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TrenchFET® Gen IV 系列, 单 FET，MOSFET
结果:
248
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
结果：248
搜索条目:
TrenchFET® Gen IV
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Drain to Source Voltage (Vdss) | Grade | Technology | Series | FET Feature | Vgs(th) (Max) @ Id | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 联系我们 | 1,980 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 60 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 3.6V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 23A (Ta), 79.4A (Tc) | 6V, 10V | 4.5mOhm @ 15A, 10V | 37 nC @ 10 V | ±20V | 1710 pF @ 30 V | 5W (Ta), 57W (Tc) | - | ||
 | 联系我们 | 1,937 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 100 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 93.6A (Tc) | 7.5V, 10V | 4.8mOhm @ 20A, 10V | 81 nC @ 10 V | ±20V | 3750 pF @ 50 V | 104W (Tc) | - | ||
| 联系我们 | 1,769 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 80 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 3.5V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 30.7A (Ta), 125A (Tc) | 7.5V, 10V | 2.88mOhm @ 20A, 10V | 83 nC @ 10 V | ±20V | 4415 pF @ 40 V | 6.25W (Ta), 104W (Tc) | - | ||
 | 联系我们 | 29,525 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | P-Channel | 30 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.5V @ 250µA | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | 12.9A (Ta), 30.3A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 27.8 nC @ 10 V | +16V, -20V | 1170 pF @ 15 V | 3.5W (Ta), 19.2W (Tc) | - | ||
 | 联系我们 | 39 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.2V @ 250µA | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 50.5A (Ta), 80A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 93 nC @ 10 V | +16V, -12V | 4460 pF @ 15 V | 5W (Ta), 65.7W (Tc) | - | ||
| 联系我们 | 983 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 60 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 3.6V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 25.5A (Ta), 92.4A (Tc) | 7.5V, 10V | 3.85mOhm @ 10A, 10V | 44 nC @ 10 V | ±20V | 1920 pF @ 30 V | 5W (Ta), 65.7W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 60 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.5V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 25.8A (Ta), 93.6A (Tc) | 4.5V, 10V | 3.75mOhm @ 15A, 10V | 52 nC @ 10 V | ±20V | 2300 pF @ 30 V | 5W (Ta), 65.7W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 100 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 3.6V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 12.4A (Ta), 45A (Tc) | 7.5V, 10V | 13.5mOhm @ 10A, 10V | 41.5 nC @ 10 V | ±20V | 2060 pF @ 50 V | 5W (Ta), 65.7W (Tc) | - | ||
.jpg "SIDR638DP-T1-GE3") | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 40 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.3V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8DC | 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 204 nC @ 10 V | +20V, -16V | 10500 pF @ 20 V | 125W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 100 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 30A (Ta), 127A (Tc) | 7.5V, 10V | 3.5mOhm @ 20A, 10V | 130 nC @ 10 V | ±20V | 5950 pF @ 50 V | 7.4W (Ta),132W (Tc) | - | ||
| 联系我们 | 3,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 25 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.1V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 71.9A (Ta), 100A (Tc) | 4.5V, 10V | 0.67mOhm @ 20A, 10V | 170 nC @ 10 V | +20V, -16V | 8150 pF @ 10 V | 6.25W (Ta), 104W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.2V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8DC | 82A (Ta), 100A (Tc) | 4.5V, 10V | 0.62mOhm @ 20A, 10V | 188 nC @ 10 V | +20V, -16V | 9530 pF @ 15 V | 6.25W (Ta), 125W (Tc) | - | ||
 | 联系我们 | 5,989 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | 40 V | Automotive | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 3.5V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 330A (Tc) | 10V | 1.8mOhm @ 15A, 10V | 81 nC @ 10 V | ±20V | 4715 pF @ 25 V | 312W (Tc) | AEC-Q101 | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 25 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.1V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 82A (Ta), 335A (Tc) | - | 0.58mOhm @ 20A, 10V | 186 nC @ 10 V | +16V, -12V | 9950 pF @ 15 V | 6.3W (Ta), 104W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 20 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 1.5V @ 250µA | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 58.3A (Ta), 210A (Tc) | 2.5V, 10V | 0.92mOhm @ 10A, 10V | 122 nC @ 10 V | +12V, -8V | 6450 pF @ 10 V | 5W (Ta), 65W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.2V @ 250µA | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH | 22A (Ta), 25A (Tc) | 4.5V, 10V | 4.3mOhm @ 10A, 10V | 45 nC @ 10 V | +20V, -16V | 2070 pF @ 15 V | 3.5W (Ta), 28W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | Schottky Diode (Body) | 2.4V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | 36 nC @ 10 V | +20V, -16V | 1873 pF @ 15 V | 43W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | 40 V | Automotive | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 3.5V @ 250µA | PowerPAK® SO-8 | PowerPAK® SO-8 | 130A (Tc) | 10V | 4.6mOhm @ 15A, 10V | 36 nC @ 10 V | ±20V | 1960 pF @ 25 V | 148W (Tc) | AEC-Q101 | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 25 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 2.2V @ 250µA | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 53.9A (Ta), 195.5A (Tc) | 4.5V, 10V | 1.23mOhm @ 15A, 10V | 82 nC @ 10 V | +20V, -16V | 3670 pF @ 12.5 V | 5W (Ta), 65.7W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 80 V | - | MOSFET (Metal Oxide) | TrenchFET® Gen IV | - | 3.5V @ 250µA | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 15.9A (Ta), 54.7A (Tc) | 7.5V, 10V | 8.9mOhm @ 10A, 10V | 30 nC @ 10 V | ±20V | 1295 pF @ 40 V | 4.8W (Ta), 57W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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