SuperMESH3™ 系列, 单 FET,MOSFET

结果:
98
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs(th) (Max) @ Id
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果98
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SuperMESH3™
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图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypeSupplier Device PackagePackage / CaseGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STF11N52K3
MOSFET N-CH 525V 10A TO220FP
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220FP
TO-220-3 Full Pack
-
MOSFET (Metal Oxide)
SuperMESH3™
-
10A (Tc)
4.5V @ 50µA
525 V
10V
510mOhm @ 5A, 10V
51 nC @ 10 V
±30V
1400 pF @ 50 V
30W (Tc)
-
STB6N62K3
MOSFET N-CH 620V 5.5A D2PAK
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
TO-263 (D2Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
SuperMESH3™
-
5.5A (Tc)
4.5V @ 50µA
620 V
10V
1.2Ohm @ 2.8A, 10V
34 nC @ 10 V
±30V
875 pF @ 50 V
90W (Tc)
-
STU6N65K3
MOSFET N-CH 650V 5.4A IPAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
SuperMESH3™
-
5.4A (Tc)
4.5V @ 50µA
650 V
10V
1.3Ohm @ 2.7A, 10V
33 nC @ 10 V
±30V
880 pF @ 50 V
110W (Tc)
-
STP6N120K3
MOSFET N-CH 1200V 6A TO220
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1,459 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220
TO-220-3
-
MOSFET (Metal Oxide)
SuperMESH3™
-
6A (Tc)
5V @ 100µA
1200 V
10V
2.4Ohm @ 2.5A, 10V
34 nC @ 10 V
±30V
1050 pF @ 100 V
150W (Tc)
-
STU5N52K3
MOSFET N-CH 525V 4.4A IPAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
SuperMESH3™
-
4.4A (Tc)
4.5V @ 50µA
525 V
10V
1.5Ohm @ 2.2A, 10V
17 nC @ 10 V
±30V
545 pF @ 100 V
70W (Tc)
-
STFW6N120K3
MOSFET N-CH 1200V 6A ISOWATT
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3PF
TO-3P-3 Full Pack
-
MOSFET (Metal Oxide)
SuperMESH3™
-
6A (Tc)
5V @ 100µA
1200 V
10V
2.4Ohm @ 2.5A, 10V
34 nC @ 10 V
±30V
1050 pF @ 100 V
63W (Tc)
-
STW6N120K3
MOSFET N-CH 1200V 6A TO247
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1,250 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
SuperMESH3™
-
6A (Tc)
5V @ 100µA
1200 V
10V
2.4Ohm @ 2.5A, 10V
34 nC @ 10 V
±30V
1050 pF @ 100 V
150W (Tc)
-
STI6N62K3
MOSFET N-CH 620V 5.5A I2PAK
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2,980 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
I2PAK
TO-262-3 Long Leads, I²Pak, TO-262AA
-
MOSFET (Metal Oxide)
SuperMESH3™
-
5.5A (Tc)
4.5V @ 50µA
620 V
10V
1.2Ohm @ 2.8A, 10V
34 nC @ 10 V
±30V
875 pF @ 50 V
90W (Tc)
-
STU2N62K3
MOSFET N-CH 620V 2.2A IPAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
SuperMESH3™
-
2.2A (Tc)
4.5V @ 50µA
620 V
10V
3.6Ohm @ 1.1A, 10V
15 nC @ 10 V
±30V
340 pF @ 50 V
45W (Tc)
-
STP6N52K3
MOSFET N-CH 525V 5A TO220
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220
TO-220-3
-
MOSFET (Metal Oxide)
SuperMESH3™
-
5A (Tc)
4.5V @ 50µA
525 V
10V
1.2Ohm @ 2.5A, 10V
26 nC @ 10 V
±30V
670 pF @ 50 V
70W (Tc)
-
STU3LN62K3
MOSFET N-CH 620V 2.5A IPAK
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
SuperMESH3™
-
2.5A (Tc)
4.5V @ 50µA
620 V
10V
3Ohm @ 1.25A, 10V
17 nC @ 10 V
±30V
386 pF @ 50 V
45W (Tc)
-
STU2LN60K3
MOSFET N CH 600V 2A IPAK
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数量
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PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
SuperMESH3™
-
2A (Tc)
4.5V @ 50µA
600 V
10V
4.5Ohm @ 1A, 10V
12 nC @ 10 V
±30V
235 pF @ 50 V
45W (Tc)
-
STP7N95K3
MOSFET N-CH 950V 7.2A TO220-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220
TO-220-3
-
MOSFET (Metal Oxide)
SuperMESH3™
-
7.2A (Tc)
5V @ 100µA
950 V
10V
1.35Ohm @ 3.6A, 10V
34 nC @ 10 V
±30V
1031 pF @ 100 V
150W (Tc)
-
STN3N40K3
MOSFET N-CH 400V 1.8A SOT223
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1,746 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-223
TO-261-4, TO-261AA
-
MOSFET (Metal Oxide)
SuperMESH3™
-
1.8A (Tc)
4.5V @ 50µA
400 V
10V
3.4Ohm @ 600mA, 10V
11 nC @ 10 V
±30V
165 pF @ 50 V
3.3W (Ta)
-
STF6N62K3
MOSFET N-CH 620V 5.5A TO220FP
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18,090 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220FP
TO-220-3 Full Pack
-
MOSFET (Metal Oxide)
SuperMESH3™
-
5.5A (Tc)
4.5V @ 50µA
620 V
10V
1.28Ohm @ 2.8A, 10V
34 nC @ 10 V
±30V
875 pF @ 50 V
30W (Tc)
-
STF5NK100Z
MOSFET N-CH 1000V 3.5A TO220FP
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14,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220FP
TO-220-3 Full Pack
-
MOSFET (Metal Oxide)
SuperMESH3™
-
3.5A (Tc)
4.5V @ 100µA
1000 V
10V
3.7Ohm @ 1.75A, 10V
59 nC @ 10 V
±30V
1154 pF @ 25 V
30W (Tc)
-
STP13N95K3
MOSFET N-CH 950V 10A TO220
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220
TO-220-3
-
MOSFET (Metal Oxide)
SuperMESH3™
-
10A (Tc)
5V @ 100µA
950 V
10V
850mOhm @ 5A, 10V
51 nC @ 10 V
±30V
1620 pF @ 100 V
190W (Tc)
-
STP17N62K3
MOSFET N-CH 620V 15.5A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220
TO-220-3
-
MOSFET (Metal Oxide)
SuperMESH3™
-
15.5A (Tc)
4.5V @ 100µA
620 V
10V
380mOhm @ 7.5A, 10V
94 nC @ 10 V
±30V
2500 pF @ 50 V
190W (Tc)
-
STF17N62K3
MOSFET N-CH 620V 15.5A TO220FP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220FP
TO-220-3 Full Pack
-
MOSFET (Metal Oxide)
SuperMESH3™
-
15.5A (Tc)
4.5V @ 100µA
620 V
10V
340mOhm @ 7.5A, 10V
105 nC @ 10 V
±30V
3100 pF @ 50 V
40W (Tc)
-
STFI13N95K3
MOSFET N CH 950V 10A I2PAKFP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-281 (I2PAKFP)
TO-262-3 Full Pack, I²Pak
-
MOSFET (Metal Oxide)
SuperMESH3™
-
10A (Tc)
5V @ 100µA
950 V
10V
850mOhm @ 5A, 10V
51 nC @ 10 V
±30V
1620 pF @ 100 V
40W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。