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TrenchFET® Gen V 系列, 单 FET，MOSFET
结果:
22
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Operating Temperature
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
结果：22
搜索条目:
TrenchFET® Gen V
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Grade | Technology | Series | FET Feature | Vgs(th) (Max) @ Id | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 100 V | 27A (Ta), 110A (Tc) | 7.5V, 10V | 4.1mOhm @ 20A, 10V | 51 nC @ 10 V | ±20V | 2850 pF @ 50 V | 6.25W (Ta), 104W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 2.2V @ 250µA | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH | 30 V | 24.7A (Ta), 67.4A (Tc) | 4.5V, 10V | 3.25mOhm @ 10A, 10V | 25 nC @ 10 V | +16V, -12V | 1150 pF @ 15 V | 3.57W (Ta), 26.5W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 80 V | 33.6A (Ta), 137.5A (Tc) | 7.5V, 10V | 2.9mOhm @ 20A, 10V | 60 nC @ 10 V | ±20V | 3020 pF @ 40 V | 6.25W (Ta), 104W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 2.2V @ 250µA | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 30 V | 51.1A (Ta), 185.6A (Tc) | 4.5V, 10V | 1.06mOhm @ 20A, 10V | 72 nC @ 10 V | +16V, -12V | 3450 pF @ 15 V | 5W (Ta), 65.7W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 2.2V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 30 V | 85.9A (Ta), 350.8A (Tc) | 4.5V, 10V | 0.47mOhm @ 20A, 10V | 180 nC @ 10 V | +16V, -12V | 8960 pF @ 15 V | 6.25W (Ta), 104.1W (Tc) | - | ||
| 联系我们 | 500 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 80 V | 28.9A (Ta), 116A (Tc) | 7.5V, 10V | 3.4mOhm @ 15A, 10V | 67 nC @ 10 V | ±20V | 3360 pF @ 40 V | 5.6W (Ta), 92.5W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 80 V | 20.7A (Ta), 78.4A (Tc) | 7.5V, 10V | 5.8mOhm @ 10A, 10V | 38 nC @ 10 V | ±20V | 1905 pF @ 40 V | 5W (Ta), 71.4W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 150 V | 14.8A (Ta), 59.7A (Tc) | 7.5V, 10V | 10.8mOhm @ 10A, 10V | 54 nC @ 10 V | ±20V | 2733 pF @ 75 V | 5.7W (Ta), 92.5W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 150 V | 17.2A (Ta), 70.2A (Tc) | 7.5V, 10V | 8.8mOhm @ 20A, 10V | 45 nC @ 10 V | ±20V | 2540 pF @ 75 V | 6.25W (Ta), 104W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 150 V | 19A (Ta), 77.4A (Tc) | 7.5V, 10V | 7.9mOhm @ 20A, 10V | 71 nC @ 10 V | ±20V | 3740 pF @ 75 V | 6.25W (Ta), 104W (Tc) | - | ||
 | 联系我们 | 3,352 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 80 V | 35.8A (Ta), 146A (Tc) | 7.5V, 10V | 2.7mOhm @ 20A, 10V | 76 nC @ 10 V | ±20V | 4100 pF @ 40 V | 6.25W (Ta), 104W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 80 V | 17.2A (Ta), 59.5A (Tc) | 7.5V, 10V | 8mOhm @ 10A, 10V | 28.5 nC @ 10 V | ±20V | 1380 pF @ 40 V | 5W (Ta), 59.5W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 80 V | 16.9A (Ta), 58.1A (Tc) | 7.5V, 10V | 8mOhm @ 10A, 10V | 28.5 nC @ 10 V | ±20V | 1380 pF @ 40 V | 4.8W (Ta), 56.8W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8DC | 100 V | 33A (Ta), 148A (Tc) | 7.5V, 10V | 3.6mOhm @ 20A, 10V | 81 nC @ 10 V | ±20V | 4980 pF @ 50 V | 7.5W (Ta), 150W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8DC | 150 V | 17.4A (Ta), 78A (Tc) | 7.5V, 10V | 8.8mOhm @ 20A, 10V | 49 nC @ 10 V | ±20V | 2540 pF @ 75 V | 7.5W (Ta), 150W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8DC | 150 V | 30.8A (Ta), 90.9A (Tc) | 7.5V, 10V | 7.9mOhm @ 20A, 10V | 71 nC @ 10 V | ±20V | 3740 pF @ 75 V | 7.5W (Ta), 150W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8DC | 100 V | 28.2A (Ta), 126A (Tc) | 7.5V, 10V | 4.1mOhm @ 20A, 10V | 51 nC @ 10 V | ±20V | 2850 pF @ 50 V | 7.5W (Ta), 150W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8DC | 80 V | 34.2A (Ta), 153A (Tc) | 7.5V, 10V | 2.9mOhm @ 20A, 10V | 60 nC @ 10 V | ±20V | 3020 pF @ 40 V | 7.5W (Ta), 150W (Tc) | - | ||
| 联系我们 | 1,381 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 80 V | 24.7A (Ta), 100A (Tc) | 7.5V, 10V | 3.9mOhm @ 15A, 10V | 56 nC @ 10 V | ±20V | 2800 pF @ 40 V | 5W (Ta), 83.3W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | MOSFET (Metal Oxide) | TrenchFET® Gen V | - | 2.2V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8DC | 30 V | 94A (Ta), 421A (Tc) | 4.5V, 10V | 0.47mOhm @ 20A, 10V | 180 nC @ 10 V | +16V, -12V | 8960 pF @ 15 V | 7.5W (Ta), 150W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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