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StrongIRFET™ 系列, 单 FET，MOSFET
结果:
50
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
结果：50
搜索条目:
StrongIRFET™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature | Grade | Technology | Series | FET Feature | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Package / Case | Qualification |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 114A (Tc) | 6V, 10V | 3.6mOhm @ 70A, 10V | 3.7V @ 150µA | 180 nC @ 10 V | ±20V | 6510 pF @ 25 V | 115W (Tc) | DirectFET™ Isometric ME | DirectFET™ Isometric ME | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 40 V | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 135A (Tc) | 6V, 10V | 2.3mOhm @ 81A, 10V | 3.9V @ 100µA | 81 nC @ 10 V | ±20V | 3913 pF @ 25 V | 74W (Tc) | DirectFET™ Isometric MF | DirectFET™ Isometric MF | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 100 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 209A (Tc) | 6V, 10V | 1.28mOhm @ 100A, 10V | 3.8V @ 278µA | 555 nC @ 10 V | ±20V | 25000 pF @ 50 V | 556W (Tc) | TO-247AC | TO-247-3 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 75 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 59A (Tc) | 6V, 10V | 10.6mOhm @ 35A, 10V | 3.7V @ 100µA | 83 nC @ 10 V | ±20V | 3049 pF @ 25 V | 99W (Tc) | TO-220AB | TO-220-3 | - | ||
_tmb.jpg "IRL40T209ATMA1") | 联系我们 | 6,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 40 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 300A (Tc) | 4.5V, 10V | 0.72mOhm @ 100A, 10V | 2.4V @ 250µA | 269 nC @ 4.5 V | ±20V | 16000 pF @ 20 V | 500W (Tc) | PG-HSOF-8-1 | 8-PowerSFN | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 75 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 240A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 428 nC @ 10 V | ±20V | 13970 pF @ 25 V | 375W (Tc) | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 100 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 203A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 278µA | 270 nC @ 10 V | ±20V | 12020 pF @ 50 V | 341W (Tc) | TO-247AC | TO-247-3 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 150 V | -55°C ~ 175°C | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 203A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4.6V @ 265µA | 200 nC @ 10 V | ±20V | 12000 pF @ 75 V | 556W (Tc) | PG-TO247-3 | TO-247-3 | - | ||
| 联系我们 | 250 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 150 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 186A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 6000 pF @ 75 V | 341W (Tc) | PG-TO247-3 | TO-247-3 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4360 pF @ 25 V | 140W (Tc) | TO-252AA (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | ||
| 联系我们 | 30 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 56A (Tc) | 6V, 10V | 7.9mOhm @ 43A, 10V | 3.7V @ 100µA | 87 nC @ 10 V | ±20V | 3020 pF @ 25 V | 99W (Tc) | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 40 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 150µA | 137 nC @ 4.5 V | ±20V | 8320 pF @ 25 V | 231W (Tc) | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 75 V | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 89A (Tc) | 6V, 10V | 5.7mOhm @ 53A, 10V | 3.7V @ 150µA | 186 nC @ 10 V | ±20V | 6504 pF @ 25 V | 96W (Tc) | DirectFET™ Isometric ME | DirectFET™ Isometric ME | - | ||
 | 联系我们 | 9,242 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 75 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 240A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 428 nC @ 10 V | ±20V | 13970 pF @ 25 V | 375W (Tc) | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) | - | ||
 | 联系我们 | 53,506 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 135 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 129A (Tc) | 10V | 8.4mOhm @ 77A, 10V | 4V @ 250µA | 270 nC @ 10 V | ±20V | 9700 pF @ 50 V | 441W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
 | 联系我们 | 3,200 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 250 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 96A (Tc) | 10V | 12mOhm @ 58A, 10V | 4V @ 270µA | 203 nC @ 10 V | ±20V | 9915 pF @ 50 V | 313W (Tc) | TO-247AC | TO-247-3 | - | ||
 | 联系我们 | 8,594 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 75 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 87A (Tc) | 6V, 10V | 7.3mOhm @ 52A, 10V | 3.7V @ 100µA | 122 nC @ 10 V | ±20V | 4650 pF @ 25 V | 143W (Tc) | TO-220AB | TO-220-3 | - | ||
 | 联系我们 | 2,073 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 60 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4360 pF @ 25 V | 140W (Tc) | TO-252AA (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | ||
| 联系我们 | 1,690 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 300 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 100A (Tc) | 10V | 19mOhm @ 45A, 10V | 4V @ 270µA | 191 nC @ 10 V | ±20V | 10030 pF @ 50 V | 556W (Tc) | TO-247AC | TO-247-3 | - | ||
| 联系我们 | 7,200 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | 200 V | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | StrongIRFET™ | - | 182A (Tc) | 10V | 6.6mOhm @ 82A, 10V | 4V @ 270µA | 203 nC @ 10 V | ±20V | 9820 pF @ 50 V | 556W (Tc) | TO-247AC | TO-247-3 | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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