TrenchFET® Gen III Series, 单 FET,MOSFET

结果:
29
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Vgs (Max)
FET Type
Operating Temperature
FET Feature
Grade
Mounting Type
Qualification
Technology
结果29
搜索条目:
TrenchFET® Gen III
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
SIA469DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
1+
¥1.6560
5+
¥1.5640
10+
¥1.4720
数量
75,170 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
12A (Tc)
3V @ 250µA
4.5V, 10V
26.5mOhm @ 5A, 10V
15 nC @ 4.5 V
±20V
1020 pF @ 15 V
15.6W (Tc)
PowerPAK® SC-70-6 Single
PowerPAK® SC-70-6
-
SISS65DN-T1-GE3
MOSFET P-CH 30V 25.9A/94A PPAK
1+
¥5.4000
5+
¥5.1000
10+
¥4.8000
数量
62,606 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
25.9A (Ta), 94A (Tc)
2.3V @ 250µA
4.5V, 10V
4.6mOhm @ 15A, 10V
138 nC @ 10 V
±20V
4930 pF @ 15 V
5.1W (Ta), 65.8W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SI4401FDY-T1-GE3
MOSFET P-CH 40V 9.9A/14A 8SO
1+
¥3.6000
5+
¥3.4000
10+
¥3.2000
数量
59,650 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
40 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
9.9A (Ta), 14A (Tc)
2.3V @ 250µA
4.5V, 10V
14.2mOhm @ 10A, 10V
100 nC @ 10 V
±20V
4000 pF @ 20 V
2.5W (Ta), 5W (Tc)
8-SO
8-SOIC (0.154", 3.90mm Width)
-
SISH615ADN-T1-GE3
MOSFET P-CH 20V 22.1A/35A PPAK
1+
¥3.4200
5+
¥3.2300
10+
¥3.0400
数量
45,833 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
22.1A (Ta), 35A (Tc)
1.5V @ 250µA
2.5V, 10V
4.4mOhm @ 20A, 10V
183 nC @ 10 V
±12V
5590 pF @ 10 V
3.7W (Ta), 52W (Tc)
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
-
SISA35DN-T1-GE3
MOSFET P-CH 30V 10A/16A PPAK
1+
¥2.5200
5+
¥2.3800
10+
¥2.2400
数量
43,980 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
10A (Ta), 16A (Tc)
2.2V @ 250µA
4.5V, 10V
19mOhm @ 9A, 10V
42 nC @ 10 V
±20V
1500 pF @ 15 V
3.2W (Ta), 24W (Tc)
PowerPAK® 1212-8
PowerPAK® 1212-8
-
SI4435FDY-T1-GE3
MOSFET P-CH 30V 12.6A 8SOIC
1+
¥1.8900
5+
¥1.7850
10+
¥1.6800
数量
37,030 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
12.6A (Tc)
2.2V @ 250µA
4.5V, 10V
19mOhm @ 9A, 10V
42 nC @ 10 V
±20V
1500 pF @ 15 V
4.8W (Tc)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
-
SI2319DDS-T1-GE3
MOSFET P-CH 40V 2.7A/3.6A SOT23
1+
¥2.1600
5+
¥2.0400
10+
¥1.9200
数量
32,825 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
40 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
2.7A (Ta), 3.6A (Tc)
2.5V @ 250µA
4.5V, 10V
75mOhm @ 2.7A, 10V
19 nC @ 10 V
±20V
650 pF @ 20 V
1W (Ta), 1.7W (Tc)
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
-
SISS63DN-T1-GE3
MOSFET P-CH 20V 35.1/127.5A PPAK
1+
¥4.5000
5+
¥4.2500
10+
¥4.0000
数量
23,455 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
35.1A (Ta), 127.5A (Tc)
1.5V @ 250µA
2.5V, 10V
2.7mOhm @ 15A, 10V
236 nC @ 8 V
±12V
7080 pF @ 10 V
5W (Ta), 65.8W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SI7155DP-T1-GE3
MOSFET P-CH 40V 31A/100A PPAK
1+
¥9.3600
5+
¥8.8400
10+
¥8.3200
数量
19,320 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
40 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
31A (Ta), 100A (Tc)
2.3V @ 250µA
4.5V, 10V
3.6mOhm @ 20A, 10V
330 nC @ 10 V
±20V
12900 pF @ 20 V
6.25W (Ta), 104W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SISS27ADN-T1-GE3
MOSFET P-CH 30V 50A PPAK1212-8S
