SuperMESH™ 系列, 单 FET,MOSFET

结果:
222
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Vgs(th) (Max) @ Id
Operating Temperature
Mounting Type
FET Type
Grade
Qualification
Vgs (Max)
FET Feature
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果222
搜索条目:
SuperMESH™
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STB10NK60ZT4
MOSFET N-CH 600V 10A D2PAK
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1,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
SuperMESH™
-
10A (Tc)
4.5V @ 250µA
600 V
10V
750mOhm @ 4.5A, 10V
70 nC @ 10 V
±30V
1370 pF @ 25 V
115W (Tc)
-
STQ2NK60ZR-AP
MOSFET N-CH 600V 400MA TO92-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
-
MOSFET (Metal Oxide)
SuperMESH™
-
400mA (Tc)
4.5V @ 50µA
600 V
10V
8Ohm @ 700mA, 10V
10 nC @ 10 V
±30V
170 pF @ 25 V
3W (Tc)
-
STD3PK50Z
MOSFET P-CH 500V 2.8A DPAK
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3,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-
MOSFET (Metal Oxide)
SuperMESH™
-
2.8A (Tc)
4.5V @ 100µA
500 V
10V
4Ohm @ 1.4A, 10V
20 nC @ 10 V
±30V
620 pF @ 25 V
70W (Tc)
-
STP9NK80Z
MOSFET N-CH 800V 7.5A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
SuperMESH™
-
7.5A (Tc)
4.5V @ 100µA
800 V
10V
1.2Ohm @ 3.75A, 10V
84 nC @ 10 V
±30V
1900 pF @ 25 V
150W (Tc)
-
STP7NK40Z
MOSFET N-CH 400V 5.4A TO220AB
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910 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
SuperMESH™
-
5.4A (Tc)
4.5V @ 50µA
400 V
10V
1Ohm @ 2.7A, 10V
26 nC @ 10 V
±30V
535 pF @ 25 V
70W (Tc)
-
STP13NK50Z
MOSFET N-CH 500V 11A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
SuperMESH™
-
11A (Tc)
4.5V @ 100µA
500 V
10V
480mOhm @ 6.5A, 10V
47 nC @ 10 V
±30V
1600 pF @ 25 V
140W (Tc)
-
STP3NK100Z
MOSFET N-CH 1000V 2.5A TO220AB
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1,392 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
SuperMESH™
-
2.5A (Tc)
4.5V @ 50µA
1000 V
10V
6Ohm @ 1.25A, 10V
18 nC @ 10 V
±30V
601 pF @ 25 V
90W (Tc)
-
STW24NK55Z
MOSFET N-CH 550V 23A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
SuperMESH™
-
23A (Tc)
4.5V @ 100µA
550 V
10V
220mOhm @ 11.5A, 10V
130 nC @ 10 V
±30V
4397.5 pF @ 25 V
285W (Tc)
-
STD2HNK60Z-1
MOSFET N-CH 600V 2A IPAK
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11,841 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
TO-251 (IPAK)
-
MOSFET (Metal Oxide)
SuperMESH™
-
2A (Tc)
4.5V @ 50µA
600 V
10V
4.8Ohm @ 1A, 10V
15 nC @ 10 V
±30V
280 pF @ 25 V
45W (Tc)
-
STP5NK50Z
MOSFET N-CH 500V 4.4A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
SuperMESH™
-
4.4A (Tc)
4.5V @ 50µA
500 V
10V
1.5Ohm @ 2.2A, 10V
28 nC @ 10 V
±30V
535 pF @ 25 V
70W (Tc)
-
STD5NK40Z-1
MOSFET N-CH 400V 3A IPAK
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356,330 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
TO-251 (IPAK)
-
MOSFET (Metal Oxide)
SuperMESH™
-
3A (Tc)
4.5V @ 50µA
400 V
10V
1.8Ohm @ 1.5A, 10V
17 nC @ 10 V
±30V
305 pF @ 25 V
45W (Tc)
-
STP7NK80ZFP
MOSFET N-CH 800V 5.2A TO220FP
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64,543 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
SuperMESH™
-
5.2A (Tc)
4.5V @ 100µA
800 V
10V
1.8Ohm @ 2.6A, 10V
56 nC @ 10 V
±30V
1138 pF @ 25 V
30W (Tc)
-
STB4NK60ZT4
MOSFET N-CH 600V 4A D2PAK
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14,900 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
SuperMESH™
-
4A (Tc)
4.5V @ 50µA
600 V
10V
2Ohm @ 2A, 10V
26 nC @ 10 V
±30V
510 pF @ 25 V
70W (Tc)
-
STD2NC45-1
MOSFET N-CH 450V 1.5A IPAK
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
TO-251 (IPAK)
-
MOSFET (Metal Oxide)
SuperMESH™
-
1.5A (Tc)
3.7V @ 250µA
450 V
10V
4.5Ohm @ 500mA, 10V
7 nC @ 10 V
±30V
160 pF @ 25 V
30W (Tc)
-
STD1NK60-1
MOSFET N-CH 600V 1A IPAK
联系我们
5,260 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
-
MOSFET (Metal Oxide)
SuperMESH™
-
1A (Tc)
3.7V @ 250µA
600 V
10V
8.5Ohm @ 500mA, 10V
10 nC @ 10 V
±30V
156 pF @ 25 V
30W (Tc)
-
STP4NK60ZFP
MOSFET N-CH 600V 4A TO220FP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
SuperMESH™
-
4A (Tc)
4.5V @ 50µA
600 V
10V
2Ohm @ 2A, 10V
26 nC @ 10 V
±30V
510 pF @ 25 V
25W (Tc)
-
STP8NK80ZFP
MOSFET N-CH 800V 6.2A TO220FP
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31,400 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
SuperMESH™
-
6.2A (Tc)
4.5V @ 100µA
800 V
10V
1.5Ohm @ 3.1A, 10V
46 nC @ 10 V
±30V
1320 pF @ 25 V
30W (Tc)
-
STP6NK90ZFP
MOSFET N-CH 900V 5.8A TO220FP
联系我们
31,737 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
SuperMESH™
-
5.8A (Tc)
4.5V @ 100µA
900 V
10V
2Ohm @ 2.9A, 10V
60.5 nC @ 10 V
±30V
1350 pF @ 25 V
30W (Tc)
-
STP5NK52ZD
MOSFET N-CH 520V 4.4A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
SuperMESH™
-
4.4A (Tc)
4.5V @ 50µA
520 V
10V
1.5Ohm @ 2.2A, 10V
16.9 nC @ 10 V
±30V
529 pF @ 25 V
25W (Tc)
-
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
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35,229 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
SuperMESH™
-
2.5A (Tc)
4.5V @ 50µA
800 V
10V
4.5Ohm @ 1.25A, 10V
19 nC @ 10 V
±30V
485 pF @ 25 V
25W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。