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Trench Series, 单 FET，MOSFET
结果:
163
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Mounting Type
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
结果：163
搜索条目:
Trench
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Package / Case | Operating Temperature | Grade | Technology | Series | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Qualification |
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 | 1+ ¥14.4000 5+ ¥13.6000 10+ ¥12.8000 更多的价格 | 50,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-7, D²Pak (6 Leads + Tab) | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 180A (Tc) | 4.5V @ 250µA | 100 V | 10V | 6.4mOhm @ 25A, 10V | 151 nC @ 10 V | ±30V | 6900 pF @ 25 V | 480W (Tc) | TO-263-7 (IXTA) | - | ||
 | 1+ ¥19.8000 5+ ¥18.7000 10+ ¥17.6000 更多的价格 | 8,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 50A (Tc) | 5V @ 1mA | 250 V | 10V | 50mOhm @ 25A, 10V | 78 nC @ 10 V | ±30V | 4000 pF @ 25 V | 400W (Tc) | TO-220-3 | - | ||
 | 1+ ¥126.0000 5+ ¥119.0000 10+ ¥112.0000 更多的价格 | 6,180 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-3P-3, SC-65-3 | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 76A (Tc) | 5V @ 1mA | 250 V | 10V | 39mOhm @ 500mA, 10V | 92 nC @ 10 V | ±30V | 4500 pF @ 25 V | 460W (Tc) | TO-3P | - | ||
| 1+ ¥23.4000 5+ ¥22.1000 10+ ¥20.8000 更多的价格 | 5,500 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 160A (Tc) | 4.5V @ 250µA | 100 V | 10V | 7mOhm @ 25A, 10V | 132 nC @ 10 V | ±30V | 6600 pF @ 25 V | 430W (Tc) | TO-220-3 | - | ||
| 1+ ¥18.0000 5+ ¥17.0000 10+ ¥16.0000 更多的价格 | 3,903 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 130A (Tc) | 4.5V @ 250µA | 100 V | 10V | 9.1mOhm @ 25A, 10V | 104 nC @ 10 V | ±30V | 5080 pF @ 25 V | 360W (Tc) | TO-220-3 | - | ||
.jpg "IXTH160N10T") | 1+ ¥108.0000 5+ ¥102.0000 10+ ¥96.0000 更多的价格 | 46 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-247-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 160A (Tc) | 4.5V @ 250µA | 100 V | 10V | 7mOhm @ 25A, 10V | 132 nC @ 10 V | ±30V | 6600 pF @ 25 V | 430W (Tc) | TO-247 (IXTH) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 42A (Tc) | 4.5V @ 250µA | 150 V | 10V | 45mOhm @ 21A, 10V | 21 nC @ 10 V | ±30V | 1880 pF @ 25 V | 200W (Tc) | TO-263 (D2Pak) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 48A (Tc) | 4.5V @ 250µA | 200 V | 10V | 50mOhm @ 24A, 10V | 60 nC @ 10 V | ±30V | 3090 pF @ 25 V | 250W (Tc) | TO-263AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 230A (Tc) | 4V @ 250µA | 40 V | 10V | 2.9mOhm @ 115A, 10V | 140 nC @ 10 V | ±15V | 7400 pF @ 25 V | 340W (Tc) | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 42A (Tc) | 4.5V @ 250µA | 150 V | 10V | 45mOhm @ 500mA, 10V | 21 nC @ 10 V | ±30V | 1880 pF @ 25 V | 200W (Tc) | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 80A (Tc) | 5V @ 100µA | 100 V | 10V | 14mOhm @ 25A, 10V | 60 nC @ 10 V | ±20V | 3040 pF @ 25 V | 230W (Tc) | TO-220-3 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 48A (Tc) | 4.5V @ 250µA | 200 V | 10V | 50mOhm @ 24A, 10V | 60 nC @ 10 V | ±30V | 3000 pF @ 25 V | 250W (Tc) | TO-220-3 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 64A (Tc) | 4V @ 25µA | 55 V | 10V | 13mOhm @ 32A, 10V | 37 nC @ 10 V | ±20V | 1420 pF @ 25 V | 130W (Tc) | TO-252AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 44A (Tc) | 4.5V @ 25µA | 100 V | 10V | 30mOhm @ 22A, 10V | 33 nC @ 10 V | ±30V | 1262 pF @ 25 V | 130W (Tc) | TO-252AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 102A (Tc) | 5V @ 1mA | 150 V | 10V | 18mOhm @ 500mA, 10V | 87 nC @ 10 V | ±20V | 5220 pF @ 25 V | 455W (Tc) | TO-263AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-3P-3, SC-65-3 | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 50A (Tc) | 5V @ 1mA | 250 V | 10V | 60mOhm @ 25A, 10V | 78 nC @ 10 V | ±30V | 4000 pF @ 25 V | 400W (Tc) | TO-3P | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 180A (Tc) | 4.5V @ 250µA | 100 V | 10V | 6.4mOhm @ 25A, 10V | 151 nC @ 10 V | ±20V | 6900 pF @ 25 V | 480W (Tc) | TO-263 (D2Pak) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 76A (Tc) | 5V @ 1mA | 250 V | 10V | 39mOhm @ 500mA, 10V | 92 nC @ 10 V | ±30V | 4500 pF @ 25 V | 460W (Tc) | TO-263AA | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 86A (Tc) | 5V @ 1mA | 200 V | 10V | 29mOhm @ 500mA, 10V | 90 nC @ 10 V | ±30V | 4500 pF @ 25 V | 480W (Tc) | TO-220-3 | - | ||
_tmb.jpg "IXTH50N25T") | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-247-3 | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | Trench | - | 50A (Tc) | 5V @ 1mA | 250 V | 10V | 60mOhm @ 25A, 10V | 78 nC @ 10 V | ±30V | 4000 pF @ 25 V | 400W (Tc) | TO-247 (IXTH) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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