1+
¥3.9600
5+
¥3.7400
10+
¥3.5200
数量
17,600 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
50A (Tc)
2.2V @ 250µA
4.5V, 10V
5.1mOhm @ 15A, 10V
55 nC @ 4.5 V
±20V
4660 pF @ 15 V
57W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SI4403DDY-T1-GE3
MOSFET P-CH 20V 15.4A 8SOIC
1+
¥21.6000
5+
¥20.4000
10+
¥19.2000
数量
12,008 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
15.4A (Tc)
1V @ 250µA
1.8V, 4.5V
14mOhm @ 9A, 4.5V
99 nC @ 8 V
±8V
3250 pF @ 10 V
5W (Tc)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
-
SI3473DDV-T1-GE3
MOSFET P-CHANNEL 12V 8A 6TSOP
1+
¥90.0000
5+
¥85.0000
10+
¥80.0000
数量
10,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
12 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
8A (Tc)
1V @ 250µA
1.8V, 4.5V
17.8mOhm @ 8.7A, 4.5V
57 nC @ 8 V
±8V
1975 pF @ 6 V
3.6W (Tc)
6-TSOP
SOT-23-6 Thin, TSOT-23-6
-
SI7111EDN-T1-GE3
MOSFET P-CH 30V 60A PPAK1212-8
1+
¥36.0000
5+
¥34.0000
10+
¥32.0000
数量
5,287 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
60A (Tc)
1.6V @ 250µA
2.5V, 4.5V
8.55mOhm @ 15A, 4.5V
46 nC @ 2.5 V
±12V
5860 pF @ 15 V
52W (Tc)
PowerPAK® 1212-8
PowerPAK® 1212-8
-
SISS61DN-T1-GE3
MOSFET P-CH 20V 30.9/111.9A PPAK
1+
¥32.4000
5+
¥30.6000
10+
¥28.8000
数量
4,675 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
30.9A (Ta), 111.9A (Tc)
900mV @ 250µA
1.8V, 4.5V
3.5mOhm @ 15A, 4.5V
231 nC @ 10 V
±8V
8740 pF @ 10 V
5W (Ta), 65.8W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SIR167DP-T1-GE3
MOSFET P-CH 30V 60A PPAK SO-8
1+
¥108.0000
5+
¥102.0000
10+
¥96.0000
数量
3,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
60A (Tc)
2.5V @ 250µA
4.5V, 10V
5.5mOhm @ 15A, 10V
111 nC @ 10 V
±25V
4380 pF @ 15 V
65.8W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SI4103DY-T1-GE3
MOSFET P-CH 30V 14A/16A 8SO
1+
¥5.4000
5+
¥5.1000
10+
¥4.8000
数量
2,440 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
14A (Ta), 16A (Tc)
2V @ 250µA
4.5V, 10V
7.9mOhm @ 10A, 10V
140 nC @ 10 V
±20V
5200 pF @ 15 V
2.5W (Ta), 5.2W (Tc)
8-SO
8-SOIC (0.154", 3.90mm Width)
-
SISS67DN-T1-GE3
MOSFET P-CH 30V 60A PPAK1212-8S
1+
¥10.0800
5+
¥9.5200
10+
¥8.9600
数量
1,520 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
60A (Tc)
2.5V @ 250µA
4.5V, 10V
5.5mOhm @ 15A, 10V
111 nC @ 10 V
±25V
4380 pF @ 15 V
65.8W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SIR165DP-T1-GE3
MOSFET P-CH 30V 60A PPAK SO-8
1+
¥90.0000
5+
¥85.0000
10+
¥80.0000
数量
706 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
60A (Tc)
2.3V @ 250µA
4.5V, 10V
4.6mOhm @ 15A, 10V
138 nC @ 10 V
±20V
4930 pF @ 15 V
69.4W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SIA477EDJT-T1-GE3
MOSFET P-CH 12V 12A PPAK SC70-6
1+
¥36.0000
5+
¥34.0000
10+
¥32.0000
数量
334 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
12 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
12A (Tc)
1V @ 250µA
1.8V, 4.5V
13mOhm @ 5A, 4.5V
50 nC @ 4.5 V
±8V
3050 pF @ 6 V
19W (Tc)
PowerPAK® SC-70-6 Single
PowerPAK® SC-70-6
-
SI4153DY-T1-GE3
P-CHANNEL 30-V (D-S) MOSFET SO-8
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
14.3A (Ta), 19.3A (Tc)
2.5V @ 250µA
4.5V, 10V
9.5mOhm @ 10A, 10V
93 nC @ 10 V
±25V
3600 pF @ 15 V
3.1W (Ta), 5.6W (Tc)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。