 4V | 3.2Ohm @ 10mA, 4V | - | ±20V | 15.1 pF @ 3 V | 150mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 6-SMD (5 Leads), Flat Lead | 150°C | 20 V | - | UFV | MOSFET (Metal Oxide) | U-MOSIII | Schottky Diode (Isolated) | 1.5A (Ta) | 1.1V @ 100µA | 2.5V, 4V | 160mOhm @ 750mA, 4V | - | ±12V | 125 pF @ 10 V | 500mW (Ta) | - | ||
 | 联系我们 | 10,800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SOT-723 | 150°C (TJ) | 20 V | - | VESM | MOSFET (Metal Oxide) | U-MOSIII | - | 250mA (Ta) | 1V @ 100µA | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 0.34 nC @ 4.5 V | ±10V | 36 pF @ 10 V | 500mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SC-75, SOT-416 | 150°C (TJ) | 20 V | - | SSM | MOSFET (Metal Oxide) | U-MOSIII | - | 250mA (Ta) | 1V @ 100µA | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 0.34 nC @ 4.5 V | ±10V | 36 pF @ 10 V | 500mW (Ta) | - | ||
| 联系我们 | 21,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SOT-723 | 150°C (TJ) | 30 V | - | VESM | MOSFET (Metal Oxide) | U-MOSIII | - | 100mA (Ta) | 1.5V @ 100µA | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | - | ±20V | 13.5 pF @ 3 V | 150mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SC-101, SOT-883 | 150°C (TJ) | 30 V | - | CST3 | MOSFET (Metal Oxide) | U-MOSIII | - | 100mA (Ta) | 1.5V @ 100µA | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | - | ±20V | 13.5 pF @ 3 V | 100mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SOT-723 | 150°C (TJ) | 20 V | - | VESM | MOSFET (Metal Oxide) | U-MOSIII | - | 250mA (Ta) | 1V @ 1mA | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | - | ±10V | 12 pF @ 10 V | 150mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SC-75, SOT-416 | 150°C (TJ) | 30 V | - | SSM | MOSFET (Metal Oxide) | U-MOSIII | - | 100mA (Ta) | 1.5V @ 100µA | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | - | ±20V | 13.5 pF @ 3 V | 100mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | P-Channel | SC-75, SOT-416 | 150°C (TJ) | 20 V | - | SSM | MOSFET (Metal Oxide) | U-MOSIII | - | 330mA (Ta) | 1V @ 1mA | 1.5V, 4.5V | 1.31Ohm @ 100mA, 4.5V | 1.2 nC @ 4 V | ±8V | 43 pF @ 10 V | 150mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SC-75, SOT-416 | 150°C (TJ) | 20 V | - | SSM | MOSFET (Metal Oxide) | U-MOSIII | - | 500mA (Ta) | 1V @ 1mA | 1.5V, 5V | 630mOhm @ 200mA, 5V | 1.23 nC @ 4 V | ±10V | 46 pF @ 10 V | 150mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | SC-75, SOT-416 | 150°C (TA) | 20 V | - | SSM | MOSFET (Metal Oxide) | U-MOSIII | - | 200mA (Ta) | 1V @ 1mA | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | - | ±10V | 12 pF @ 10 V | 100mW (Ta) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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